| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR1550CT | 15A Schottky Barrier Rectifier Features ● Schottky barrier chip ● Guard ring die constuction for transient protection ● Low power loss, high efficiency ● High current capability and low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a | VISHAYVishay Siliconix 威世威世科技公司 | ||
MBR1550CT | Dual Schottky Barrier Rectifier Features ● Schottky barrier chip ● Guard ring die constuction for transient protection ● Low power loss, high efficiency ● High current capability and low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a | VISHAYVishay Siliconix 威世威世科技公司 | ||
MBR1550CT | Schottky Rectifiers Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • Guarding for | FAIRCHILD 仙童半导体 | ||
MBR1550CT | 15A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection | DIODES 美台半导体 | ||
MBR1550CT | SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 15 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard | BILIN 银河微电 | ||
MBR1550CT | SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts Forward Current - 15.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop | GE | ||
MBR1550CT | Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica | SIRECTIFIER 矽莱克电子 | ||
MBR1550CT | SCHOTTKY BARRIER RECTIFIER FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection | TSC 台湾半导体 | ||
MBR1550CT | 15.0 AMPS. Schottky Barrier Rectifiers FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection | TSC 台湾半导体 | ||
MBR1550CT | 15.0AMP. Schottky Barrier Rectifiers Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency | LUGUANG 鲁光电子 | ||
MBR1550CT | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -15.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High tem | CHENDA 辰达半导体 | ||
MBR1550CT | SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 30 - 100 V CURRENT: 15 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard | DSK | ||
MBR1550CT | Guard ring die constuction for transient protection Features ● Schottky barrier chip ● Guard ring die constuction for transient protection ● Low power loss, high efficiency ● High current capability and low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a | KERSEMI | ||
MBR1550CT | Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Features ● Schottky barrier chip ● Guard ring die constuction for transient protection ● Low power loss, high efficiency ● High current capability and low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a | KERSEMI | ||
MBR1550CT | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | ||
MBR1550CT | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | ||
MBR1550CT | Schottky Rectifiers • Low power loss, high efficiency.\n• High surge capacity.\n• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.\n• Metal silicon junction, majority carrier conduction.\n• High current capacity, low forward voltage drop.\n• Guarding for over voltag; | ONSEMI 安森美半导体 | ||
MBR1550CT | Schottky | DIODES 美台半导体 | ||
MBR1550CT | 封装/外壳:TO-220-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 50V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | DIODES 美台半导体 | ||
MBR1550CT | 封装/外壳:TO-220-3 包装:散装 描述:DIODE ARRAY SCHOTTKY 50V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMI 安森美半导体 | ||
MBR1550CT | Reverse Voltage 35 to 60 Volts Forward Current 15.0 Amperes 文件:322.08 Kbytes Page:3 Pages | FS | ||
MBR1550CT | SCHOTTKY BARRIER RECTIFIER 文件:275.88 Kbytes Page:3 Pages | HORNBY 南通康比电子 | ||
MBR1550CT | 15.0AMP. Schottky Barrier Rectifiers 文件:1.00305 Mbytes Page:2 Pages | KERSEMI | ||
MBR1550CT | 15.0 AMPS. Schottky Barrier Rectifiers 文件:967.14 Kbytes Page:2 Pages | KERSEMI | ||
MBR1550CT | High current capability, low forward voltage 文件:535.38 Kbytes Page:4 Pages | MAKOSEMI 美科半导体 | ||
MBR1550CT | High current capability, low forward voltage 文件:535.38 Kbytes Page:4 Pages | MAKOSEMI 美科半导体 | ||
MBR1550CT | 15.0 AMPS. Schottky Barrier Rectifiers 文件:99.54 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBR1550CT | 15.0 AMPS. Schottky Barrier Rectifiers 文件:483.34 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBR1550CT | 15.0 AMPS. Schottky Barrier Rectifiers 文件:202.77 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBR1550CT | Dual Common Cathode Schottky Rectifier 文件:212.86 Kbytes Page:4 Pages | TSC 台湾半导体 | ||
MBR1550CT | High Tjm Low IRRM Schottky Barrier Diodes 文件:92.78 Kbytes Page:2 Pages | SIRECTIFIER 矽莱克电子 | ||
MBR1550CT | 15A SCHOTTKY BARRIER RECTIFIER 文件:67.52 Kbytes Page:3 Pages | DIODES 美台半导体 | ||
MBR1550CT | Dual Common-Cathode Schottky Rectifier 文件:505.23 Kbytes Page:5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | ||
MBR1550CT | Dual Common Cathode Schottky Rectifier 文件:165.12 Kbytes Page:6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | ||
High Tjm Low IRRM Schottky Barrier Diodes 文件:92.78 Kbytes Page:2 Pages | SIRECTIFIER 矽莱克电子 | |||
DIODE ARRAY SCHOTTKY 50V TO220AB | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | |||
800MHz BAND MIXER GaAs MMIC 文件:345.58 Kbytes Page:15 Pages | NJRC 日本无线 | |||
10-BIT ANALOG-TO-DIGITAL CONVERTERS WITH PARALLEL OUTPUTS 文件:139.41 Kbytes Page:9 Pages | TI 德州仪器 |
MBR1550CT产品属性
- 类型
描述
- Compliance (Only Automotive supports PPAP):
Standard
- Configuration:
Dual
- MaximumAverageRectifiedCurrent IO (A):
15 A
- @ TerminalTemperature TT (ºC):
125 ºC
- Peak RepetitiveReverse VoltageVRRM (V):
50 V
- Peak ForwardSurge CurrentIFSM (A):
150 A
- Forward Voltage Drop VF (V):
0.9 V
- @ IF (A):
15 A
- Maximum ReverseCurrent IR (µA):
1000 µA
- @ VR (V):
50 V
- TotalCapacitance CT (pF):
300 pF
- Packages:
TO220AB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRC |
24+ |
TO-220AB |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
|||
VISHAY |
25+23+ |
TO-220AB |
29148 |
绝对原装正品全新进口深圳现货 |
|||
TSC/GS |
17+ |
TO-220 |
6200 |
||||
24+ |
3000 |
公司现货 |
|||||
DIODES |
2016+ |
TO-220AB |
16000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
VISHAY |
26+ |
TO-220AB |
86720 |
全新原装正品价格最实惠 承诺假一赔百 |
|||
GS |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
VISHAY/威世 |
23+ |
TO-220A |
8215 |
原厂原装 |
|||
VISHAY/威世 |
25+ |
TO-220AB |
32360 |
VISHAY/威世全新特价MBR1550CT-E3/45即刻询购立享优惠#长期有货 |
|||
VISHAY/威世 |
11+ |
TO-220AB |
3529 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
MBR1550CT规格书下载地址
MBR1550CT参数引脚图相关
- ne555定时器
- ne555
- nand闪存
- n74
- n100
- mxt
- murata
- mt7201
- mt6795
- msm8625q
- msm7227a
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- mega16
- MCU
- mc34063
- MBR1680
- MBR1670
- MBR1660
- MBR1650
- MBR1645
- MBR1640
- MBR1635
- MBR1630
- MBR1620
- MBR160G
- MBR160F
- MBR160
- MBR16
- MBR15H60CTHE3/45
- MBR15H60CT-E3/45
- MBR15H60CT/45
- MBR15H45CTHE3/45
- MBR15H45CT-E3/45
- MBR15H45CT/45
- MBR15CT
- MBR1590CT
- MBR158W
- MBR1580
- MBR158
- MBR156W
- MBR1560CTHE3/45
- MBR1560CT-E3/45
- MBR1560CT-E3
- MBR1560CT2
- MBR1560CT_Q
- MBR1560CT/45
- MBR1560CT C0
- MBR1560CT
- MBR1560
- MBR156
- MBR1550CTHE3/45
- MBR1550CT-E3/45
- MBR1550CT_Q
- MBR1550CT/45
- MBR1550
- MBR154W
- MBR1545CTPBF
- MBR1545CTHE3/45
- MBR1545CTG
- MBR1545CT-E3\45
- MBR1545CT-E3/45
- MBR1545CT-E3
- MBR1545CT-BP
- MBR1545CT-1PBF
- MBR1545CT-1
- MBR1545CT_Q
- MBR1545CT/45
- MBR1545CT
- MBR1545
- MBR1540CT
- MBR1540
- MBR154
- MBR1535CTPBF
- MBR1535CTHE3/45
- MBR1535CTG
- MBR1535CT-E3/45
- MBR1535CT-1PBF
- MBR1535
- MBR1530
- MBR152W
- MBR1520
- MBR152
- MBR151W
- MBR1510
- MBR151
- MBR150G
- MBR150F
- MBR1508
- MBR1506
- MBR1505
- MBR1504
- MBR1502
MBR1550CT数据表相关新闻
MBR12U100L-TP
MBR12U100L-TP
2024-2-28MBR120LSFT1G全新原装深圳现货
MBR120LSFT1G
2023-3-2MBR20100CL-TO220F1T-TG
MBR20100CL-TO220F1T-TG
2023-1-31MBR20100CT CJ/长电 TO-220-3L 支持原装长电订货型号,欢迎咨询!
MBR20100CT CJ/长电 TO-220-3L
2021-3-18MBR20100CT
MBR20100CT
2019-12-6MBR120LSFT1GMBR120LSF丝印:B3SOD-123贴片肖特基全新现
MBR120LSFT1G MBR120LSF 丝印:B3 SOD-123 贴片肖特基 全新现
2019-2-25
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
- P110