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型号 功能描述 生产厂家 企业 LOGO 操作
MBR12020

120 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

MCC

MBR12020

SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

TEL

SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

TEL

Silicon Schottky Diode, 120A

Features • Guard Ring Protection • Low forward voltage drop • High surge current capability • Up to 100V VRRM

NAINA

Silicon Power Schottky Diode

Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive

GENESIC

SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

TEL

Silicon Power Schottky Diode

Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive

GENESIC

SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

TEL

Silicon Power Schottky Diode

文件:717.01 Kbytes Page:3 Pages

GENESIC

Silicon Power Schottky Diode

文件:508.01 Kbytes Page:3 Pages

GENESIC

High Surge Capability

文件:508.01 Kbytes Page:3 Pages

GENESIC

Silicon Power Schottky Diode

文件:717.01 Kbytes Page:3 Pages

GENESIC

Schottky Rectifiers

NAVITAS

纳微半导体

封装/外壳:双塔架 包装:散装 描述:DIODE SCHOTTKY 200V 60A 2 TOWER 分立半导体产品 二极管 - 整流器 - 阵列

GENESIC

封装/外壳:双塔架 包装:散装 描述:DIODE MODULE 20V 120A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

GENESIC

Schottky Rectifiers

NAVITAS

纳微半导体

Silicon Power Schottky Diode

文件:723.57 Kbytes Page:3 Pages

GENESIC

Silicon Power Schottky Diode

文件:723.57 Kbytes Page:3 Pages

GENESIC

HIGH POWER-SCHOTTKY RECTIFIERS

文件:442.02 Kbytes Page:2 Pages

AMERICASEMI

Silicon Power Schottky Diode

文件:723.57 Kbytes Page:3 Pages

GENESIC

Schottky Rectifiers

NAVITAS

纳微半导体

120 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

MCC

ULTRA FAST RECOVERY MODULES

Ultrafast Recovery Modules • Ultra Fast Recovery • 175 °C Junction Temperature • VRRM 100 to 800 Volts • High surge capacity • 2 X 60 Amp current rating

MICROSEMI

美高森美

12-Bit, 20 MSPS, 185 mW A/D Converter with Internal Sample-and-Hold

文件:621.25 Kbytes Page:23 Pages

NSC

国半

12-Bit, 20 MSPS, 185 mW A/D Converter with Internal Sample-and-Hold

文件:621.25 Kbytes Page:23 Pages

NSC

国半

MBR12020产品属性

  • 类型

    描述

  • Io@Tj(A):

    120

  • IFSM(A):

    800

  • IR@Tj(mA):

    20

  • Designation:

    Twin-Tower

  • Type:

    Module

  • Compliance:

    ' ''>

更新时间:2026-5-18 18:53:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
22+
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20000
公司只有原装 品质保障
MCC
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MCC
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一级代理 原装正品假一罚十价格优势长期供货
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公司优势库存 热卖中!
MCC/美微科
25+
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Bychip/百域芯
21+
SOD-123
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优势供应 品质保障 可开13点发票
MOTOROLA
24+
MODULE
2050
公司大量全新原装 正品 随时可以发货
MCC
24+
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全新 发货1-2天
ON
23+
SOD123
12000
正规渠道,只有原装!
M
05+
原厂原装
8057
只做全新原装真实现货供应

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