丝印代码：MBR40200PT；Schottky Barrier Rectifiers

FEATURES High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 100 Volts CURRENT 40 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability

40Ampere Heatsink Dual Common Cathode Schottky Barrier Rectifier Diodes

Features  Low forward voltage drop  ThinkiSemi matured planar process schottky  High current capability  High surge current capability  Low reverse leakage current Application  Inverter/UPS  Plating Power Supply/SMPS  Car Audio Amplifier and Sound Device System

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation and Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction

Schottky Barrier Rectifier

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SCHOTTKY BARRIER RECTIFIER

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封装/外壳：TO-247-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 200V TO247 分立半导体产品 二极管 - 整流器 - 阵列

40.0A SCHOTTKY BARRIER DIODE

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40.0A SCHOTTKY BARRIER DIODE

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SCHOTTKY BARRIER RECTIFIER

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Power Schottky Rectifier - 40Amp 200Volt

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40.0 AMPS. Schottky Barrier Rectifiers

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40.0AMPS. Schottky Barrier Rectifiers High surge capability

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功率肖特基二极管(IF ≧ 1A)

Si Schottky Rectifier Diodes

40 Amp, 50V-60V Schottky Rectifier in TO3P package

包装：卷带（TR） 描述：DIODE SCHOTTKY 40A 200V TO-247AD 分立半导体产品 二极管 - 整流器 - 单

40.0 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

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40.0 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

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SCHOTTKY BARRIER RECTIFIER

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肖特基

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

2M x 40 Bit Dynamic Random Access Memory Module

2M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications

SMR40200

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