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型号 功能描述 生产厂家&企业 LOGO 操作
MBR845

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

DIODESDiodes Incorporated

达尔科技

DIODES
MBR845

AxialLeadRectifiers

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−voltage,high−frequencyinvert

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MBR845

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

SIRECTIFIER
MBR845

SCHOTTKYBARRIERRECTIFIERS

VOLTAGE40to200VoltsCURRENT8Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowpowerloss,highefficiency. •Lowforwrdvol

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MBR845

SchottkyBarrierRectifierReverseVoltage40to200VForwardCurrent8.0A

ReverseVoltage40to200V ForwardCurrent8.0A Features •LowPowerLoss，HighEfficiency •LowForwardVoltageDrop •HighCurrentCapability •LeadandbodyaccordingwithRoHSstandard

DACHANGRugao Dachang Electronics Co., Ltd

如皋市大昌如皋市大昌电子有限公司

DACHANG
MBR845

8.0ASCHOTTKYBARRIERDIODE

Features ●ClassificationRating94V-O ●PlasticCaseMaterialhasULFlammability ●GuardRingDieConstruction ●ForUseinLowVoltageApplication ●LowPowerLoss,HighEfficiency ●IdeallySuitedforAutomaticAssembly ●SchottkyBarrierChip

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC
MBR845

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
MBR845

SchottkyBarrierRectifiers

VOLTAGERANGE:30-100VCURRENT:8.0A Features ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Thepl

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
MBR845

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
MBR845

GuardRingDieConstructionforTransientProtection

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
MBR845

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
MBR845

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to100VoltsForwardCurrent-8.0Amperes FEATURES ♦TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 ♦Constructionutilizesvoid-freemoldedplastictechnique ♦Lowreverseleakage ♦Highforwardsurgecurrentcapability ♦High

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰达半导体深圳辰达半导体有限公司

CHENDA
MBR845

SCHOTTKYBARRIERRECTIFIER

文件：487.18 Kbytes Page：2 Pages

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰达半导体深圳辰达半导体有限公司

CHENDA
MBR845

SchottkyBarrierRectifier

文件：151.45 Kbytes Page：2 Pages

DACHANGRugao Dachang Electronics Co., Ltd

如皋市大昌如皋市大昌电子有限公司

DACHANG
MBR845

HighTjmLowIRRMSchottkyBarrierDiodes

文件：112.18 Kbytes Page：2 Pages

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

SIRECTIFIER
MBR845CT

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to100Volts ForwardCurrent-8.0Amperes FEATURES ●TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 ●Constructionutilizesvoid-free ●moldedplastictechnique ●Lowreverseleakage ●Highforwardsurge

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰达半导体深圳辰达半导体有限公司

CHENDA
MBR845CT

SCHOTTKYBARRIERRECTIFIERS

Features Highefficienctyoperation Lowpowerloss Highforwardsurgecapability LeadfreeincompliancewithEURoHS 2011/65/EUdirective GreenmoldingcompoundasperIEC61249 Std..(HalogenFree) Lowstoredchargemajoritycarrierconduction

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
MBR845CT

SCHOTTKYBARRIERRECTIFIER

VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowpowerloss,highefficiency. •Lowforwrdvolt

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MBR845D

D2PAKSURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowpowerloss,highefficiency. •Lowforwrdvolt

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MBR845DC

D2PAKSURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

VOLTAGE40to200VoltCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •Lowpowerloss,highefficiency. •Lowforwardvoltge,highcurrentcapability •Highsurgecapacity. •

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MBR845F

SCHOTTKYBARRIERRECTIFIERS

VOLTAGE40to200VoltsCURRENT8Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowpowerloss,highefficiency. •Lowforwrdvol

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MBR845FCT

SCHOTTKYBARRIERRECTIFIER

VOLTAGE40to200VoltsCURRENT8Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowpowerloss,highefficiency. •Lowforwrdvol

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MBR845RL

AxialLeadRectifiers

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−voltage,high−frequencyinvert

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MBR845CD

SCHOTTKYBARRIERRECTIFIERS

文件：1.18984 Mbytes Page：3 Pages

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

DYELEC
MBR845CD

8.0ASCHOTTKYBARRIERDIODE

文件：148.11 Kbytes Page：2 Pages

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC
MBR845CP

SCHOTTKYBARRIERRECTIFIERS

文件：1.23819 Mbytes Page：3 Pages

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

DYELEC
MBR845CP

8.0ASCHOTTKYBARRIERDIODE

文件：139.54 Kbytes Page：2 Pages

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC
MBR845CT

SCHOTTKYBARRIERRECTIFIER

文件：654.54 Kbytes Page：2 Pages

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰达半导体深圳辰达半导体有限公司

CHENDA
MBR845D_R2_00001

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：D PAK SURFACE MOUNT SCHOTTKY BAR 分立半导体产品 二极管 - 整流器 - 单

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MBR845DC

8.0ASCHOTTKYBARRIERDIODE

文件：147.05 Kbytes Page：2 Pages

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC
MBR845DC_R2_00001

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：D PAK SURFACE MOUNT SCHOTTKY BAR 分立半导体产品 二极管 - 整流器 - 阵列

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MBR845DS

SurfaceMountSchottkyBarrierRectifier

文件：477.98 Kbytes Page：3 Pages

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
MBR845G

8.0ASCHOTTKYBARRIERDIODE

文件：146.24 Kbytes Page：2 Pages

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC
845

ShuguangVacuumTube845

DESCRIPTION Directheating,thoriumcathodemadebyToshiba,highgaintriode845BcanbeusedinclassAandABpower FEATURES ·Highpurityoftitanizedgraphiteplate ·Maximumplatepowerdissipationcanreach100W

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
845B

ShuguangVacuumTube845

DESCRIPTION Directheating,thoriumcathodemadebyToshiba,highgaintriode845BcanbeusedinclassAandABpower FEATURES ·Highpurityoftitanizedgraphiteplate ·Maximumplatepowerdissipationcanreach100W

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
845B

SurfaceMountZenerDiodes

Features ●latHandlingSurfaceforAccuratePlacement ●tandardZenerBreakdownVoltageRange-3.3Vto68V ●owProfilePackage

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
845G

Intel82845G/82845GL/82845GVGraphicsandMemoryControllerHub(GMCH)

ThisGraphicsandMemoryControllerHub(GMCH)datasheetisfortheIntel®82845GGMCH,Intel ®82845GLGMCH,andIntel®82845GVGMCH.The82845GGMCHispartoftheIntel®845Gchipset,the82845GLGMCHispartoftheIntel®845GLchipset,andthe82845GVGMCHispartoftheIntel®845GVchipset.Ea

IntelIntel Corporation（Integrated Electronics Corporation)

英特尔英特尔（集成电子公司）

Intel
845GE

82845GEGraphicsandMemoryControllerHub(GMCH)and82845PEMemoryControllerHub(MCH)

Introduction ThisdatasheetisforboththeIntel®82845GEGraphicsandMemoryControllerHub(GMCH)andIntel®82845PEMemoryControllerHub(MCH)components.The82845GEGMCHispartoftheIntel®845GEchipsetandthe82845PEMCHispartoftheIntel®845PEchipset.Eachchipsetcontainstwo

IntelIntel Corporation（Integrated Electronics Corporation)

英特尔英特尔（集成电子公司）

Intel

MBR845产品属性

  • 类型

    描述

  • 型号

    MBR845

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    REC SURM 3A 45V SHTKY - Bulk

  • 制造商

    SPC Multicomp

  • 功能描述

    SCHOTTKY DIODE 8A 45V TO-220A

  • 制造商

    SPC Multicomp

  • 功能描述

    SCHOTTKY DIODE, 8A, 45V, TO-220A

  • 制造商

    SPC Multicomp

  • 功能描述

    SCHOTTKY DIODE, 8A, 45V, TO-220A; Diode

  • Type

    Schottky; Diode

  • Configuration

    Single; Repetitive Reverse Voltage Vrrm

  • Max

    45V; Forward Current

  • If(AV)

    8A; Forward Voltage VF

  • Max

    550mV; Forward Surge Current Ifsm

  • Max

    150A; No. of

  • Pins

    2 ;RoHS

  • Compliant

    Yes

MBR845供应商更多...

更新时间：2024-4-24 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市纳艾斯科技有限公司
MBR845
ON
2020+
DO-201A
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市鑫宇杨电子科技有限公司
MBR845
CJ
2020+
TO-220
985000
100%进口原装正品公司现货库存
询价
深圳市振宏微科技有限公司
MBR845
DIODES
23+
TO-220
10000
专做原装正品,假一罚百!
询价
深圳市华芯源电子有限公司
MBR845
ON/安森美
22+
NA
201000
可订货,请确认
询价
鑫勃源（上海北京 青岛）有限公司
MBR845
ON
23+
TO-23
18000
询价
深圳市得捷芯城科技有限公司
MBR845
DIODES/美台
23+
NA/
2000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市航润创能电子集团有限公司
MBR845
ON/安森美
21+
NA
2722
只做原装,假一罚十
询价
深圳市跃创芯科技有限公司
MBR845
DIODES/美台
22+
TO-220
25000
只做原装进口现货,专注配单
询价
深圳市华博特电子有限公司
MBR845
ONSEMI
23/22+
NA
9000
代理渠道.实单必成
询价
深圳市美思瑞电子科技有限公司
MBR845
ON/安森美
22+
N/A
12245
现货,原厂原装假一罚十!
询价

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MBR845规格书下载地址

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