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MBR6035PT

60A SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

DIODES

美台半导体

MBR6035PT

60.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

TSC

台湾半导体

MBR6035PT

60 AMPERES SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili

PANJIT

強茂

MBR6035PT

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * Plastic package has UL flammabi

SIRECTIFIER

矽莱克电子

MBR6035PT

Schottky Barrier Rectifiers

Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

LUGUANG

鲁光电子

MBR6035PT

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 - 100 V CURRENT: 60 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard r

DSK

MBR6035PT

封装/外壳:TO-247-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 35V TO3P 分立半导体产品 二极管 - 整流器 - 阵列

TSC

台湾半导体

MBR6035PT

封装/外壳:TO-3P-3,SC-65-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 35V TO3P 分立半导体产品 二极管 - 整流器 - 阵列

DIODES

美台半导体

MBR6035PT

肖特基二极管

LUGUANG

鲁光电子

MBR6035PT

60A, 35V, Schottky Rectifier

TSC

台湾半导体

MBR6035PT

Schottky

DIODES

美台半导体

MBR6035PT

High Tjm Low IRRM Schottky Barrier Diodes

文件:133.82 Kbytes Page:2 Pages

SIRECTIFIER

矽莱克电子

MBR6035PT

60 AMPS. Schottky Barrier Rectifiers

文件:369.39 Kbytes Page:2 Pages

TSC

台湾半导体

MBR6035PT

Dual Common Cathode Schottky Rectifier

文件:222.12 Kbytes Page:4 Pages

TSC

台湾半导体

MBR6035PT

60A SCHOTTKY BARRIER RECTIFIER

文件:65.62 Kbytes Page:3 Pages

DIODES

美台半导体

MBR6035PT

60 AMPS. Schottky Barrier Rectifiers

文件:479.39 Kbytes Page:2 Pages

TSC

台湾半导体

MBR6035PT

60.0AMPS. Schottky Barrier Rectifiers High surge capability

文件:251.77 Kbytes Page:3 Pages

TSC

台湾半导体

60 AMPS. Schottky Barrier Rectifiers

文件:369.39 Kbytes Page:2 Pages

TSC

台湾半导体

60 AMPS. Schottky Barrier Rectifiers

文件:479.39 Kbytes Page:2 Pages

TSC

台湾半导体

60.0AMPS. Schottky Barrier Rectifiers High surge capability

文件:251.77 Kbytes Page:3 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:222.12 Kbytes Page:4 Pages

TSC

台湾半导体

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

TECCOR

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

TECCOR

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

TECCOR

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

TECCOR

N-Channel Enhancement-Mode Vertical DMOS Power FETs???

N-Channel Enhancement-Mode Vertical DMOS Power FETs Applications □ Motor control □ Converters □ Amplifiers □ Telecom Switching □ Power supply circuits □ Drivers (Relays, Hammers, Solendnoids, Lamps, Memories, Displays, Bipolar Transistors, etc.)

SUTEX

MBR6035PT产品属性

  • 类型

    描述

  • Compliance (Only Automotive supports PPAP):

    Standard

  • Configuration:

    Dual

  • MaximumAverageRectifiedCurrent IO (A):

    60 A

  • @ TerminalTemperature TT (ºC):

    125 ºC

  • Peak RepetitiveReverse VoltageVRRM (V):

    35 V

  • Peak ForwardSurge CurrentIFSM (A):

    500 A

  • Forward Voltage Drop VF (V):

    0.62 V

  • @ IF (A):

    30 A

  • Maximum ReverseCurrent IR (µA):

    1000 µA

  • @ VR (V):

    35 V

  • TotalCapacitance CT (pF):

    650 pF

  • Packages:

    TO-3P

更新时间:2026-5-18 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Diodes Incorporated
25+
TO-3P
6843
样件支持,可原厂排单订货!
Diodes Incorporated
25+
TO-3P
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
TSC
22+
TO-3P
20000
公司只做原装 品质保障
TSC/台湾半导体
23+
TO-3P
50000
全新原装正品现货,支持订货
ON/安森美
22+
TO-3P
98898
DIODES
23+
TO-3P
8000
专做原装正品,假一罚百!
TSC
25+
TO-3P
20000
原装
Diodes
17+
TO-3P
6200
ON/DIODES/PANJIT
24+
TO3P
43000
Diodes
26+
TO-220
86720
全新原装正品价格最实惠 承诺假一赔百

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