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MBRF10H价格
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型号：MBRF10H100CT-E3/45 品牌：Vishay 备注：这里有MBRF10H多少钱，2025年最近7天走势，今日出价，今日竞价，MBRF10H批发/采购报价，MBRF10H行情走势销售排行榜，MBRF10H报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBRF10H | Schottky Barrier Rectifiers High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 |   | |
High Voltage Schottky Rectifiers High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high fr | KERSEMI | | ||
High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VishayVishay Siliconix 威世威世科技公司 | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo | KERSEMI | | ||
Dual High-Voltage Schottky Rectifiers Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世威世科技公司 | | ||
Isolated 10.0 AMPS. Schottky Barrier Rectifiers 10.0AMPS Isolated Schottky Barrier Rectifiers Features Low power loss, high efficiency High current capability, low forward voltage drop Guard-ring for overvoltage protection High temperature soldering guaranteed: 260℃/10 seconds/.25, (6.35mm) from case For use in low voltage, | TSC 台湾半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世威世科技公司 | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo | KERSEMI | | ||
Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VishayVishay Siliconix 威世威世科技公司 | | ||
SCHOTTKY BARRIER RECTIFIERS Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo | KERSEMI | | ||
Isolated 10.0AMP.Schottky Barrier Rectifiers Isolated 10.0AMP.Schottky BarrierRectifiers Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capa | LUGUANG 鲁光电子 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
Isolated 10.0 AMPS. Schottky Barrier Rectifiers 10.0AMPS Isolated Schottky Barrier Rectifiers Features Low power loss, high efficiency High current capability, low forward voltage drop Guard-ring for overvoltage protection High temperature soldering guaranteed: 260℃/10 seconds/.25, (6.35mm) from case For use in low voltage, | TSC 台湾半导体 | | ||
Isolated 10.0AMP.Schottky Barrier Rectifiers Isolated 10.0AMP.Schottky BarrierRectifiers Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capa | LUGUANG 鲁光电子 | | ||
SCHOTTKY BARRIER RECTIFIERS Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | | ||
Switch-mode Power Rectifier 150 V, 10 A Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capability • 10 A Total (5 A Per Diode Leg) • Guard−Ring for Stress Protection • This is a Pb−Free Device Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mec | ONSEMI 安森美半导体 | | ||
Switch-mode Power Rectifier 150 V, 10 A Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capability • 10 A Total (5 A Per Diode Leg) • Guard−Ring for Stress Protection • This is a Pb−Free Device Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mec | ONSEMI 安森美半导体 | | ||
Isolated 10.0 AMPS. Schottky Barrier Rectifiers 10.0AMPS Isolated Schottky Barrier Rectifiers Features Low power loss, high efficiency High current capability, low forward voltage drop Guard-ring for overvoltage protection High temperature soldering guaranteed: 260℃/10 seconds/.25, (6.35mm) from case For use in low voltage, | TSC 台湾半导体 | | ||
Isolated 10.0AMP.Schottky Barrier Rectifiers Isolated 10.0AMP.Schottky BarrierRectifiers Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capa | LUGUANG 鲁光电子 | | ||
SCHOTTKY BARRIER RECTIFIERS Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | | ||
Schottky Barrier Rectifiers High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ | VishayVishay Siliconix 威世威世科技公司 | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • Fo | KERSEMI | | ||
SCHOTTKY BARRIER RECTIFIERS Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | | ||
Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ | VishayVishay Siliconix 威世威世科技公司 | | ||
SCHOTTKY BARRIER RECTIFIERS Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | | ||
Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifiers High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Barrier Rectifier Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequ | VishayVishay Siliconix 威世威世科技公司 | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • Fo | KERSEMI | | ||
SCHOTTKY BARRIER RECTIFIERS Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | | ||
High Voltage Schottky Rectifiers High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Schottky Rectifier High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc | VishayVishay Siliconix 威世威世科技公司 | | ||
MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low vol | VAISH 威世 | | ||
Dual High-Voltage Schottky Rectifiers Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世威世科技公司 | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo | KERSEMI | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo | KERSEMI | | ||
10.0AMPS Isolated Schottky Barrier Rectifiers 文件：247.47 Kbytes Page：3 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：224.33 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
10.0AMPS Isolated Schottky Barrier Rectifiers 文件：187.76 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE ARRAY SCHOTT 100V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | TSC 台湾半导体 | | ||
Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance | VishayVishay Siliconix 威世威世科技公司 | | ||
10.0AMPS Isolated Schottky Barrier Rectifiers 文件：187.76 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
10.0AMPS Isolated Schottky Barrier Rectifiers 文件：247.47 Kbytes Page：3 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：224.33 Kbytes Page：4 Pages | TSC 台湾半导体 | |
MBRF10H产品属性
- 类型
描述
- 型号
MBRF10H
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Schottky Barrier Rectifiers
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
2000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
40 |
220F |
ONSEMI/安森美 |
8 |
92 |
|||
ONS |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON |
25+ |
TO-220F |
30000 |
代理全新原装现货,价格优势 |
|||
ON/安森美 |
24+ |
TO-220FP |
30000 |
原装正品公司现货,假一赔十! |
|||
GS |
23+ |
TO-220F |
10000 |
专做原装正品,假一罚百! |
|||
ON |
25+23+ |
TO-220 |
39866 |
绝对原装正品全新进口深圳现货 |
|||
ON/安森美 |
21+ |
TO-220FP |
8080 |
只做原装,质量保证 |
|||
VISHAY |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
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