16 K (2 K x 8) Bit I2C

 DESCRIPTION The MB85RC16V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data w

16 K (2 K횞8) ?볝긿?뉹2C

文件：295.31 Kbytes Page：32 Pages

FeRAM (I2C接口)

16 K (2 K x 8) Bit I2C

 DESCRIPTION The MB85RC16V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data w

16 K (2 K x 8) Bit I2C

 DESCRIPTION The MB85RC16V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data w

16 K (2 K x 8) Bit I2C

 DESCRIPTION The MB85RC16V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data w

16 K (2 K x 8) Bit I2C

 DESCRIPTION The MB85RC16V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data w

16 K (2 K x 8) Bit I2C

 DESCRIPTION The MB85RC16V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data w

16 K (2 K x 8) Bit I2C

 DESCRIPTION The MB85RC16V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data w

16 K (2 K 횞 8) Bit I2C

文件：306.54 Kbytes Page：29 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：散装 描述：16KBIT FRAM WITH I2C SERIAL INTE 集成电路（IC） 存储器

16 K (2 K 횞 8) Bit I2C

文件：306.54 Kbytes Page：29 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：散装 描述：IC FRAM 16KBIT I2C 1MHZ 8SOP 集成电路（IC） 存储器

16 K (2 K 횞 8) Bit I2C

文件：306.54 Kbytes Page：29 Pages

16 K (2 K 횞 8) Bit I2C

文件：306.54 Kbytes Page：29 Pages

16 K (2 K 횞 8) Bit I2C

文件：306.54 Kbytes Page：29 Pages

16 K (2 K x 8) Bit I2C

 DESCRIPTION The MB85RC16 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16 is able to retain data wit

Memory FRAM 16 K (2 K x 8) Bit I2C

文件：138.42 Kbytes Page：20 Pages