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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR1090-M3 | High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 |   | |
MBR1090-M3 | High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vish | VishayVishay Siliconix 威世科技威世科技半导体 | | |
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vish | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
封装/外壳：TO-220-2 包装：卷带（TR） 描述：DIODE SCHOTTKY 90V 10A TO220AC 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High Voltage Trench MOS Barrier Schottky Rectifier 文件：108.05 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance plea | VishayVishay Siliconix 威世科技威世科技半导体 | |
MBR1090-M3产品属性
- 类型
描述
- 型号
MBR1090-M3
- 制造商
Vishay Semiconductors
- 功能描述
10A,90V,TRENCH SKY RECT.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SIRECT |
22+23+ |
TO-220F |
8000 |
新到现货，只做原装进口 |
|||
SIRECT |
23+ |
TO-220F |
8560 |
受权代理!全新原装现货特价热卖! |
|||
GI |
24+ |
TO220-2 |
5000 |
全现原装公司现货 |
|||
TSC |
17+ |
TO-220 |
6200 |
||||
SIRECT |
15+ |
TO-220F |
4000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
22+ |
TO263 |
6000 |
终端可免费供样,支持BOM配单 |
|||
ON |
24+ |
TO-2203LEADSTANDA |
8866 |
||||
LT |
16+ |
TO-220 |
8000 |
原装现货请来电咨询 |
|||
SIRECT |
24+ |
NA/ |
3345 |
原装现货,当天可交货,原型号开票 |
|||
SIRECT |
24+ |
TO-220F |
5000 |
全新原装正品,现货销售 |
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MBR1090-M3规格书下载地址
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2019-2-25
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