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MBR1550CT

15A Schottky Barrier Rectifier

Features ● Schottky barrier chip ● Guard ring die constuction for transient protection ● Low power loss, high efficiency ● High current capability and low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a

VISHAYVishay Siliconix

威世威世科技公司

MBR1550CT

Dual Schottky Barrier Rectifier

Features ● Schottky barrier chip ● Guard ring die constuction for transient protection ● Low power loss, high efficiency ● High current capability and low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a

VISHAYVishay Siliconix

威世威世科技公司

MBR1550CT

Schottky Rectifiers

Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • Guarding for

FAIRCHILD

仙童半导体

MBR1550CT

15A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

DIODES

美台半导体

MBR1550CT

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 30 - 100 V CURRENT: 15 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard

BILIN

银河微电

MBR1550CT

SCHOTTKY RECTIFIER

Reverse Voltage - 35 to 60 Volts Forward Current - 15.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop

GE

MBR1550CT

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica

SIRECTIFIER

矽莱克电子

MBR1550CT

SCHOTTKY BARRIER RECTIFIER

FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

TSC

台湾半导体

MBR1550CT

15.0 AMPS. Schottky Barrier Rectifiers

FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

TSC

台湾半导体

MBR1550CT

15.0AMP. Schottky Barrier Rectifiers

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

LUGUANG

鲁光电子

MBR1550CT

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current -15.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High tem

CHENDA

辰达半导体

MBR1550CT

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 - 100 V CURRENT: 15 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard

DSK

MBR1550CT

Guard ring die constuction for transient protection

Features ● Schottky barrier chip ● Guard ring die constuction for transient protection ● Low power loss, high efficiency ● High current capability and low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a

KERSEMI

MBR1550CT

Plastic package has Underwriters Laboratory Flammability Classifications 94V-0

Features ● Schottky barrier chip ● Guard ring die constuction for transient protection ● Low power loss, high efficiency ● High current capability and low forward voltage drop ● High surge capability ● For use in low voltage, high frequency inverters, free wheeling, and polarity protection a

KERSEMI

MBR1550CT

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SAMYANG

三阳电子

MBR1550CT

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SAMYANG

三阳电子

MBR1550CT

Schottky Rectifiers

• Low power loss, high efficiency.\n• High surge capacity.\n• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.\n• Metal silicon junction, majority carrier conduction.\n• High current capacity, low forward voltage drop.\n• Guarding for over voltag;

ONSEMI

安森美半导体

MBR1550CT

Schottky

DIODES

美台半导体

MBR1550CT

封装/外壳:TO-220-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 50V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

DIODES

美台半导体

MBR1550CT

封装/外壳:TO-220-3 包装:散装 描述:DIODE ARRAY SCHOTTKY 50V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

ONSEMI

安森美半导体

MBR1550CT

Reverse Voltage 35 to 60 Volts Forward Current 15.0 Amperes

文件:322.08 Kbytes Page:3 Pages

FS

MBR1550CT

SCHOTTKY BARRIER RECTIFIER

文件:275.88 Kbytes Page:3 Pages

HORNBY

南通康比电子

MBR1550CT

15.0AMP. Schottky Barrier Rectifiers

文件:1.00305 Mbytes Page:2 Pages

KERSEMI

MBR1550CT

15.0 AMPS. Schottky Barrier Rectifiers

文件:967.14 Kbytes Page:2 Pages

KERSEMI

MBR1550CT

High current capability, low forward voltage

文件:535.38 Kbytes Page:4 Pages

MAKOSEMI

美科半导体

MBR1550CT

High current capability, low forward voltage

文件:535.38 Kbytes Page:4 Pages

MAKOSEMI

美科半导体

MBR1550CT

15.0 AMPS. Schottky Barrier Rectifiers

文件:99.54 Kbytes Page:2 Pages

TSC

台湾半导体

MBR1550CT

15.0 AMPS. Schottky Barrier Rectifiers

文件:483.34 Kbytes Page:2 Pages

TSC

台湾半导体

MBR1550CT

15.0 AMPS. Schottky Barrier Rectifiers

文件:202.77 Kbytes Page:2 Pages

TSC

台湾半导体

MBR1550CT

Dual Common Cathode Schottky Rectifier

文件:212.86 Kbytes Page:4 Pages

TSC

台湾半导体

MBR1550CT

High Tjm Low IRRM Schottky Barrier Diodes

文件:92.78 Kbytes Page:2 Pages

SIRECTIFIER

矽莱克电子

MBR1550CT

15A SCHOTTKY BARRIER RECTIFIER

文件:67.52 Kbytes Page:3 Pages

DIODES

美台半导体

MBR1550CT

Dual Common-Cathode Schottky Rectifier

文件:505.23 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBR1550CT

Dual Common Cathode Schottky Rectifier

文件:165.12 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Tjm Low IRRM Schottky Barrier Diodes

文件:92.78 Kbytes Page:2 Pages

SIRECTIFIER

矽莱克电子

DIODE ARRAY SCHOTTKY 50V TO220AB

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

800MHz BAND MIXER GaAs MMIC

文件:345.58 Kbytes Page:15 Pages

NJRC

日本无线

10-BIT ANALOG-TO-DIGITAL CONVERTERS WITH PARALLEL OUTPUTS

文件:139.41 Kbytes Page:9 Pages

TI

德州仪器

MBR1550CT产品属性

  • 类型

    描述

  • Compliance (Only Automotive supports PPAP):

    Standard

  • Configuration:

    Dual

  • MaximumAverageRectifiedCurrent IO (A):

    15 A

  • @ TerminalTemperature TT (ºC):

    125 ºC

  • Peak RepetitiveReverse VoltageVRRM (V):

    50 V

  • Peak ForwardSurge CurrentIFSM (A):

    150 A

  • Forward Voltage Drop VF (V):

    0.9 V

  • @ IF (A):

    15 A

  • Maximum ReverseCurrent IR (µA):

    1000 µA

  • @ VR (V):

    50 V

  • TotalCapacitance CT (pF):

    300 pF

  • Packages:

    TO220AB

更新时间:2026-8-2 17:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRC
24+
TO-220AB
16800
绝对原装进口现货 假一赔十 价格优势!?
VISHAY
25+23+
TO-220AB
29148
绝对原装正品全新进口深圳现货
TSC/GS
17+
TO-220
6200
24+
3000
公司现货
DIODES
2016+
TO-220AB
16000
只做原装,假一罚十,公司可开17%增值税发票!
VISHAY
26+
TO-220AB
86720
全新原装正品价格最实惠 承诺假一赔百
GS
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
VISHAY/威世
23+
TO-220A
8215
原厂原装
VISHAY/威世
25+
TO-220AB
32360
VISHAY/威世全新特价MBR1550CT-E3/45即刻询购立享优惠#长期有货
VISHAY/威世
11+
TO-220AB
3529
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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