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MBRF10H价格
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型号：MBRF10H100CT-E3/45 品牌：Vishay 备注：这里有MBRF10H多少钱，2024年最近7天走势，今日出价，今日竞价，MBRF10H批发/采购报价，MBRF10H行情走势销售排行榜，MBRF10H报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MBRF10H | Schottky Barrier Rectifiers HighVoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Powerpack •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequenc | VishayVishay Siliconix 威世科技 |  |   |
High Voltage Schottky Rectifiers HighVoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Powerpack •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequenc | VishayVishay Siliconix 威世科技 | | | |
High-Voltage Schottky Rectifier HighVoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Powerpack •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequenc | VishayVishay Siliconix 威世科技 | | | |
Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 SchottkyBarrierRectifiers Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassifications94V-0 •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervoltageprotection •Foruseinlowvoltage,highfr | KERSEMI Kersemi Electronic Co., Ltd. |  | | |
High Voltage Schottky Rectifier FEATURES •Powerpack •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof 245°C(forTO-263ABpackage) | VishayVishay Siliconix 威世科技 | | | |
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 SchottkyBarrierRectifiers Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervo | KERSEMI Kersemi Electronic Co., Ltd. | | | |
Dual High-Voltage Schottky Rectifiers DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •H | VishayVishay Siliconix 威世科技 | | | |
Isolated 10.0 AMPS. Schottky Barrier Rectifiers 10.0AMPSIsolatedSchottkyBarrierRectifiers Features Lowpowerloss,highefficiency Highcurrentcapability,lowforwardvoltagedrop Guard-ringforovervoltageprotection Hightemperaturesolderingguaranteed:260℃/10seconds/.25,(6.35mm)fromcase Foruseinlowvoltage, | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 |  | | |
Dual Common-Cathode High-Voltage Schottky Rectifier DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •H | VishayVishay Siliconix 威世科技 | | | |
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 SchottkyBarrierRectifiers Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervo | KERSEMI Kersemi Electronic Co., Ltd. | | | |
Dual Common Cathode High Voltage Schottky Rectifier FEATURES •Powerpack •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof 245°C(forTO-263ABpackage) | VishayVishay Siliconix 威世科技 | | | |
SCHOTTKY BARRIER RECTIFIERS Features Highefficienctyoperation Lowpowerloss Highforwardsurgecapability LeadfreeincompliancewithEURoHS 2011/65/EUdirective GreenmoldingcompoundasperIEC61249 Std..(HalogenFree) Lowstoredchargemajoritycarrierconduction | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 |  | | |
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 SchottkyBarrierRectifiers Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervo | KERSEMI Kersemi Electronic Co., Ltd. | | | |
Isolated 10.0AMP.Schottky Barrier Rectifiers Isolated10.0AMP.SchottkyBarrierRectifiers Features PlasticmaterialusedcarriesUnderwritersLaboratoryClassifications94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highcurrentcapability,lowforwardvoltagedrop Highsurgecapa | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | | |
Dual Common-Cathode High-Voltage Schottky Rectifier DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •H | VishayVishay Siliconix 威世科技 | | | |
Dual Common-Cathode High-Voltage Schottky Rectifier DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •H | VishayVishay Siliconix 威世科技 | | | |
High-Voltage Schottky Rectifier HighVoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Powerpack •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequenc | VishayVishay Siliconix 威世科技 | | | |
High-Voltage Schottky Rectifier HighVoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Powerpack •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequenc | VishayVishay Siliconix 威世科技 | | | |
Isolated 10.0 AMPS. Schottky Barrier Rectifiers 10.0AMPSIsolatedSchottkyBarrierRectifiers Features Lowpowerloss,highefficiency Highcurrentcapability,lowforwardvoltagedrop Guard-ringforovervoltageprotection Hightemperaturesolderingguaranteed:260℃/10seconds/.25,(6.35mm)fromcase Foruseinlowvoltage, | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Isolated 10.0AMP.Schottky Barrier Rectifiers Isolated10.0AMP.SchottkyBarrierRectifiers Features PlasticmaterialusedcarriesUnderwritersLaboratoryClassifications94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highcurrentcapability,lowforwardvoltagedrop Highsurgecapa | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | | | |
SCHOTTKY BARRIER RECTIFIERS Features Highefficienctyoperation Lowpowerloss Highforwardsurgecapability LeadfreeincompliancewithEURoHS 2011/65/EUdirective GreenmoldingcompoundasperIEC61249 Std..(HalogenFree) Lowstoredchargemajoritycarrierconduction | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | | | |
Isolated 10.0 AMPS. Schottky Barrier Rectifiers 10.0AMPSIsolatedSchottkyBarrierRectifiers Features Lowpowerloss,highefficiency Highcurrentcapability,lowforwardvoltagedrop Guard-ringforovervoltageprotection Hightemperaturesolderingguaranteed:260℃/10seconds/.25,(6.35mm)fromcase Foruseinlowvoltage, | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Isolated 10.0AMP.Schottky Barrier Rectifiers Isolated10.0AMP.SchottkyBarrierRectifiers Features PlasticmaterialusedcarriesUnderwritersLaboratoryClassifications94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highcurrentcapability,lowforwardvoltagedrop Highsurgecapa | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | | | |
SCHOTTKY BARRIER RECTIFIERS Features Highefficienctyoperation Lowpowerloss Highforwardsurgecapability LeadfreeincompliancewithEURoHS 2011/65/EUdirective GreenmoldingcompoundasperIEC61249 Std..(HalogenFree) Lowstoredchargemajoritycarrierconduction | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | | | |
Schottky Barrier Rectifiers HighVoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Powerpack •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequenc | VishayVishay Siliconix 威世科技 | | | |
Schottky Barrier Rectifier SchottkyBarrierRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequ | VishayVishay Siliconix 威世科技 | | | |
Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 SchottkyBarrierRectifiers Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Lowforwardvoltagedrop,lowpowerlossandhighefficiency •Guardringforovervoltageprotection •Fo | KERSEMI Kersemi Electronic Co., Ltd. | | | |
SCHOTTKY BARRIER RECTIFIERS Features Highefficienctyoperation Lowpowerloss Highforwardsurgecapability LeadfreeincompliancewithEURoHS 2011/65/EUdirective GreenmoldingcompoundasperIEC61249 Std..(HalogenFree) Lowstoredchargemajoritycarrierconduction | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | | | |
Schottky Barrier Rectifier SchottkyBarrierRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequ | VishayVishay Siliconix 威世科技 | | | |
SCHOTTKY BARRIER RECTIFIERS Features Highefficienctyoperation Lowpowerloss Highforwardsurgecapability LeadfreeincompliancewithEURoHS 2011/65/EUdirective GreenmoldingcompoundasperIEC61249 Std..(HalogenFree) Lowstoredchargemajoritycarrierconduction | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | | | |
Schottky Barrier Rectifier SchottkyBarrierRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequ | VishayVishay Siliconix 威世科技 | | | |
Schottky Barrier Rectifier SchottkyBarrierRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequ | VishayVishay Siliconix 威世科技 | | | |
Schottky Barrier Rectifier SchottkyBarrierRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequ | VishayVishay Siliconix 威世科技 | | | |
Schottky Barrier Rectifiers HighVoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Powerpack •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequenc | VishayVishay Siliconix 威世科技 | | | |
Schottky Barrier Rectifier SchottkyBarrierRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequ | VishayVishay Siliconix 威世科技 | | | |
Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 SchottkyBarrierRectifiers Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Lowforwardvoltagedrop,lowpowerlossandhighefficiency •Guardringforovervoltageprotection •Fo | KERSEMI Kersemi Electronic Co., Ltd. | | | |
SCHOTTKY BARRIER RECTIFIERS Features Highefficienctyoperation Lowpowerloss Highforwardsurgecapability LeadfreeincompliancewithEURoHS 2011/65/EUdirective GreenmoldingcompoundasperIEC61249 Std..(HalogenFree) Lowstoredchargemajoritycarrierconduction | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | | | |
High Voltage Schottky Rectifiers HighVoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Powerpack •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequenc | VishayVishay Siliconix 威世科技 | | | |
High-Voltage Schottky Rectifier HighVoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Powerpack •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequenc | VishayVishay Siliconix 威世科技 | | | |
MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Features •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervoltageprotection •Foruseinlowvol | VAISHVaishali Semiconductor Vaishali Semiconductor |  | | |
Dual High-Voltage Schottky Rectifiers DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •H | VishayVishay Siliconix 威世科技 | | | |
Dual Common-Cathode High-Voltage Schottky Rectifier DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •H | VishayVishay Siliconix 威世科技 | | | |
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 SchottkyBarrierRectifiers Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervo | KERSEMI Kersemi Electronic Co., Ltd. | | | |
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 SchottkyBarrierRectifiers Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervo | KERSEMI Kersemi Electronic Co., Ltd. | | | |
封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE ARRAY SCHOTT 100V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation |  | | |
10.0AMPS Isolated Schottky Barrier Rectifiers 文件：247.47 Kbytes Page：3 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Dual Common Cathode Schottky Rectifier 文件：224.33 Kbytes Page：4 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
10.0AMPS Isolated Schottky Barrier Rectifiers 文件：187.76 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
10.0AMPS Isolated Schottky Barrier Rectifiers 文件：187.76 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
10.0AMPS Isolated Schottky Barrier Rectifiers 文件：247.47 Kbytes Page：3 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Dual Common Cathode Schottky Rectifier 文件：224.33 Kbytes Page：4 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Dual Common Cathode Schottky Rectifier 文件：224.33 Kbytes Page：4 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Dual Common Cathode Schottky Rectifier 文件：224.33 Kbytes Page：4 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
封装/外壳：TO-220-2 全封装，隔离接片 包装：管件 描述：DIODE ARRAY SCHOTTKY 100V ITO220 分立半导体产品 二极管 - 整流器 - 阵列 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | | | |
Dual Common Cathode Schottky Rectifier 文件：224.33 Kbytes Page：4 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：129 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | | |
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：126.1 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | | |
10.0AMPS Isolated Schottky Barrier Rectifiers 文件：187.76 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Dual High-Voltage Schottky Rectifiers 文件：47.91 Kbytes Page：3 Pages | VishayVishay Siliconix 威世科技 | | | |
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 文件：1.14604 Mbytes Page：3 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | |
MBRF10H产品属性
- 类型
描述
- 型号
MBRF10H
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Schottky Barrier Rectifiers
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
2021++ |
TO-220F |
5850 |
全新原装现货 |
|||
ON/安森美 |
21+ |
TO-220 |
250 |
原装假一罚十!特价支持实单!一片起卖! |
|||
ON(安森美) |
22+ |
NA |
8000 |
原厂原装现货 |
|||
VISHAY |
22+ |
TO-220 |
2000 |
长源创新-只做原装---假一赔十 |
|||
ON |
2023+ |
TO-220FP |
3577 |
全新原厂原装产品、公司现货销售 |
|||
VISHAY |
2021+ |
ITO220 |
6030 |
百分百原装正品 |
|||
ON |
23+ |
TO-220F |
68 |
正规渠道,只有原装! |
|||
VISHAY |
2020+ |
TO-220F |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON/安森美 |
22+ |
TO-220F |
88152 |
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- P80
