Switch-mode Power Rectifier

Switch-mode Power Rectifier Features and Benefits • Low Forward Voltage • Low Power Loss / High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • These Devices are Pb−Free and are RoHS Compliant Applications • Power Supply − Output

SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 45 VOLTS

SWITCHMODE™ Power Rectifier Features and Benefits • Low Forward Voltage • Low Power Loss / High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Pb−Free Package is Available* Applications • Power Supply − Output Rectification • P

肖特基势垒整流器，45 V，20 A

This Schottky Rectifier uses the Schottky Barrier principle with a platinum barrier metal. • Low Forward Voltage\n• Low Power Loss/High Efficiency\n• High Surge Capacity\n• 175°C Operating Junction Temperature\n• 20 A Total (10 A Per Diode Leg)\n• Pb-Free Package is Available Mechanical Characteristics:\n• Case: Epoxy, Molded\n• Epoxy Meets UL94, V-O @ 0.125 in\n• Weight: 1.9 Grams (Appro;

封装/外壳：TO-220-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 45V TO220FP 分立半导体产品 二极管 - 整流器 - 阵列

SWITCHMODE Power Rectifier

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SWITCHMODE??Schottky Power Rectifirer

SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

SWITCHMODE?? Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara