型号 功能描述 生产厂家&企业 LOGO 操作
MBR845

8.0A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

DIODES

美台半导体

MBR845

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency invert

ONSEMI

安森美半导体

MBR845

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection app

SIRECTIFIER

矽莱克电子

MBR845

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volts CURRENT 8 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd vol

PANJIT

強茂

MBR845

Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 8.0 A

Reverse Voltage 40 to 200 V Forward Current 8.0 A Features • Low Power Loss, High Efficiency • Low Forward Voltage Drop • High Current Capability • Lead and body according with RoHS standard

DACHANG

大昌电子

MBR845

8.0 A SCHOTTKY BARRIER DIODE

Features ● Classification Rating 94V-O ● Plastic Case Material has UL Flammability ● Guard Ring Die Construction ● For Use in Low Voltage Application ● Low Power Loss, High Efficiency ● Ideally Suited for Automatic Assembly ● Schottky Barrier Chip

ZSELEC

淄博圣诺电子

MBR845

8.0A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

KERSEMI

MBR845

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ The pl

LUGUANG

鲁光电子

MBR845

8.0A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

KERSEMI

MBR845

Guard Ring Die Construction for Transient Protection

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

KERSEMI

MBR845

8.0A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

KERSEMI

MBR845

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current -8.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High

CHENDA

辰达半导体

MBR845

SCHOTTKY BARRIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C,0.25”(6.35mm) from case for 10 seco

SY

顺烨电子

MBR845

SCHOTTKY BARRIER RECTIFIER

文件:487.18 Kbytes Page:2 Pages

CHENDA

辰达半导体

MBR845

Schottky Barrier Rectifier

文件:151.45 Kbytes Page:2 Pages

DACHANG

大昌电子

MBR845

High Tjm Low IRRM Schottky Barrier Diodes

文件:112.18 Kbytes Page:2 Pages

SIRECTIFIER

矽莱克电子

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current -8.0 Amperes FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Construction utilizes void-free ● molded plastic technique ● Low reverse leakage ● High forward surge

CHENDA

辰达半导体

SCHOTTKY BARRIER RECTIFIERS

Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction

SUNMATE

森美特

SCHOTTKY BARRIER RECTIFIER

VOLTAGE 40 to 200 Volts CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd volt

PANJIT

強茂

D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER

VOLTAGE 40 to 200 Volts CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd volt

PANJIT

強茂

D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER

VOLTAGE 40 to 200 Volt CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • Low forward voltge, high current capability • High surge capacity. •

PANJIT

強茂

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volts CURRENT 8 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd vol

PANJIT

強茂

SCHOTTKY BARRIER RECTIFIER

VOLTAGE 40 to 200 Volts CURRENT 8 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd vol

PANJIT

強茂

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency invert

ONSEMI

安森美半导体

SCHOTTKY BARRIER RECTIFIERS

文件:1.18984 Mbytes Page:3 Pages

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

8.0 A SCHOTTKY BARRIER DIODE

文件:148.11 Kbytes Page:2 Pages

ZSELEC

淄博圣诺电子

SCHOTTKY BARRIER RECTIFIERS

文件:1.23819 Mbytes Page:3 Pages

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

8.0 A SCHOTTKY BARRIER DIODE

文件:139.54 Kbytes Page:2 Pages

ZSELEC

淄博圣诺电子

SCHOTTKY BARRIER RECTIFIER

文件:654.54 Kbytes Page:2 Pages

CHENDA

辰达半导体

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:D PAK SURFACE MOUNT SCHOTTKY BAR 分立半导体产品 二极管 - 整流器 - 单

PANJIT

強茂

8.0A SCHOTTKY BARRIER DIODE

文件:147.05 Kbytes Page:2 Pages

ZSELEC

淄博圣诺电子

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:D PAK SURFACE MOUNT SCHOTTKY BAR 分立半导体产品 二极管 - 整流器 - 阵列

PANJIT

強茂

Surface Mount Schottky Barrier Rectifier

文件:477.98 Kbytes Page:3 Pages

YFWDIODE

佑风微电子

8.0 A SCHOTTKY BARRIER DIODE

文件:146.24 Kbytes Page:2 Pages

ZSELEC

淄博圣诺电子

Shuguang Vacuum Tube 845

DESCRIPTION Direct heating, thorium cathode made by Toshiba, high gain triode 845B can be used in class A and AB power FEATURES ·High purity of titanized graphite plate ·Maximum plate power dissipation can reach 100W

ETCList of Unclassifed Manufacturers

未分类制造商

Shuguang Vacuum Tube 845

DESCRIPTION Direct heating, thorium cathode made by Toshiba, high gain triode 845B can be used in class A and AB power FEATURES ·High purity of titanized graphite plate ·Maximum plate power dissipation can reach 100W

ETCList of Unclassifed Manufacturers

未分类制造商

Surface Mount Zener Diodes

Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package

KEXIN

科信电子

Intel 82845G/82845GL/82845GV Graphics and Memory Controller Hub (GMCH)

This Graphics and Memory Controller Hub (GMCH) datasheet is for the Intel®82845G GMCH,Intel ®82845GL GMCH, and Intel®82845GV GMCH. The 82845G GMCH is part of the Intel®845G chipset, the 82845GL GMCH is part of the Intel®845GL chipset, and the 82845GV GMCH is part of the Intel® 845GV chipset. Ea

Intel

英特尔

82845GE Graphics and Memory Controller Hub (GMCH) and 82845PE Memory Controller Hub (MCH)

Introduction This datasheet is for both the Intel® 82845GE Graphics and Memory Controller Hub (GMCH) and Intel® 82845PE Memory Controller Hub (MCH) components. The 82845GE GMCH is part of the Intel® 845GE chipset and the 82845PE MCH is part of the Intel® 845PE chipset. Each chipset contains two

Intel

英特尔

MBR845产品属性

  • 类型

    描述

  • 型号

    MBR845

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    REC SURM 3A 45V SHTKY - Bulk

  • 制造商

    SPC Multicomp

  • 功能描述

    SCHOTTKY DIODE 8A 45V TO-220A

  • 制造商

    SPC Multicomp

  • 功能描述

    SCHOTTKY DIODE, 8A, 45V, TO-220A

  • 制造商

    SPC Multicomp

  • 功能描述

    SCHOTTKY DIODE, 8A, 45V, TO-220A; Diode

  • Type

    Schottky; Diode

  • Configuration

    Single; Repetitive Reverse Voltage Vrrm

  • Max

    45V; Forward Current

  • If(AV)

    8A; Forward Voltage VF

  • Max

    550mV; Forward Surge Current Ifsm

  • Max

    150A; No. of

  • Pins

    2 ;RoHS

  • Compliant

    Yes

更新时间:2025-8-6 17:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Rochester
25+
电联咨询
7800
公司现货,提供拆样技术支持
ON/安森美
21+
NA
2722
只做原装,假一罚十
DIODES
23+
TO-220
10000
专做原装正品,假一罚百!
ON/安森美
21+
NA
12820
只做原装,质量保证
PANJIT/强茂
23+
TO-TO-220
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
DIODES
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
Diodes
17+
TO-220
6200
ON
20+
38500
全新现货热卖中欢迎查询
24+
3000
公司现货
MDD
21+
TO-220AC
12588
原装正品,价格优势

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