16M (2MX8/1MX16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s

16M (2MX8/1MX16) BIT Dual Operation

16M (2M x 8/1M x 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTD/BD are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTD/BD are offered in a 48-pin TSOP(I) and 48-ball FBGA Package. These devices are designed to be programmed in-system with the standard

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s

16M (2M x 8/1M x 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTD/BD are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTD/BD are offered in a 48-pin TSOP(I) and 48-ball FBGA Package. These devices are designed to be programmed in-system with the standard

16M (2M x 8/1M x 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTD/BD are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTD/BD are offered in a 48-pin TSOP(I) and 48-ball FBGA Package. These devices are designed to be programmed in-system with the standard

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s

FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation

■ GENERAL DESCRIPTION\nThe MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP\n and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard syst • 0.23 µm Process Technology\n• Simultaneous Read/Write operations (dual bank)\n   Multiple devices available with different bank sizes\n   (Refer to “MBM29DL16XTE/BE Device Bank Divisions Table” in ■GENERAL DESCRIPTION)\n   Host system can program or erase in one bank, then immediately and simultan;

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

16M (2M x 8/1M x 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTD/BD are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTD/BD are offered in a 48-pin TSOP(I) and 48-ball FBGA Package. These devices are designed to be programmed in-system with the standard

16M (2M x 8/1M x 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTD/BD are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTD/BD are offered in a 48-pin TSOP(I) and 48-ball FBGA Package. These devices are designed to be programmed in-system with the standard

16M (2MX8/1MX16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s