| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR6080 | Schottky Power Diode, 60A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity | NAINA | ||
MBR6080 | Si Schottky Rectifier Diodes 60Amp,90V-100V Schottky Rectifier in DO5 package. | MICROCHIP 微芯科技 | ||
MBR6080 | Schottky Rectifiers | NAVITAS 纳微半导体 | ||
MBR6080 | 封装/外壳:DO-203AB,DO-5,接线柱 包装:散装 描述:DIODE SCHOTTKY 80V 60A DO5 分立半导体产品 二极管 - 整流器 - 单 | GENESIC | ||
MBR6080 | SCHOTTKY DIODES STUD TYPE 60 A 文件:122.18 Kbytes Page:2 Pages | TEL | ||
MBR6080 | SCHOTTKY DIODES STUD TYPE 60A 文件:81.79 Kbytes Page:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
MBR6080 | Silicon Power Schottky Diode 文件:807.46 Kbytes Page:3 Pages | GENESIC | ||
60 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili | PANJIT 強茂 | |||
SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili | PANJIT 強茂 | |||
SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 30 - 100 V CURRENT: 60 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard r | DSK | |||
60Ampere Heatsink Dual Common Cathode Schottky Barrier Rectifier Diodes Features Low forward voltage drop ThinkiSemi matured planar process schottky High current capability High surge current capability Low reverse leakage current Application Inverter/UPS Plating Power Supply/SMPS Car Audio Amplifier and Sound Device System | THINKISEMI 思祁半导体 | |||
Schottky Barrier Rectifiers Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | LUGUANG 鲁光电子 | |||
Schottky Barrier Rectifier Reverse Voltage: 30 to 100V Forward Current: 60.0A RoHS Device Features - Guard ring for overvoltage protection. - Low power loss, high efficiency. - Low reverse leakage current. - High Surge Current Capability. | COMCHIP 典琦 | |||
Schottky Power Diode, 60A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity | NAINA | |||
SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High cur | PANJIT 強茂 | |||
Schottky Barrier Rectifier 文件:223.36 Kbytes Page:2 Pages | ISC 无锡固电 | |||
包装:管件 描述:DIODE SCHOTTKY 60A 80V TO-247AD 分立半导体产品 二极管 - 整流器 - 单 | MICROCHIP 微芯科技 | |||
Si Schottky Rectifier Diodes | MICROCHIP 微芯科技 | |||
SCHOTTKY DIODES STUD TYPE 60 A 文件:122.18 Kbytes Page:2 Pages | TEL | |||
Silicon Power Schottky Diode 文件:807.46 Kbytes Page:3 Pages | GENESIC | |||
SCHOTTKY DIODES STUD TYPE 60A 文件:81.79 Kbytes Page:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
UV Power METERS A Wide Lineup of 248 nm, 365 nm and 436 nm Type The C6080 series is a compact UV power meter specifically designed to measure the intensity of UV radiation emitted from the light guide output end of a UV spot light source. The C6080 uses a UV sensor that exhibits stable sensitivity even after | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | |||
Schottky PowerMod ● Schottky barrier rectifier ● Guard ring for reverse protection ● VRRM - 80 to 100 Volts ● High surge capacity ● Reverse energy tested ● Electrically isolated baseplate ● ROHS Compliant | MICROSEMI 美高森美 | |||
DOUBLE HETEROJUNCTION LOW CURRENT DISPLAYS DESCRIPTION This line of solid state LED displays uses newly developed Double Heterojunction (HD) AIGaAs/GaAs material to emit deep red light at 650 nm. This material has outstanding efficiency at low drive currents and can be either DC or pulse driven. Viewability at up to 10 meters (MAN8000 Ser | FAIRCHILD 仙童半导体 | |||
Silicon Schottky Barrier Rectifier Description: The NTE6080 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: ● Guard–Ring for Stress Protection ● Low Forward Voltage ● +150°C Operating Junction Temperature ● Guaranteed Reverse Avalanche ● Low Power Loss/Hig | NTE | |||
DOUBLE HETEROJUNCTION AIGAAS RED LOW CURRENT DISPLAYS 文件:547.62 Kbytes Page:7 Pages | QT |
MBR6080产品属性
- 类型
描述
- Io@Tj(A):
60
- IFSM(A):
700
- IR@Tj(mA):
20
- Designation:
DO-5
- Type:
Discrete
- Compliance:
' ''>
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANJIT |
25+23+ |
TO-3P |
28223 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
MOTOROLA |
24+ |
MODULE |
2050 |
公司大量全新原装 正品 随时可以发货 |
|||
PANJIT |
19+ |
TO-3P |
18758 |
||||
MICROCHIP(美国微芯) |
26+ |
- |
16000 |
原装认证库存更多原厂可发 |
|||
PANJIT |
22+ |
TO-3P |
20000 |
只做原装 |
|||
MOTOROLA |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
PANJIT |
22+ |
TO-247 |
6000 |
十年配单,只做原装 |
|||
26+ |
N/A |
67000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
PANJIT |
23+ |
TO-3P |
50000 |
全新原装正品现货,支持订货 |
|||
Microsemi |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
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DdatasheetPDF页码索引
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