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MBR1635价格

参考价格:¥2.1694

型号:MBR1635 品牌:Diodes 备注:这里有MBR1635多少钱,2026年最近7天走势,今日出价,今日竞价,MBR1635批发/采购报价,MBR1635行情走势销售排行榜,MBR1635报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBR1635

16 Ampere Schottky Barrier Rectifiers

Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • Guard ring f

FAIRCHILD

仙童半导体

MBR1635

SWITCHMODE Power Rectifiers16 A, 35 and 45 V

SWITCHMODE™ Power Rectifiers 16 A, 35 and 45 V These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Guard−ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Pb−Free Packages are Available

ONSEMI

安森美半导体

MBR1635

Switch Mode Power Rectifiers 16 A, 35 and 45 V

These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Guard−ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Cha

ONSEMI

安森美半导体

MBR1635

Schottky Rectifiers

Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • Guard ring f

ONSEMI

安森美半导体

MBR1635

Schottky Barrier Rectifier

DESCRIPTION The MBR16.. Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and

VISHAYVishay Siliconix

威世威世科技公司

MBR1635

16A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

DIODES

美台半导体

MBR1635

16 Amp Schottky Barrier Rectifier 20 to 60 Volts

Features • Metal of Silicon Rectifier, Majority Conduction • Guard ring for transient protection • High surge capacity, High current capability • Low power loss, High Efficiency • Halogen free available upon request by adding suffix -HF • Epoxy meets UL 94 V-0 flammability rating • Moisture

MCC

MBR1635

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche

MOTOROLA

摩托罗拉

MBR1635

16.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

TSC

台湾半导体

MBR1635

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 30 - 100 V CURRENT: 16 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard

BILIN

银河微电

MBR1635

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 30 - 100 V CURRENT: 16 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard

BILIN

银河微电

MBR1635

16Amp schottky barrier rectifier 20to60 volts

Features ● Metal of siliconrectifier, majonty carrier conducton ● Guard ring for transient protection ● Low power loss high efficiency ● High surge capacity, High current capability

CHENYI

商朗电子

MBR1635

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 35 to 60 V Forward Current - 16 A Features • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • High current capability • Low power loss, high efficiency • Low forward voltage drop • For use in low voltage, high frequency inverte

SEMTECH_ELEC

先之科半导体

MBR1635

SCHOTTKY RECTIFIER

FEATURES ● 150°C TJ operation ● Low forward voltage drop ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● High frequency operation ● Guard ring for enhanced ruggedness and long term reliability APPLICATIONS ● Switching mode power

SENSITRON

MBR1635

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica

SIRECTIFIER

矽莱克电子

MBR1635

Schottky Barrier Rectifier

VOLTAGE RANGE: 30 - 100 V CURRENT: 16 A Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard

LUGUANG

鲁光电子

MBR1635

SCHOTTKY RECTIFIER

Features: • 150 °C TJ operation • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This is a Pb − Free Device • Al

SMC

桑德斯微电子

MBR1635

16A SCHOTTKY RECTIFIERS

DIGITRON

MBR1635

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 30 - 100 V CURRENT: 16 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard

DSK

MBR1635

Metal of siliconrectifier, majonty carrier conducton

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability Maximum Ratings · Operating Temperature: -55°C to +150°C · Storage Temperature: -55°C to +175°C

KERSEMI

MBR1635

Metal of siliconrectifier, majonty carrier conducton

Features ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

KERSEMI

MBR1635

Metal of siliconrectifier, majonty carrier conducton

Features ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

KERSEMI

MBR1635

16.0 AMPS. Schottky Barrier Rectifiers

Features ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

KERSEMI

MBR1635

16.0 Ampere Heatsink Type Single Schottky Barrier Rectifiers

Features ※ Low power loss, high efficiency ※ Guardring for overvoltage protection ※ High surge current capability ※ Compliant to RoHS Directive 2011/65/EU and WEEE 2002/96/EC ※ Halogen-free according to IEC 61249-2-21 definition(Order Note) Application ※ Automotive Inverters and Solar Inver

THINKISEMI

思祁半导体

MBR1635

Metal of siliconrectifier, majonty carrier conducton

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability Maximum Ratings · Operating Temperature: -55°C to +150°C · Storage Temperature: -55°C to +175°C

KERSEMI

MBR1635

Metal of siliconrectifier, majonty carrier conducton

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability Maximum Ratings · Operating Temperature: -55°C to +150°C · Storage Temperature: -55°C to +175°C

KERSEMI

MBR1635

16.0 AMPS. Schottky Barrier Rectifiers

Features ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

KERSEMI

MBR1635

MBR1635/MBR1645/MBRB1635/MBRB1645 SCHOTTKY RECTIFIER

Applications Switching power supply Redundant power subsystems Converters Free-Wheeling diodes Reverse battery protection Features 150℃ TJ operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High

SMCDIODE

桑德斯微电子

MBR1635

肖特基功率整流器,开关模式,16 A,35 V

This Schottky Rectifier uses the Schottky Barrier principle with a platinum barrier metal. • Guardring for Stress Protection\n• Low Forward Voltage\n• 150 C Operating Junction TemperatureMechanical Characteristics:\n• Case: Epoxy, Molded\n• Weight: 1.9 grams (approximately)\n• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable\n• Lead Temperature f;

ONSEMI

安森美半导体

MBR1635

16A SCHOTTKY BARRIER RECTIFIER

DIODES

美台半导体

MBR1635

16.0 AMPS. Schottky Barrier Rectifiers High surge capability

文件:251.63 Kbytes Page:3 Pages

TSC

台湾半导体

MBR1635

封装/外壳:TO-220-2 包装:卷带(TR) 描述:DIODE SCHOTTKY 35V 16A TO220-2 分立半导体产品 二极管 - 整流器 - 单

ONSEMI

安森美半导体

MBR1635

SCHOTTKY BARRIER RECTIFIER

文件:293.67 Kbytes Page:3 Pages

HORNBY

南通康比电子

MBR1635

封装/外壳:TO-220-2 包装:卷带(TR) 描述:DIODE SCHOTTKY 35V 16A TO220AC 分立半导体产品 二极管 - 整流器 - 单

DIODES

美台半导体

MBR1635

16.0 Ampere Heatsink Type Single Schottky Barrier Rectifiers

文件:734.96 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

MBR1635

Schottky Barrier Rectifier

文件:225.5 Kbytes Page:2 Pages

ISC

无锡固电

MBR1635

Low power loss, high efficiency

文件:81.3 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MBR1635

High Tjm Low IRRM Schottky Barrier Diodes

文件:111.98 Kbytes Page:2 Pages

SIRECTIFIER

矽莱克电子

MBR1635

16.0 AMPS. Schottky Barrier Rectifiers

文件:247.26 Kbytes Page:2 Pages

TSC

台湾半导体

MBR1635

Schottky Barrier Rectifier

文件:231.34 Kbytes Page:4 Pages

TSC

台湾半导体

MBR1635

16.0 AMPS. Schottky Barrier Rectifiers

文件:653.02 Kbytes Page:2 Pages

TSC

台湾半导体

MBR1635

16.0 AMPS. Schottky Barrier Rectifiers

文件:276.02 Kbytes Page:2 Pages

TSC

台湾半导体

MBR1635

16 Amp Schottky Barrier Rectifier 20 to 60 Volts

文件:100.95 Kbytes Page:3 Pages

MCC

MBR1635

16 Amp Schottky Barrier Rectifier 20 to 60 Volts

文件:278.36 Kbytes Page:3 Pages

MCC

MBR1635

16A SCHOTTKY BARRIER RECTIFIER

文件:79.68 Kbytes Page:3 Pages

DIODES

美台半导体

MBR1635

Schottky Barrier Rectifiers

文件:246.86 Kbytes Page:3 Pages

GOOD-ARK

固锝电子

MBR1635

Schottky Barrier Rectifier

文件:471.35 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBR1635

Switch Mode Power Rectifiers

文件:68.71 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Switch Mode Power Rectifiers 16 A, 35 and 45 V

These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Guard−ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Cha

ONSEMI

安森美半导体

Schottky Rectifiers

Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • Guard ring f

ONSEMI

安森美半导体

16 Amp Schott ky Barr ier Rectifier 20 to 60 Volts

Features • High Surge Capacity, High Current Capability • Low Power Loss, High Efficiency • Halogen Free Available Upon Request By Adding Suffix -HF • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates Compl

MCC

16Amp schottky barrier rectifier 20to60 volts

Features ● Metal of siliconrectifier, majonty carrier conducton ● Guard ring for transient protection ● Low power loss high efficiency ● High surge capacity, High current capability

CHENYI

商朗电子

Metal of siliconrectifier, majonty carrier conducton

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

KERSEMI

Metal of siliconrectifier, majonty carrier conducton

Features ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

KERSEMI

Metal of siliconrectifier, majonty carrier conducton

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

KERSEMI

Metal of siliconrectifier, majonty carrier conducton

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

KERSEMI

Metal of siliconrectifier, majonty carrier conducton

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

KERSEMI

Metal of siliconrectifier, majonty carrier conducton

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

KERSEMI

Metal of siliconrectifier, majonty carrier conducton

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

KERSEMI

SWITCHMODE Power Rectifiers16 A, 35 and 45 V

SWITCHMODE™ Power Rectifiers 16 A, 35 and 45 V These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Guard−ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Pb−Free Packages are Available

ONSEMI

安森美半导体

MBR1635产品属性

  • 类型

    描述

  • Compliance:

    Pb-free

  • Status:

     Active  

  • Description:

     Schottky Power Rectifier

  • Configuration:

    Single

  • VRRM Min (V):

    35

  • VF Max (V):

    Condition

  • IRM Max (µA):

    Condition

  • IO(rec) Max (A):

    16

  • IFSM Max (A):

    150

  • Package Type:

    TO-220-2

更新时间:2026-5-14 8:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
23+
TO-220C
89630
当天发货全新原装现货
MOTOROLA/摩托罗拉
2026+
TO220
12500
全新原装正品,本司专业配单,大单小单都配
ON
23+
TO-220-2
11846
一级代理商现货批发,原装正品,假一罚十
ONSEMI
25+
TO-220AC
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
VISHAY/威世通
20+
na
65790
原装优势主营型号-可开原型号增税票
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
MBR1635
25+
312
312
ON
2025+
TO-220AC
3577
全新原厂原装产品、公司现货销售
ON/安森美
2450+
TO-220
8850
只做原装正品假一赔十为客户做到零风险!!
VISHAY
25+
TO-220
20000
原装

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