MBR20120CT SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fr

肖特基二极管

SCHOTTKY RECTIFIER

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SCHOTTKY RECTIFIERS

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20 Amp High Voltage Power Schottky Barrier Rectifier 120Volts

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Power Schottky Rectifier - 20Amp 120Volt

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20 Amp High Voltage Power Schottky Barrier Rectifier 120Volts

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Schottky Barrier Rectifiers

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20 Amp High Voltage Power Schottky Barrier Rectifier 120Volts

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Schottky Barrier Rectifier

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20 Amp High Voltage Power Schottky Barrier Rectifier 120Volts

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萧特基二极体 - Leaded Rectifier-MBR series

1200 V αSiC Silicon Carbide Schottky Barrier Diode

Features • Proprietary αSiC Schottky Barrier Diode technology • Negligible reverse recovery current • Maximum operating junction temperature of 175°C • Improved switching losses vs. Si bipolar diodes • Positive temperature coefficient for ease of paralleling Applications Renewable Industr

LOW VF SCHOTTKY RECTIFIER

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LOW VF SCHOTTKY RECTIFIER

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Ultra low forward voltage drop, low power loss

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Ultra low forward voltage drop, low power loss

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