| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR60035CT | HIGH POWER -SCHOTTKY RECTIFIERS SCHOTTKY DIODES MODULE TYPE 600A Features • High Surge Capability • Types Up to 45V VRRM | AMERICASEMI |   | |
MBR60035CT | 封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 35V 300A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列 | GENESIC | | |
MBR60035CT | Schottky Rectifiers | NAVITAS 纳微半导体 | | |
MBR60035CT | Silicon Power Schottky Diode 文件：718.88 Kbytes Page：3 Pages | GENESIC | | |
HIGH POWER -SCHOTTKY RECTIFIERS SCHOTTKY DIODES MODULE TYPE 600A Features • High Surge Capability • Types Up to 45V VRRM | AMERICASEMI | | ||
SCHOTTKY DIODES MODULE TYPE 600A SCHOTTKY DIODES MODULE TYPE 600A Features High Surge Capability Types Up to 45V VRRM | TEL | | ||
Not ESD Sensitive 文件：429.15 Kbytes Page：3 Pages | GENESIC | | ||
Not ESD Sensitive 文件：429.15 Kbytes Page：3 Pages | GENESIC | | ||
Silicon Power Schottky Diode 文件：718.88 Kbytes Page：3 Pages | GENESIC | | ||
封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 35V 300A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列 | GENESIC | | ||
Schottky Rectifiers | NAVITAS 纳微半导体 | | ||
SCHOTTKY POWERMOD Schottky PowerMod • Schottky Barrier Rectifier • Guard Ring Protection • 600 Amperes/35 to 45 Volts • 175°C Junction Temperature • Reverse Energy Tested • ROHS Compliant | MICROSEMI 美高森美 | | ||
SCHOTTKY POWERMOD Schottky PowerMod • Schottky Barrier Rectifier • Guard Ring Protection • 600 Amperes/35 to 45 Volts • 175°C Junction Temperature • Reverse Energy Tested • ROHS Compliant | MICROSEMI 美高森美 | | ||
POWERTAP II??SWITCHMODE??Power Rectifier POWERTAP II™ SWITCHMODE™ Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output • Guardring for Stress Prot | MOTOROLA 摩托罗拉 | | ||
SCHOTTKY POWERMOD Schottky PowerMod • Schottky Barrier Rectifier • Guard Ring Protection • 600 Amperes/35 to 45 Volts • 175°C Junction Temperature • Reverse Energy Tested • ROHS Compliant | MICROSEMI 美高森美 | |
MBR60035CT产品属性
- 类型
描述
- Io@Tj(A)：
600
- IFSM(A)：
4000
- IR@Tj(mA)：
20
- Designation：
Twin-Tower
- Type：
Module
- Compliance：
' ''>
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor |
22+ |
Twin Tower |
9000 |
原厂渠道,现货配单 |
|||
MOTOROLA |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
MOTOROLA |
24+ |
2173 |
公司大量全新正品 随时可以发货 |
||||
IXFN |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
23+ |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||||
26+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
三菱 |
100 |
原装现货,价格优惠 |
|||||
MOTOROLA |
23+ |
模块 |
120 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
GeneSiC |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
MBR60035CT规格书下载地址
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