Schottky Diodes

■ Features ● Low power loss, high efficiency. ● Low forwrd voltage, high current capability ● High surge capacity. ● For use in low voltage,high frequency inverters.

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * Very low equivalent on-resistance; RCE(sat) 125mΩ at 2A * Gain of 400 at IC=1 Amp * Very low saturation voltage APPLICATIONS * Darlington replacement * Siren Drivers, DC-DC converters

40MHz to 1GHz AMPLIFIER

DESCRIPTION The TSH690 is a wide band RF amplifier, designed in advanced bipolar process. At 450 MHz, it features 28dB gain and +13.5dBm (20 mW) output power at 3V. At 900 MHz, it features 23 dB gain and +15.5 dBm (35 mW) output power at 3V. The pin 8 allows a bias current adjust, setting th

40MHz to 1GHz AMPLIFIER

DESCRIPTION The TSH690 is a wide band RF amplifier, designed in advanced bipolar process. At 450 MHz, it features 28dB gain and +13.5dBm (20 mW) output power at 3V. At 900 MHz, it features 23 dB gain and +15.5 dBm (35 mW) output power at 3V. The pin 8 allows a bias current adjust, setting th

SCR

DESCRIPTION The TYN 682 ---> TYN 692 Family Silicon Controlled Rectifiers are high performance glass passivated chips technology. This general purpose Family Silicon Controlled Rectifiers is designed for power supply up to 400Hz on resistive or inductive load. FEATURES ■ HIGH SURGE CAPABILITY

DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS

SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS PARTMARKING DETAIL - T690