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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MBR845 | 8.0A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | DIODES 美台半导体 | ||
MBR845 | Axial Lead Rectifiers Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency invert | ONSEMI 安森美半导体 | ||
MBR845 | Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection app | SIRECTIFIER 矽莱克电子 | ||
MBR845 | SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 8 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd vol | PANJIT 強茂 | ||
MBR845 | Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 8.0 A Reverse Voltage 40 to 200 V Forward Current 8.0 A Features • Low Power Loss, High Efficiency • Low Forward Voltage Drop • High Current Capability • Lead and body according with RoHS standard | DACHANG 大昌电子 | ||
MBR845 | 8.0 A SCHOTTKY BARRIER DIODE Features ● Classification Rating 94V-O ● Plastic Case Material has UL Flammability ● Guard Ring Die Construction ● For Use in Low Voltage Application ● Low Power Loss, High Efficiency ● Ideally Suited for Automatic Assembly ● Schottky Barrier Chip | ZSELEC 淄博圣诺电子 | ||
MBR845 | 8.0A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | KERSEMI | ||
MBR845 | Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ The pl | LUGUANG 鲁光电子 | ||
MBR845 | 8.0A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | KERSEMI | ||
MBR845 | Guard Ring Die Construction for Transient Protection Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | KERSEMI | ||
MBR845 | 8.0A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | KERSEMI | ||
MBR845 | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -8.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High | CHENDA 辰达半导体 | ||
MBR845 | SCHOTTKY BARRIER RECTIFIER Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C,0.25”(6.35mm) from case for 10 seco | SY 顺烨电子 | ||
MBR845 | SCHOTTKY BARRIER RECTIFIER 文件:487.18 Kbytes Page:2 Pages | CHENDA 辰达半导体 | ||
MBR845 | Schottky Barrier Rectifier 文件:151.45 Kbytes Page:2 Pages | DACHANG 大昌电子 | ||
MBR845 | High Tjm Low IRRM Schottky Barrier Diodes 文件:112.18 Kbytes Page:2 Pages | SIRECTIFIER 矽莱克电子 | ||
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -8.0 Amperes FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Construction utilizes void-free ● molded plastic technique ● Low reverse leakage ● High forward surge | CHENDA 辰达半导体 | |||
SCHOTTKY BARRIER RECTIFIERS Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | |||
SCHOTTKY BARRIER RECTIFIER VOLTAGE 40 to 200 Volts CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd volt | PANJIT 強茂 | |||
D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER VOLTAGE 40 to 200 Volts CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd volt | PANJIT 強茂 | |||
D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER VOLTAGE 40 to 200 Volt CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • Low forward voltge, high current capability • High surge capacity. • | PANJIT 強茂 | |||
SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 8 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd vol | PANJIT 強茂 | |||
SCHOTTKY BARRIER RECTIFIER VOLTAGE 40 to 200 Volts CURRENT 8 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd vol | PANJIT 強茂 | |||
Axial Lead Rectifiers Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency invert | ONSEMI 安森美半导体 | |||
SCHOTTKY BARRIER RECTIFIERS 文件:1.18984 Mbytes Page:3 Pages | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | |||
8.0 A SCHOTTKY BARRIER DIODE 文件:148.11 Kbytes Page:2 Pages | ZSELEC 淄博圣诺电子 | |||
SCHOTTKY BARRIER RECTIFIERS 文件:1.23819 Mbytes Page:3 Pages | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | |||
8.0 A SCHOTTKY BARRIER DIODE 文件:139.54 Kbytes Page:2 Pages | ZSELEC 淄博圣诺电子 | |||
SCHOTTKY BARRIER RECTIFIER 文件:654.54 Kbytes Page:2 Pages | CHENDA 辰达半导体 | |||
封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:D PAK SURFACE MOUNT SCHOTTKY BAR 分立半导体产品 二极管 - 整流器 - 单 | PANJIT 強茂 | |||
8.0A SCHOTTKY BARRIER DIODE 文件:147.05 Kbytes Page:2 Pages | ZSELEC 淄博圣诺电子 | |||
封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:D PAK SURFACE MOUNT SCHOTTKY BAR 分立半导体产品 二极管 - 整流器 - 阵列 | PANJIT 強茂 | |||
Surface Mount Schottky Barrier Rectifier 文件:477.98 Kbytes Page:3 Pages | YFWDIODE 佑风微电子 | |||
8.0 A SCHOTTKY BARRIER DIODE 文件:146.24 Kbytes Page:2 Pages | ZSELEC 淄博圣诺电子 | |||
Shuguang Vacuum Tube 845 DESCRIPTION Direct heating, thorium cathode made by Toshiba, high gain triode 845B can be used in class A and AB power FEATURES ·High purity of titanized graphite plate ·Maximum plate power dissipation can reach 100W | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Shuguang Vacuum Tube 845 DESCRIPTION Direct heating, thorium cathode made by Toshiba, high gain triode 845B can be used in class A and AB power FEATURES ·High purity of titanized graphite plate ·Maximum plate power dissipation can reach 100W | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Surface Mount Zener Diodes Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package | KEXIN 科信电子 | |||
Intel 82845G/82845GL/82845GV Graphics and Memory Controller Hub (GMCH) This Graphics and Memory Controller Hub (GMCH) datasheet is for the Intel®82845G GMCH,Intel ®82845GL GMCH, and Intel®82845GV GMCH. The 82845G GMCH is part of the Intel®845G chipset, the 82845GL GMCH is part of the Intel®845GL chipset, and the 82845GV GMCH is part of the Intel® 845GV chipset. Ea | Intel 英特尔 | |||
82845GE Graphics and Memory Controller Hub (GMCH) and 82845PE Memory Controller Hub (MCH) Introduction This datasheet is for both the Intel® 82845GE Graphics and Memory Controller Hub (GMCH) and Intel® 82845PE Memory Controller Hub (MCH) components. The 82845GE GMCH is part of the Intel® 845GE chipset and the 82845PE MCH is part of the Intel® 845PE chipset. Each chipset contains two | Intel 英特尔 |
MBR845产品属性
- 类型
描述
- 型号
MBR845
- 制造商
Rochester Electronics LLC
- 功能描述
REC SURM 3A 45V SHTKY - Bulk
- 制造商
SPC Multicomp
- 功能描述
SCHOTTKY DIODE 8A 45V TO-220A
- 制造商
SPC Multicomp
- 功能描述
SCHOTTKY DIODE, 8A, 45V, TO-220A
- 制造商
SPC Multicomp
- 功能描述
SCHOTTKY DIODE, 8A, 45V, TO-220A; Diode
- Type
Schottky; Diode
- Configuration
Single; Repetitive Reverse Voltage Vrrm
- Max
45V; Forward Current
- If(AV)
8A; Forward Voltage VF
- Max
550mV; Forward Surge Current Ifsm
- Max
150A; No. of
- Pins
2 ;RoHS
- Compliant
Yes
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Rochester |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
ON/安森美 |
21+ |
NA |
2722 |
只做原装,假一罚十 |
|||
DIODES |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
|||
ON/安森美 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
PANJIT/强茂 |
23+ |
TO-TO-220 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
DIODES |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
Diodes |
17+ |
TO-220 |
6200 |
||||
ON |
20+ |
38500 |
全新现货热卖中欢迎查询 |
||||
24+ |
3000 |
公司现货 |
|||||
MDD |
21+ |
TO-220AC |
12588 |
原装正品,价格优势 |
MBR845规格书下载地址
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