MB85RS64V价格

参考价格:¥6.9218

型号:MB85RS64VPNF-G-JNERE1 品牌:Fujitsu 备注:这里有MB85RS64V多少钱,2026年最近7天走势,今日出价,今日竞价,MB85RS64V批发/采购报价,MB85RS64V行情走势销售排行榜,MB85RS64V报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MB85RS64V

64 K (8 K X 8) Bit SPI

DESCRIPTION MB85RS64V is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS64V adopts the Serial Peripheral Interface (SPI). T

RAMXEED

富士通

MB85RS64V

64 K (8 K 횞 8) ?볝긿?늆PI

文件:301.89 Kbytes Page:32 Pages

Fujitsu

富士通

MB85RS64V

SPI FeRAM系列

ETC

知名厂家

MB85RS64V

FeRAM - SPI接口 (一般用途)

Fujitsu

富士通

64 K (8 K x 8) Bit SPI

DESCRIPTION MB85RS64 is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS64 adopts the Serial Peripheral Interface (SPI). The

RAMXEED

富士通

64 K (8 K횞8) ?볝긿?늆PI

文件:295.64 Kbytes Page:32 Pages

Fujitsu

富士通

64 K (8 K X 8) Bit SPI

DESCRIPTION MB85RS64V is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS64V adopts the Serial Peripheral Interface (SPI). T

RAMXEED

富士通

64 K (8 K X 8) Bit SPI

DESCRIPTION MB85RS64V is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS64V adopts the Serial Peripheral Interface (SPI). T

RAMXEED

富士通

64 K (8 K X 8) Bit SPI

DESCRIPTION MB85RS64V is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS64V adopts the Serial Peripheral Interface (SPI). T

RAMXEED

富士通

64 K (8 K X 8) Bit SPI

DESCRIPTION MB85RS64V is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS64V adopts the Serial Peripheral Interface (SPI). T

RAMXEED

富士通

64K (8K X 8) Bit SPI

DESCRIPTION MB85RS64VY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature

RAMXEED

富士通

64K (8K X 8) Bit SPI

DESCRIPTION MB85RS64VY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature

RAMXEED

富士通

64K (8K X 8) Bit SPI

DESCRIPTION MB85RS64VY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature

RAMXEED

富士通

64K (8K X 8) Bit SPI

DESCRIPTION MB85RS64VY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature

RAMXEED

富士通

64K (8K X 8) Bit SPI

DESCRIPTION MB85RS64VY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature

RAMXEED

富士通

FeRAM Product List

Fujitsu

富士通

封装/外壳:8-WFDFN 裸露焊盘 包装:散装 描述:64KBIT FRAM WITH SPI 2.7V~5.5V - 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:8-WFDFN 裸露焊盘 包装:散装 描述:64KBIT FRAM WITH SPI 2.7V~5.5V - 集成电路(IC) 存储器

ETC

知名厂家

64 K (8 K x 8) Bit SPI

DESCRIPTION MB85RS64T is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS64T adopts the Serial Peripheral Interface (SPI). The

RAMXEED

富士通

Memory FRAM 64 K (8 K x 8) Bit SPI

文件:224.73 Kbytes Page:20 Pages

Fujitsu

富士通

MB85RS64V产品属性

  • 类型

    描述

  • 型号

    MB85RS64V

  • 制造商

    FUJITSU

  • 制造商全称

    Fujitsu Component Limited.

  • 功能描述

    64 K(8 K ?? 8) ?????????SPI

更新时间:2026-1-5 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FUJITSU
2016+
SOP-8
8880
只做原装,假一罚十,公司可开17%增值税发票!
FUJITSU
21+
SOP
19958
一级代理,专注军工、汽车、医疗、工业、新能源、电力
FUJITSU/富士通
25+
8-SOP
32360
FUJITSU/富士通全新特价MB85RS64VPNF-G-JNERE1即刻询购立享优惠#长期有货
FUJITSU/富士通
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
Ramxeed
24+
SOP-8
5000
原厂原装,价格优势,欢迎洽谈!
FUJITSU
25+
SOP-8
4500
公司优势品牌:EXAR 西伯斯/SMSC 半磁半导体/ MAXIM 美国美信/TI/BB德州仪/器STC宏晶科技/ATMEL爱特梅尔 SONIX松翰NXP恩智浦ST意法半导体FTDI /SILICON /ICPLUS/JRC
NA
23+
NA
26094
10年以上分销经验原装进口正品,做服务型企业
Fujitsu Semiconductor
25+
8-SOIC(0.154 3.90mm 宽)
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
FUJITSU/富士通
25+
SOP-8
15000
只做进口原装假一罚百
FUJITSU(富士通)
26+
SOIC-8_150mil
10000
只有原装,一站式BOM配单

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