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型号	功能描述	生产厂家&企业	LOGO
MBR860	SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard	BILIN 银河微电	BILIN
MBR860	SCHOTTKY BARRIER RECTIFIERS FEATURES ● Metal of silicon rectifier , majority carrier conduction ● Guard ring for transient protection ● Low power loss,high efficiency ● High current capability,low VF ● High surge capacity ● Plastic package has UL flammability classification 94V-0 ● For use in low voltage,high frequenc	HY	HY
MBR860	SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 8 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd vol	PANJIT 強茂	PANJIT
MBR860	8.0A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity	DIODES 美台半导体	DIODES
MBR860	Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 8.0 A Reverse Voltage 40 to 200 V Forward Current 8.0 A Features • Low Power Loss， High Efficiency • Low Forward Voltage Drop • High Current Capability • Lead and body according with RoHS standard	DACHANG 大昌电子	DACHANG
MBR860	8.0A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity	KERSEMI	KERSEMI
MBR860	Guard Ring Die Construction for Transient Protection Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity	KERSEMI	KERSEMI
MBR860	Guard Ring Die Construction for Transient Protection Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity	KERSEMI	KERSEMI
MBR860	Schottky Barrier Chip Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity	KERSEMI	KERSEMI
MBR860	Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ The pl	LUGUANG 鲁光电子	LUGUANG
MBR860	Product Specification Construction : : Schottky Barrier Rectifier Application : For General Purpose	Good-Ark	Good-Ark
MBR860	SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -8.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High	CHENDA 辰达半导体	CHENDA
MBR860	Dual rectifier construction, positive center tap Construction : : Schottky Barrier Rectifier Application : For General Purpose	Surge	Surge
MBR860	8.0 A SCHOTTKY BARRIER DIODE Features ● Classification Rating 94V-O ● Plastic Case Material has UL Flammability ● Guard Ring Die Construction ● For Use in Low Voltage Application ● Low Power Loss, High Efficiency ● Ideally Suited for Automatic Assembly ● Schottky Barrier Chip	ZSELEC 淄博圣诺电子	ZSELEC
MBR860	Schottky Barrier Rectifier FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss/High Efficiency • High Surge Capability • High Current Capability， Low Forward Voltage Drop • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI	ISC 无锡固电	ISC
MBR860	8.0A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity	KERSEMI	KERSEMI
MBR860	SCHOTTKY BARRIER RECTIFIER Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C,0.25”(6.35mm) from case for 10 seco	SY 顺烨电子	SY
MBR860	SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94	SAMYANG 三阳电子	SAMYANG
MBR860	SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94	SAMYANG 三阳电子	SAMYANG
MBR860	SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94	SAMYANG 三阳电子	SAMYANG
MBR860	Schottky Barrier Recitifiers 文件：443.78 Kbytes Page：3 Pages	HY	HY
MBR860	SCHOTTKY BARRIER RECTIFIERS 文件：141.68 Kbytes Page：3 Pages	HY	HY
MBR860	SCHOTTKY BARRIER RECTIFIER 文件：487.18 Kbytes Page：2 Pages	CHENDA 辰达半导体	CHENDA
MBR860	High Tjm Low IRRM Schottky Barrier Diodes 文件：90.38 Kbytes Page：2 Pages	SIRECTIFIER 矽莱克电子	SIRECTIFIER
MBR860	Schottky Barrier Rectifier 文件：151.45 Kbytes Page：2 Pages	DACHANG 大昌电子	DACHANG
MBR860CT	SCHOTTKY BARRIER RECTIFIERS Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction	SUNMATE 森美特	SUNMATE
MBR860CT	Exceeds environmental standards of MIL-S-19500/228 VOLTAGE 40 to 200 Volts CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd volt	KERSEMI	KERSEMI
MBR860CT	SCHOTTKY BARRIER RECTIFIER VOLTAGE 40 to 200 Volts CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd volt	PANJIT 強茂	PANJIT
MBR860CT	SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -8.0 Amperes FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Construction utilizes void-free ● molded plastic technique ● Low reverse leakage ● High forward surge	CHENDA 辰达半导体	CHENDA
MBR860CT	SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94	SAMYANG 三阳电子	SAMYANG
MBR860CT	SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94	SAMYANG 三阳电子	SAMYANG
MBR860CT	SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94	SAMYANG 三阳电子	SAMYANG
MBR860CT	SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94	SAMYANG 三阳电子	SAMYANG
MBR860D	D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER VOLTAGE 40 to 200 Volts CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd volt	PANJIT 強茂	PANJIT
MBR860DC	D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER VOLTAGE 40 to 200 Volt CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • Low forward voltge, high current capability • High surge capacity. •	PANJIT 強茂	PANJIT
MBR860F	SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 8 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd vol	PANJIT 強茂	PANJIT
MBR860FCT	SCHOTTKY BARRIER RECTIFIER VOLTAGE 40 to 200 Volts CURRENT 8 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd vol	PANJIT 強茂	PANJIT
MBR860CD	8.0 A SCHOTTKY BARRIER DIODE 文件：148.11 Kbytes Page：2 Pages	ZSELEC 淄博圣诺电子	ZSELEC
MBR860CD	SCHOTTKY BARRIER RECTIFIERS 文件：1.18984 Mbytes Page：3 Pages	DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司	DYELEC
MBR860CP	SCHOTTKY BARRIER RECTIFIERS 文件：1.23819 Mbytes Page：3 Pages	DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司	DYELEC
MBR860CP	8.0 A SCHOTTKY BARRIER DIODE 文件：139.54 Kbytes Page：2 Pages	ZSELEC 淄博圣诺电子	ZSELEC
MBR860CT	SCHOTTKY BARRIER RECTIFIER 文件：654.54 Kbytes Page：2 Pages	CHENDA 辰达半导体	CHENDA
MBR860D_R2_00001	封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：D PAK SURFACE MOUNT SCHOTTKY BAR 分立半导体产品二极管 - 整流器 - 单	PANJIT 強茂	PANJIT
MBR860DC	8.0A SCHOTTKY BARRIER DIODE 文件：147.05 Kbytes Page：2 Pages	ZSELEC 淄博圣诺电子	ZSELEC
MBR860DC_R2_00001	封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：D PAK SURFACE MOUNT SCHOTTKY BAR 分立半导体产品二极管 - 整流器 - 阵列	PANJIT 強茂	PANJIT
MBR860DS	Surface Mount Schottky Barrier Rectifier 文件：477.98 Kbytes Page：3 Pages	YFWDIODE 佑风微电子	YFWDIODE
MBR860G	8.0 A SCHOTTKY BARRIER DIODE 文件：146.24 Kbytes Page：2 Pages	ZSELEC 淄博圣诺电子	ZSELEC
MBR860MFS	SWITCHMODE Power Rectifiers 文件：67.89 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI
MBR860MFST1G	SWITCHMODE Power Rectifiers 文件：67.89 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI
MBR860MFST3G	SWITCHMODE Power Rectifiers 文件：67.89 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI
MBR860S	SCHOTTKY RECTIFIER 文件：148.98 Kbytes Page：5 Pages	SMCSangdest Microelectronic (Nanjing) Co., Ltd 烧结金属	SMC
MBR860ULPS	Lead Free Finish/RoHS Compliant 文件：353.72 Kbytes Page：2 Pages	MCC 美微科	MCC
,BC860	Low current Features ● Low current (max. 100 mA). ● Low voltage (max. 45 V).	LUGUANG 鲁光电子	LUGUANG
860	PCB CONNECTORS Ultraminiature PCB pin connectors. Solder tail / SMD parallel mount.	PREDIP	PREDIP
860	(46 mm) Ten Turn Wirewound Potentiometer, Bushing Mount FEATURES • Gangable up to 2 sections • Large range of ohmic values: 20  to 200 k • Extra taps available upon request • Ideally suits for all industry applications	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
860	Panel Mount, Shocksafe 5x20mm / 6.3x32mm Fuses 文件：82.72 Kbytes Page：1 Pages	Littelfuse 力特	Littelfuse
860	Precision Potentiometer 文件：158.35 Kbytes Page：4 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay

MBR860产品属性

类型
描述
型号
MBR860
制造商
HY
制造商全称
HY ELECTRONIC CORP.
功能描述
SCHOTTKY BARRIER RECTIFIERS

MBR860供应商更多...

更新时间：2025-8-6 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	MBR860MFST3G	onsemi(安森美)	24+	SO8FL	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市得捷芯城科技有限公司	MBR860MFST1G	ON(安森美)	24+	NA/	8735	原厂直销,现货供应,账期支持!	询价
深圳市纳立科技有限公司	MBR860MFST3G		三年内		1983	只做原装正品	询价
中天科工半导体（深圳）有限公司	MBR860ULPS	MCC	20+	TO-277B	36800	原装优势主营型号-可开原型号增税票	询价
深圳市威雅利发展有限公司	MBR860MFST1G	ON	1808+	QFN	20	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市正纳电子有限公司	MBR860MFST1G	ON(安森美)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市芯为科技有限公司	MBR860MFST3G	ON/安森美	25+	电联咨询	7800	公司现货,提供拆样技术支持	询价
深圳市振宏微科技有限公司	MBR860	DIODES	23+	TO-220	10000	专做原装正品,假一罚百!	询价
深圳市嵩宏达科技有限公司	MBR860DS	JXND/嘉兴南电	24+	SMC	50000	全新原装,一手货源,全场热卖!	询价
贸泽芯城（深圳）电子科技有限公司	MBR860MFS	ON/安森美	23+	QFN	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价

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MBR860产品属性

MBR860供应商更多...

MBR860芯片相关品牌

MBR860规格书下载地址

MBR860参数引脚图相关

MBR860数据表相关新闻

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DdatasheetPDF页码索引