MBR3060PT价格
参考价格:¥5.4729
型号:MBR3060PT 品牌:FAIRCHILD 备注:这里有MBR3060PT多少钱,2026年最近7天走势,今日出价,今日竞价,MBR3060PT批发/采购报价,MBR3060PT行情走势销售排行榜,MBR3060PT报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR3060PT | 丝印代码:MBR3060PT;30 A Schottky Barrier Rectifiers Features • Low Power Loss, High Efficiency • High Surge Capacity • Metal Silicon Junction, Majority Carrier Conduction • High Current Capacity, Low Forward Voltage Drop • Guard Ring for Over-Voltage Protection (OVP) Applications • Low-Voltage • High-Frequency Inverters • Free Wheeling | ONSEMI 安森美半导体 | ||
MBR3060PT | 丝印代码:MBR3060PT;Schottky Diodes Features High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-8106. | RFE RFE international | ||
MBR3060PT | 30.0 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSC 台湾半导体 | ||
MBR3060PT | Schottky Rectifiers Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • | FAIRCHILD 仙童半导体 | ||
MBR3060PT | Dual Common-Cathode Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: for definitio | VISHAYVishay Siliconix 威世威世科技公司 | ||
MBR3060PT | Dual Common Cathode Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance | VISHAYVishay Siliconix 威世威世科技公司 | ||
MBR3060PT | 30A SCHOTTKY BARRIER RECTIFIER Features ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications ● L | DIODES 美台半导体 | ||
MBR3060PT | 30 Amp Schottky Barrier Rectifier 20 to 60 Volts Features ● Guard Ring For Transient Protection ● Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 ● Marking : type number ● Low Power Loss, High Efficiency | MCC | ||
MBR3060PT | SCHOTTKY BARRIER RECTIFIERS Feaures High efficiencty operation and Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | ||
MBR3060PT | SCHOTTKY BARRIER RECTIFIER FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | BILIN 银河微电 | ||
MBR3060PT | SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts Forward Current - 30.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high | GE | ||
MBR3060PT | Schottky Barrier Rectifier FEATURES • Low power loss,high efficiency • High surge capability • Metal silicon rectifier, majonty carrier conduction • Guard ring for over voltage protection • High Current Capability, low forward voltage drop • 100 avalanche tested • Minimum Lot-to-Lot variations for robus | ISC 无锡固电 | ||
MBR3060PT | SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volt CURRENT 30 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • High current capability • Guardring for overvoltage protection • For use in | PANJIT 強茂 | ||
MBR3060PT | Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica | SIRECTIFIER 矽莱克电子 | ||
MBR3060PT | 丝印代码:MBR3060CT;SCHOTTKY BARRIER RECTIFIER Features Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Suffix H indicates Halogen-free part, ex.MBR3040BCTH. | SY 顺烨电子 | ||
MBR3060PT | Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A Features ✧ High surge capacity. ✧ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ✧ Metal silicon junction, majority carrier conduction. ✧ High current capacity, low forward voltage drop. ✧ Gu | LUGUANG 鲁光电子 | ||
MBR3060PT | 丝印代码:MBR3060CT;SCHOTTKY BARRIER RECTIFIER Features Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Suffix H indicates Halogen-free part, ex.MBR3040BCTH. | SHUNYE 顺烨电子 | ||
MBR3060PT | SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage d | DSK | ||
MBR3060PT | 30Ampere Heatsink Dual Common Cathode Schottky Barrier Rectifier Diodes Features Low forward voltage drop ThinkiSemi matured planar process schottky High current capability High surge current capability Low reverse leakage current Application Inverter/UPS Plating Power Supply/SMPS Car Audio Amplifier and Sound Device System | THINKISEMI 思祁半导体 | ||
MBR3060PT | 30 A 肖特基势垒整流器 该中心抽头MBR肖特基整流器针对次级端整流和续流应用优化,适用于高效率DC-DC转换器设计,具有极低的正向压降和低泄露电流特性。 •低功率损耗、高效率\n•高浪涌能力\n•金属硅结,大部分为载波传导\n•高电流容量,低正向压降\n•护圈,适合过压保护应用(OVP); | ONSEMI 安森美半导体 | ||
MBR3060PT | 封装/外壳:TO-3P-3,SC-65-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 60V TO3P 分立半导体产品 二极管 - 整流器 - 阵列 | DIODES 美台半导体 | ||
MBR3060PT | 封装/外壳:TO-247-3 包装:散装 描述:DIODE ARRAY SCHOTTKY 60V TO247AD 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMI 安森美半导体 | ||
MBR3060PT | SCHOTTKY BARRIER TYPE DIODE 文件:271.33 Kbytes Page:2 Pages | FS | ||
MBR3060PT | SCHOTTKY BARRIER RECTIFIER 文件:318.76 Kbytes Page:3 Pages | HORNBY 南通康比电子 | ||
MBR3060PT | DIODE ARRAY SCHOTTKY 60V TO3P | DIODES 美台半导体 | ||
MBR3060PT | 30.0A SCHOTTKY BARRIER DIODE 文件:165.94 Kbytes Page:2 Pages | ZSELEC 淄博圣诺 | ||
MBR3060PT | 30.0A SCHOTTKY BARRIER DIODE 文件:140.3 Kbytes Page:2 Pages | ZSELEC 淄博圣诺 | ||
MBR3060PT | SCHOTTKY BARRIER RECTIFIER 文件:738.91 Kbytes Page:3 Pages | YFWDIODE 佑风微 | ||
MBR3060PT | High Tjm Low IRRM Schottky Barrier Diodes 文件:136.83 Kbytes Page:2 Pages | SIRECTIFIER 矽莱克电子 | ||
MBR3060PT | 30 AMPERES SCHOTTKY BARRIER RECTIFIERS 文件:41.25 Kbytes Page:2 Pages | PANJIT 強茂 | ||
MBR3060PT | 30A SCHOTTKY BARRIER RECTIFIER 文件:62.84 Kbytes Page:3 Pages | DIODES 美台半导体 | ||
MBR3060PT | Dual Common Cathode Schottky Rectifier 文件:87.25 Kbytes Page:4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | ||
MBR3060PT | 30.0AMPS. Schottky Barrier Rectifiers 文件:133.87 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBR3060PT | 30.0 AMPS. Schottky Barrier Rectifiers 文件:321.75 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBR3060PT | Dual Common Cathode Schottky Rectifier 文件:220.62 Kbytes Page:4 Pages | TSC 台湾半导体 | ||
Dual Common-Cathode Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: for definitio | VISHAYVishay Siliconix 威世威世科技公司 | |||
30 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers Features * Standard MBR matured technology with high reliablity * Low forward voltage drop * High current capability * Low reverse leakage current * High surge current capability Application * Automotive Inverters/Solar Inverters * Plating Power Supply,SMPS and UPS * Car Audio Amplifiers | THINKISEMI 思祁半导体 | |||
Dual Common Cathode Schottky Rectifier 文件:220.62 Kbytes Page:4 Pages | TSC 台湾半导体 | |||
Dual Common Cathode Schottky Rectifier 文件:220.62 Kbytes Page:4 Pages | TSC 台湾半导体 | |||
Dual Common-Cathode Schottky Rectifier | VISHAYVishay Siliconix 威世威世科技公司 | |||
Dual Common Cathode Schottky Rectifier 文件:220.62 Kbytes Page:4 Pages | TSC 台湾半导体 | |||
SCHOTTKY BARRIER RECTIFIER 文件:738.91 Kbytes Page:3 Pages | YFWDIODE 佑风微 | |||
ULTRAFAST RECTIFIERS 30 AMPERES 200-400-600 VOLTS ULTRAFAST RECTIFIERS 30 AMPERES 200–400–600 VOLTS . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temperatur | MOTOROLA 摩托罗拉 | |||
ULTRAFAST RECTIFIERS 30 AMPERES 200-400-600 VOLTS ULTRAFAST RECTIFIERS 30 AMPERES 200–400–600 VOLTS . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temper | MOTOROLA 摩托罗拉 | |||
ULTRAFAST RECTIFIERS 30 AMPERES 200-400-600 VOLTS ULTRAFAST RECTIFIERS 30 AMPERES 200–400–600 VOLTS . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temperatur | MOTOROLA 摩托罗拉 | |||
0.3??Single Digit Numeric Display, Seven Segment, Common Cathode Description: The NTE3056 through NTE3060 are 0.3 inch (7.62mm) height single digit, seven segment, common cathode displays. The NTE3056 and NTE3057 utilize LED chips which are made from GaAsP on a GaAs substrate. The NTE3059 utilizes LED chips which are made from GaP on a transparent GaP substrat | NTE | |||
SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 60 Volts CURRENT - 30.0 Ampere) FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forward voltage, high current capability • High surge capacity. | PANJIT 強茂 |
MBR3060PT产品属性
- 类型
描述
- Compliance:
Pb-free
- Status:
Active
- Description:
30 A Schottky Barrier Rectifiers
- Configuration:
Dual & Common Cathode
- VRRM Min (V):
60
- VF Max (V):
750
- IRM Max (µA):
5000
- IO(rec) Max (A):
30
- IFSM Max (A):
200
- Package Type:
TO-247-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
26+ |
SOP-14 |
86720 |
全新原装正品价格最实惠 承诺假一赔百 |
|||
PEC |
2450+ |
TO247 |
6540 |
只做原厂原装正品终端客户免费申请样品 |
|||
FAIRCHILD |
25+ |
TO-247 |
40 |
普通 |
|||
ON |
25+ |
TO-247 |
380 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
VISHAY |
25+23+ |
TO-247 |
15554 |
绝对原装正品全新进口深圳现货 |
|||
LINEAR/凌特 |
2223+ |
TO-3P |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
仙童 |
05+ |
TO-247 |
8000 |
原装进口 |
|||
ON/安森美 |
21+ |
TO-247 |
8080 |
只做原装,质量保证 |
|||
GI |
25+ |
TO-3P |
27500 |
原装正品,价格最低! |
|||
VISHAY |
23+ |
TO-3P |
1800 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
MBR3060PT规格书下载地址
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