SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 30 - 60 V CURRENT: 20 A FEATURES High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. G

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 60 V CURRENT: 20 A Features ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free 1wheeling, and

SCHOTTKY BARRIER RECTIFIERS

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TO-3P Plastic package Schottky diode

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20.0 AMPS. Schottky Barrier Rectifiers

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20.0 AMPS. Schottky Barrier Rectifiers

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Dual Common Cathode Schottky Rectifier

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肖特基二极管

封装/外壳：TO-247-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 45V TO247AD 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-247-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 45V TO247AD 分立半导体产品 二极管 - 整流器 - 阵列

SWITCHMODE?? Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

SWITCHMODE??Schottky Power Rectifirer

SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara