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型号 功能描述 生产厂家 企业 LOGO 操作
MBR6080

Schottky Power Diode, 60A

Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity

NAINA

MBR6080

Si Schottky Rectifier Diodes

60Amp,90V-100V Schottky Rectifier in DO5 package.

MICROCHIP

微芯科技

MBR6080

Schottky Rectifiers

NAVITAS

纳微半导体

MBR6080

封装/外壳:DO-203AB,DO-5,接线柱 包装:散装 描述:DIODE SCHOTTKY 80V 60A DO5 分立半导体产品 二极管 - 整流器 - 单

GENESIC

MBR6080

SCHOTTKY DIODES STUD TYPE 60 A

文件:122.18 Kbytes Page:2 Pages

TEL

MBR6080

SCHOTTKY DIODES STUD TYPE 60A

文件:81.79 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MBR6080

Silicon Power Schottky Diode

文件:807.46 Kbytes Page:3 Pages

GENESIC

60 AMPERES SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili

PANJIT

強茂

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili

PANJIT

強茂

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 - 100 V CURRENT: 60 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard r

DSK

60Ampere Heatsink Dual Common Cathode Schottky Barrier Rectifier Diodes

Features  Low forward voltage drop  ThinkiSemi matured planar process schottky  High current capability  High surge current capability  Low reverse leakage current Application  Inverter/UPS  Plating Power Supply/SMPS  Car Audio Amplifier and Sound Device System

THINKISEMI

思祁半导体

Schottky Barrier Rectifiers

Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

LUGUANG

鲁光电子

Schottky Barrier Rectifier

Reverse Voltage: 30 to 100V Forward Current: 60.0A RoHS Device Features - Guard ring for overvoltage protection. - Low power loss, high efficiency. - Low reverse leakage current. - High Surge Current Capability.

COMCHIP

典琦

Schottky Power Diode, 60A

Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity

NAINA

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High cur

PANJIT

強茂

Schottky Barrier Rectifier

文件:223.36 Kbytes Page:2 Pages

ISC

无锡固电

包装:管件 描述:DIODE SCHOTTKY 60A 80V TO-247AD 分立半导体产品 二极管 - 整流器 - 单

MICROCHIP

微芯科技

Si Schottky Rectifier Diodes

MICROCHIP

微芯科技

SCHOTTKY DIODES STUD TYPE 60 A

文件:122.18 Kbytes Page:2 Pages

TEL

Silicon Power Schottky Diode

文件:807.46 Kbytes Page:3 Pages

GENESIC

SCHOTTKY DIODES STUD TYPE 60A

文件:81.79 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UV Power METERS

A Wide Lineup of 248 nm, 365 nm and 436 nm Type The C6080 series is a compact UV power meter specifically designed to measure the intensity of UV radiation emitted from the light guide output end of a UV spot light source. The C6080 uses a UV sensor that exhibits stable sensitivity even after

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Schottky PowerMod

● Schottky barrier rectifier ● Guard ring for reverse protection ● VRRM - 80 to 100 Volts ● High surge capacity ● Reverse energy tested ● Electrically isolated baseplate ● ROHS Compliant

MICROSEMI

美高森美

DOUBLE HETEROJUNCTION LOW CURRENT DISPLAYS

DESCRIPTION This line of solid state LED displays uses newly developed Double Heterojunction (HD) AIGaAs/GaAs material to emit deep red light at 650 nm. This material has outstanding efficiency at low drive currents and can be either DC or pulse driven. Viewability at up to 10 meters (MAN8000 Ser

FAIRCHILD

仙童半导体

Silicon Schottky Barrier Rectifier

Description: The NTE6080 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: ● Guard–Ring for Stress Protection ● Low Forward Voltage ● +150°C Operating Junction Temperature ● Guaranteed Reverse Avalanche ● Low Power Loss/Hig

NTE

DOUBLE HETEROJUNCTION AIGAAS RED LOW CURRENT DISPLAYS

文件:547.62 Kbytes Page:7 Pages

QT

MBR6080产品属性

  • 类型

    描述

  • Io@Tj(A):

    60

  • IFSM(A):

    700

  • IR@Tj(mA):

    20

  • Designation:

    DO-5

  • Type:

    Discrete

  • Compliance:

    ' ''>

更新时间:2026-8-2 19:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PANJIT
25+23+
TO-3P
28223
绝对原装正品现货,全新深圳原装进口现货
MOTOROLA
24+
MODULE
2050
公司大量全新原装 正品 随时可以发货
PANJIT
19+
TO-3P
18758
MICROCHIP(美国微芯)
26+
-
16000
原装认证库存更多原厂可发
PANJIT
22+
TO-3P
20000
只做原装
MOTOROLA
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
PANJIT
22+
TO-247
6000
十年配单,只做原装
26+
N/A
67000
一级代理-主营优势-实惠价格-不悔选择
PANJIT
23+
TO-3P
50000
全新原装正品现货,支持订货
Microsemi
25+
电联咨询
7800
公司现货,提供拆样技术支持

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