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MBR3045PT价格

参考价格:¥5.2407

型号:MBR3045PT 品牌:FAIRCHILD 备注:这里有MBR3045PT多少钱,2026年最近7天走势,今日出价,今日竞价,MBR3045PT批发/采购报价,MBR3045PT行情走势销售排行榜,MBR3045PT报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBR3045PT

丝印代码:MBR3045PT;30 A Schottky Barrier Rectifiers

Features • Low Power Loss, High Efficiency • High Surge Capacity • Metal Silicon Junction, Majority Carrier Conduction • High Current Capacity, Low Forward Voltage Drop • Guard Ring for Over-Voltage Protection (OVP) Applications • Low-Voltage • High-Frequency Inverters • Free Wheeling

ONSEMI

安森美半导体

MBR3045PT

丝印代码:MBR3045PT;Schottky Barrier Rectifiers

FEATURES ●Multilayer Metal -Silicon Potential Structure. ●Low Leakage Current. ●High Current Capability, High Efficiency. ●High Junction Temperature Capability.

RFE

RFE international

MBR3045PT

30.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

TSC

台湾半导体

MBR3045PT

Dual Common-Cathode Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: for definitio

VISHAYVishay Siliconix

威世威世科技公司

MBR3045PT

30 Amp Schottky Barrier Rectifier 20 to 60 Volts

Features ● Guard Ring For Transient Protection ● Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 ● Marking : type number ● Low Power Loss, High Efficiency

MCC

MBR3045PT

Schottky Rectifiers

Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. •

FAIRCHILD

仙童半导体

MBR3045PT

Dual Common Cathode Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance

VISHAYVishay Siliconix

威世威世科技公司

MBR3045PT

30A SCHOTTKY BARRIER RECTIFIER

Features ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications ● L

DIODES

美台半导体

MBR3045PT

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation and Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction

SUNMATE

森美特

MBR3045PT

SCHOTTKY BARRIER RECTIFIER

FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

BILIN

银河微电

MBR3045PT

SCHOTTKY RECTIFIER

Reverse Voltage - 35 to 60 Volts Forward Current - 30.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high

GE

MBR3045PT

Schottky Barrier Rectifier

FEATURES • Dual Rectifier Conduction • High Surge Capacity • High Current Capability, Low Forward Voltage Drop • Guarding for Overvoltage protection APPLICATIONS • For use in low voltage,high frequency inverters,free wheeling, and polarity protection applications.

ISC

无锡固电

MBR3045PT

SWITCHMODE POWER RECTIRERS

SWITCHMODE POWER RECTIFIERS 30 AMPERES 35 to 45 VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MBR3045PT

SWITCHMODE Power Rectifier

These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating • Guard−ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tem

ONSEMI

安森美半导体

MBR3045PT

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volt CURRENT 30 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • High current capability • Guardring for overvoltage protection • For use in

PANJIT

強茂

MBR3045PT

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica

SIRECTIFIER

矽莱克电子

MBR3045PT

丝印代码:MBR3045CT;SCHOTTKY BARRIER RECTIFIER

Features Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Suffix H indicates Halogen-free part, ex.MBR3040BCTH.

SY

顺烨电子

MBR3045PT

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A Features ✧ High surge capacity. ✧ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ✧ Metal silicon junction, majority carrier conduction. ✧ High current capacity, low forward voltage drop. ✧ Gu

LUGUANG

鲁光电子

MBR3045PT

30A SCHOTTKY RECTIFIER

30A SCHOTTKY RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

DIGITRON

MBR3045PT

丝印代码:MBR3045CT;SCHOTTKY BARRIER RECTIFIER

Features Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Suffix H indicates Halogen-free part, ex.MBR3040BCTH.

SHUNYE

顺烨电子

MBR3045PT

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage d

DSK

MBR3045PT

30Ampere Heatsink Dual Common Cathode Schottky Barrier Rectifier Diodes

Features  Low forward voltage drop  ThinkiSemi matured planar process schottky  High current capability  High surge current capability  Low reverse leakage current Application  Inverter/UPS  Plating Power Supply/SMPS  Car Audio Amplifier and Sound Device System

THINKISEMI

思祁半导体

MBR3045PT

Dual Common-Cathode Schottky Rectifier

DESCRIPTION The MBR3045PT Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature FEATURES • 150°C TJ operation • High frequency operation • Low forward voltage drop •

NELLSEMI

尼尔半导体

MBR3045PT

封装/外壳:TO-3P-3,SC-65-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 45V TO3P 分立半导体产品 二极管 - 整流器 - 阵列

DIODES

美台半导体

MBR3045PT

封装/外壳:TO-218-3 包装:卷带(TR)剪切带(CT) 描述:DIODE ARRAY SCHOTTKY 45V SOT93 分立半导体产品 二极管 - 整流器 - 阵列

ONSEMI

安森美半导体

MBR3045PT

Schottky Barrier Rectifiers

MCC

MBR3045PT

功率肖特基二极管(IF ≧ 1A)

PANJIT

強茂

MBR3045PT

DIODE ARRAY SCHOTTKY 45V TO3P

DIODES

美台半导体

MBR3045PT

SCHOTTKY BARRIER TYPE DIODE

文件:271.33 Kbytes Page:2 Pages

FS

MBR3045PT

SCHOTTKY BARRIER RECTIFIER

文件:318.76 Kbytes Page:3 Pages

HORNBY

南通康比电子

MBR3045PT

30.0A SCHOTTKY BARRIER DIODE

文件:140.3 Kbytes Page:2 Pages

ZSELEC

淄博圣诺

MBR3045PT

30.0A SCHOTTKY BARRIER DIODE

文件:165.94 Kbytes Page:2 Pages

ZSELEC

淄博圣诺

MBR3045PT

SCHOTTKY BARRIER RECTIFIER

文件:1.03968 Mbytes Page:3 Pages

YFWDIODE

佑风微

MBR3045PT

High Tjm Low IRRM Schottky Barrier Diodes

文件:141.63 Kbytes Page:2 Pages

SIRECTIFIER

矽莱克电子

MBR3045PT

30 AMPERES SCHOTTKY BARRIER RECTIFIERS

文件:41.25 Kbytes Page:2 Pages

PANJIT

強茂

MBR3045PT

30A SCHOTTKY BARRIER RECTIFIER

文件:62.84 Kbytes Page:3 Pages

DIODES

美台半导体

MBR3045PT

Dual Common Cathode Schottky Rectifier

文件:87.25 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBR3045PT

30.0 AMPS. Schottky Barrier Rectifiers

文件:321.75 Kbytes Page:2 Pages

TSC

台湾半导体

MBR3045PT

30.0AMPS. Schottky Barrier Rectifiers

文件:133.87 Kbytes Page:2 Pages

TSC

台湾半导体

MBR3045PT

Dual Common Cathode Schottky Rectifier

文件:220.62 Kbytes Page:4 Pages

TSC

台湾半导体

30 A Schottky Barrier Rectifiers

Features • Low Power Loss, High Efficiency • High Surge Capacity • Metal Silicon Junction, Majority Carrier Conduction • High Current Capacity, Low Forward Voltage Drop • Guard Ring for Over-Voltage Protection (OVP) Applications • Low-Voltage • High-Frequency Inverters • Free Wheeling

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating • Guard−ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Tem

ONSEMI

安森美半导体

30 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

Features * Standard MBR matured technology with high reliablity * Low forward voltage drop * High current capability * Low reverse leakage current * High surge current capability Application * Automotive Inverters/Solar Inverters * Plating Power Supply,SMPS and UPS * Car Audio Amplifiers

THINKISEMI

思祁半导体

SCHOTTKY BARRIER RECTIFIER

文件:1.03968 Mbytes Page:3 Pages

YFWDIODE

佑风微

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forw

MOTOROLA

摩托罗拉

Optoisolator Silicon NPN Darlington Phototransistor Output

Description: The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in a 6–Lead DIP type package designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer ratios. Characterized for use as telephone relay d

NTE

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended

PHILIPS

飞利浦

LM3045/LM3046/LM3086 Transistor Arrays

文件:179.01 Kbytes Page:6 Pages

NSC

国半

LM3045/LM3046/LM3086 Transistor Arrays

文件:179.01 Kbytes Page:6 Pages

NSC

国半

MBR3045PT产品属性

  • 类型

    描述

  • VRRM Max.[V]:

    45

  • IF[A]:

    30

  • IFSM[A]:

    275

  • VF@IF Max.[V]:

    0.7

  • VF@IF Max.[A]:

    15

  • IR@VR Max.[µA]:

    100

  • IR@VR Max.[V]:

    45

  • Package:

    TO-3P\\/TO-247AD

更新时间:2026-5-20 16:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES
25+
10
全新原装!优势库存热卖中!
ON
23+
SOD123
3000
原装正品假一罚百!可开增票!
MCC
24+
SOD123
502
全新 发货1-2天
ON
23+
SOD123
12000
正规渠道,只有原装!
24+
3000
公司现货
MCC/美微科
25+
SOD123
98192
价格从优 欢迎来电咨询
MCC
2022+PB
SOD-123
15500
ON/安森美
2450+
TO-218
9850
只做原装正品现货或订货假一赔十!
台湾光宝LT
23+
TO-3P
3840
原厂原装正品
ON
25+
N/A
90000
一级代理商进口原装现货、假一罚十价格合理

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