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MBRA1100T3

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

FORMOSA

美丽微半导体

MBRA1100T3

CHIP SCHOTTKY BARRIER DIODES

FEATURES • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

TAYCHIPST

泰迪斯电子

1 Amp Schottky Rectifier

● Uderwirters Laboratory Flammability Class 94V-0 ● Schottky Barrier Rectifier ● Guard Ring Protection ● 175°C Junction Temperature ● Surface mount package

MICROSEMI

美高森美

Schottky Power Rectifier(Surface Mount Power Package)

Schottky Barrier Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suit

MOTOROLA

摩托罗拉

Schottky Power Rectifier Surface Mount Power Package

文件:49.23 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Schottky Power Rectifier Surface Mount Power Package

文件:49.23 Kbytes Page:4 Pages

ONSEMI

安森美半导体

MBRA1100T3产品属性

  • 类型

    描述

  • 型号

    MBRA1100T3

  • 制造商

    FORMOSA

  • 制造商全称

    Formosa MS

  • 功能描述

    Chip Schottky Barrier Diodes - Silicon epitaxial planer type

更新时间:2026-7-31 18:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
有有主力推
23+
TO-220F
13000
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MCC/美微科
25+
SOD123
98192
价格从优 欢迎来电咨询
ON
23+
SOD123
12000
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MCC
SOD-123
15500
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25+
11
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ON/安森美
21+
DO-214AC
30000
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VISHAY/威世
22+
DO-214AC
20000
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VISHAYMAS
25+23+
DO-214AC
53418
绝对原装正品现货,全新深圳原装进口现货
VISHAY/威世
25+
DO-214AC
50000
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ON
17+ROHS
SMA
45
全新 发货1-2天

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