| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR12020 | 120 Amp Rectifier 20 to 100 Volts Schottky Barrier Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability | MCC |   | |
MBR12020 | SCHOTTKY DIODES MODULE TYPE 120A Features High Surge Capability Types Up to 100V VRRM | TEL | | |
SCHOTTKY DIODES MODULE TYPE 120A Features High Surge Capability Types Up to 100V VRRM | TEL | | ||
Silicon Schottky Diode, 120A Features • Guard Ring Protection • Low forward voltage drop • High surge current capability • Up to 100V VRRM | NAINA | | ||
Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive | GENESIC | | ||
SCHOTTKY DIODES MODULE TYPE 120A Features High Surge Capability Types Up to 100V VRRM | TEL | | ||
Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive | GENESIC | | ||
SCHOTTKY DIODES MODULE TYPE 120A Features High Surge Capability Types Up to 100V VRRM | TEL | | ||
Silicon Power Schottky Diode 文件：717.01 Kbytes Page：3 Pages | GENESIC | | ||
Silicon Power Schottky Diode 文件：508.01 Kbytes Page：3 Pages | GENESIC | | ||
High Surge Capability 文件：508.01 Kbytes Page：3 Pages | GENESIC | | ||
Silicon Power Schottky Diode 文件：717.01 Kbytes Page：3 Pages | GENESIC | | ||
Schottky Rectifiers | NAVITAS 纳微半导体 | | ||
封装/外壳：双塔架 包装：散装 描述：DIODE SCHOTTKY 200V 60A 2 TOWER 分立半导体产品 二极管 - 整流器 - 阵列 | GENESIC | | ||
封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 20V 120A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列 | GENESIC | | ||
Schottky Rectifiers | NAVITAS 纳微半导体 | | ||
Silicon Power Schottky Diode 文件：723.57 Kbytes Page：3 Pages | GENESIC | | ||
Silicon Power Schottky Diode 文件：723.57 Kbytes Page：3 Pages | GENESIC | | ||
HIGH POWER-SCHOTTKY RECTIFIERS 文件：442.02 Kbytes Page：2 Pages | AMERICASEMI | | ||
Silicon Power Schottky Diode 文件：723.57 Kbytes Page：3 Pages | GENESIC | | ||
Schottky Rectifiers | NAVITAS 纳微半导体 | | ||
120 Amp Rectifier 20 to 100 Volts Schottky Barrier Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | MCC | | ||
ULTRA FAST RECOVERY MODULES Ultrafast Recovery Modules • Ultra Fast Recovery • 175 °C Junction Temperature • VRRM 100 to 800 Volts • High surge capacity • 2 X 60 Amp current rating | MICROSEMI 美高森美 | | ||
12-Bit, 20 MSPS, 185 mW A/D Converter with Internal Sample-and-Hold 文件：621.25 Kbytes Page：23 Pages | NSC 国半 | | ||
12-Bit, 20 MSPS, 185 mW A/D Converter with Internal Sample-and-Hold 文件：621.25 Kbytes Page：23 Pages | NSC 国半 | |
MBR12020产品属性
- 类型
描述
- Io@Tj(A)：
120
- IFSM(A)：
800
- IR@Tj(mA)：
20
- Designation：
Twin-Tower
- Type：
Module
- Compliance：
' ''>
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor |
22+ |
Twin Tower |
9000 |
原厂渠道,现货配单 |
|||
ON |
23+ |
SOD123 |
3000 |
原装正品假一罚百!可开增票! |
|||
MCC |
2022+PB |
SOD-123 |
15500 |
||||
MOTOROLA |
24+ |
MODULE |
2050 |
公司大量全新原装 正品 随时可以发货 |
|||
IXFN |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
ON/安森美 |
22+ |
DO-219AB |
20000 |
公司只有原装 品质保障 |
|||
ON |
25+ |
N/A |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
ON |
15+ |
SOD123 |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON |
23+ |
SOD123 |
12000 |
正规渠道,只有原装! |
|||
ON |
2023+ |
SOD123 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
MBR12020规格书下载地址
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2019-2-25
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