DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ■30V,7A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■-30V,-6.2A,RDS(ON)=33mΩ@VGS=-10V. RDS(ON)=52mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability.

DualEnhancementModeFieldEffectTransistor

N-channel:VOLTAGE30VoltsCURRENT7Ampere P-channel:VOLTAGE30VoltsCURRENT6.2Ampere FEATURE ​​​​​​​*Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Ser

Multi-purposeThree-PhaseBLDCPredriver

Overview TheLV8968BBisamulti−purposethree−phaseBLDCpredriverfor automotiveapplicationsanddevelopedincompliancewithISO 26262.This3−phaseperipheralpredriveroffersaBEMF(Back ElectroMotiveForce)outputandthewideoperatingvoltagerangeand AEC−Q100qualificationmaketh

50VCERAMICDISC

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