丝印代码：MBR3045FCTS；Schottky Diodes

High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

肖特基二极管

Schottky Barrier Rectifiers

封装/外壳：TO-220-3 隔离片 包装：盒 描述：SCHOTTKY BARRIER RECTIFIERS 45V 分立半导体产品 二极管 - 整流器 - 阵列

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forw

Optoisolator Silicon NPN Darlington Phototransistor Output

Description: The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in a 6–Lead DIP type package designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer ratios. Characterized for use as telephone relay d

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended

LM3045/LM3046/LM3086 Transistor Arrays

文件：179.01 Kbytes Page：6 Pages

LM3045/LM3046/LM3086 Transistor Arrays

文件：179.01 Kbytes Page：6 Pages