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MB85RS256价格
参考价格：￥17.6985
型号：MB85RS256APNF-G-JNE1 品牌：FME 备注：这里有MB85RS256多少钱，2025年最近7天走势，今日出价，今日竞价，MB85RS256批发/采购报价，MB85RS256行情走势销售排行榜，MB85RS256报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MB85RS256 | Memory FRAM CMOS 256 K (32 K 횞 8) Bit SPI 文件：123.94 Kbytes Page：20 Pages | Fujitsu 富士通 |   | |
MB85RS256 | Memory FRAM CMOS 256 K (32 K 횞 8) Bit SPI 文件：273.45 Kbytes Page：19 Pages | Fujitsu 富士通 | | |
256 K (32 K X 8) Bit SPI DESCRIPTION MB85RS256B is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS256B adopts the Serial Peripheral Interface (SPI). | RAMXEED 富士通 | | ||
256 K (32 K X 8) Bit SPI DESCRIPTION MB85RS256B is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS256B adopts the Serial Peripheral Interface (SPI). | RAMXEED 富士通 | | ||
256 K (32 K X 8) Bit SPI DESCRIPTION MB85RS256B is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS256B adopts the Serial Peripheral Interface (SPI). | RAMXEED 富士通 | | ||
256 K (32 K X 8) Bit SPI DESCRIPTION MB85RS256B is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS256B adopts the Serial Peripheral Interface (SPI). | RAMXEED 富士通 | | ||
256 K (32 K X 8) Bit SPI DESCRIPTION MB85RS256B is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS256B adopts the Serial Peripheral Interface (SPI). | RAMXEED 富士通 | | ||
256K (32K X 8) Bit SPI DESCRIPTION MB85RS256LYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperat | RAMXEED 富士通 | | ||
256K (32K X 8) Bit SPI DESCRIPTION MB85RS256LYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperat | RAMXEED 富士通 | | ||
256K (32K X 8) Bit SPI DESCRIPTION MB85RS256LYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperat | RAMXEED 富士通 | | ||
256K (32K X 8) Bit SPI DESCRIPTION MB85RS256LYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperat | RAMXEED 富士通 | | ||
256K (32K X 8) Bit SPI DESCRIPTION MB85RS256LYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperat | RAMXEED 富士通 | | ||
256K (32 K X 8) Bit SPI DESCRIPTION MB85RS256TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu | RAMXEED 富士通 | | ||
256K (32K X 8) Bit SPI DESCRIPTION MB85RS256TYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperat | RAMXEED 富士通 | | ||
256K (32K X 8) Bit SPI DESCRIPTION MB85RS256TYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperat | RAMXEED 富士通 | | ||
256K (32K X 8) Bit SPI DESCRIPTION MB85RS256TYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperat | RAMXEED 富士通 | | ||
256K (32K X 8) Bit SPI DESCRIPTION MB85RS256TYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperat | RAMXEED 富士通 | | ||
256K (32K X 8) Bit SPI DESCRIPTION MB85RS256TYA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperat | RAMXEED 富士通 | | ||
256K (32 K X 8) Bit SPI DESCRIPTION MB85RS256TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu | RAMXEED 富士通 | | ||
256K (32 K X 8) Bit SPI DESCRIPTION MB85RS256TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu | RAMXEED 富士通 | | ||
256K (32 K X 8) Bit SPI DESCRIPTION MB85RS256TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu | RAMXEED 富士通 | | ||
256K (32 K X 8) Bit SPI DESCRIPTION MB85RS256TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu | RAMXEED 富士通 | | ||
Memory FRAM CMOS 256 K (32 K 횞 8) Bit SPI 文件：123.94 Kbytes Page：20 Pages | Fujitsu 富士通 | | ||
Memory FRAM 256 K (32 K x 8) Bit SPI 文件：224.69 Kbytes Page：20 Pages | Fujitsu 富士通 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC FRAM 256KBIT SPI 25MHZ 8SOP 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
FeRAM - SPI接口 (一般用途) | Fujitsu 富士通 | | ||
256 K (32 K횞8) ?볝긿?늆PI 文件：303.96 Kbytes Page：32 Pages | Fujitsu 富士通 | | ||
256 K (32 K 횞 8) Bit SPI 文件：314.36 Kbytes Page：28 Pages | Fujitsu 富士通 | | ||
256 K (32 K 횞 8) Bit SPI 文件：314.36 Kbytes Page：28 Pages | Fujitsu 富士通 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：托盘 描述：IC FRAM 256KBIT SPI 33MHZ 8SOP 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
256 K (32 K 횞 8) Bit SPI 文件：314.36 Kbytes Page：28 Pages | Fujitsu 富士通 | | ||
FeRAM Product List | Fujitsu 富士通 | | ||
Memory FRAM CMOS 256 K (32 K 횞 8) Bit SPI 文件：273.45 Kbytes Page：19 Pages | Fujitsu 富士通 | | ||
Memory FRAM CMOS 256 K (32 K 횞 8) Bit SPI 文件：123.94 Kbytes Page：20 Pages | Fujitsu 富士通 | | ||
Memory FRAM CMOS 256 K (32 K 횞 8) Bit SPI 文件：123.94 Kbytes Page：20 Pages | Fujitsu 富士通 | | ||
FeRAM Product List | Fujitsu 富士通 | |
MB85RS256产品属性
- 类型
描述
- 型号
MB85RS256
- 制造商
FUJITSU
- 制造商全称
Fujitsu Component Limited.
- 功能描述
Memory FRAM CMOS 256 K(32 K 】 8) Bit SPI
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FUJITSU/富士通 |
24+ |
SOP-8 |
9600 |
原装现货,优势供应,支持实单! |
|||
FUJITSU |
18+ |
SOP8 |
85600 |
保证进口原装可开17%增值税发票 |
|||
FUJITSU/富士通 |
25+ |
SOP-8 |
15000 |
只做进口原装假一罚百 |
|||
FUJITSU/富士通 |
23+ |
SOP-8 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FUJITSU |
1728+ |
SOP |
7500 |
只做原装进口,假一罚十 |
|||
Fujitsu(富士通) |
2526+ |
SOIC-8 |
3000 |
全新、原装 |
|||
Fujitsu(富士通) |
24+ |
SOIC-8_150mil |
42048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
FUJITSU MICROELECTRONICS ASIA |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
Fujitsu(富士通) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
FUJITSU/富士通 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
MB85RS256规格书下载地址
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