Current-Limited, High-Side P-Channel Switches with Thermal Shutdown

General Description The MAX891L/MAX892L smart, low-voltage, P-channel, MOSFET power switches are intended for high-side load-switching applications. These switches operate with inputs from 2.7V to 5.5V, making them ideal for both 3V and 5V systems. Internal current-limiting circuitry protects t

2A, Current-Limited, High-Side P-Channel Switch with Thermal Shutdown

General Description The MAX869L P-channel load switch features an accurate user-set current limit and low on-resistance. This switch is designed to protect your power source from shorts and surges by limiting current and preventing the system supply from being pulled low. The input voltage rang

限流型、高边P沟道开关，带有热关断

MAX891L/MAX892L智能、低电压、P沟道、MOSFET电源开关适用于高端负载开关应用。这些开关在2.7V至5.5V的输入范围内工作，因此非常适合用于3V和5V系统。内部限流电路可保护输入电源，使其免受过载的影响。热过载保护可限制功耗和结温。\n\n MAX891L/MAX892L的最大限流值分别为500mA和250mA。经过开关的限流值通过SET与地之间的电阻进行编程。开关接通时的静态电源电流低至13µA。开关关断的静态电流降至0.1µA。\n\n MAX891L/MAX892L采用8引脚µMAX®封装。\n\n   • 仅1.11mm高的超小型µMAX封装\n\n• 输入范围：2.7V至5.5V\n\n• 可编程电流限值\n\n• VIN = 3.3V时的静态电流低至13µA，关断时为0.1µA\n\n• 热关断\n\n• 反FAULT指示器输出\n\n• 导通电阻：\n\n• 0.12Ω (MAX891L)\n\n• 0.25Ω (MAX892L);

Current-Limited, High-Side P-Channel Switches with Thermal Shutdown

General Description The MAX891L/MAX892L smart, low-voltage, P-channel, MOSFET power switches are intended for high-side load-switching applications. These switches operate with inputs from 2.7V to 5.5V, making them ideal for both 3V and 5V systems. Internal current-limiting circuitry protects t

Current-Limited, High-Side P-Channel Switches with Thermal Shutdown

General Description The MAX891L/MAX892L smart, low-voltage, P-channel, MOSFET power switches are intended for high-side load-switching applications. These switches operate with inputs from 2.7V to 5.5V, making them ideal for both 3V and 5V systems. Internal current-limiting circuitry protects t

包装：散装 描述：IC CCD CLOCK DRIVER WLP 集成电路（IC） 应用特定时钟/定时

包装：卷带（TR） 描述：IC DRIVER CCD VERTICAL 40TQFN 集成电路（IC） 视频处理

IC DRIVER CCD VERTICAL 40TQFN

IC DRIVER CCD VERTICAL TQFN

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed for 24 volt UHF large–signal, common–emitter amplifier applications in industrial and commercial FM equipment operating in the range of 800–960 MHz. • Specified 24 Volt, 900 MHz Characteristics Output Power = 5.0 Watts Power Ga

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed for 24 volt UHF large–signal, common–emitter amplifier applications in industrial and commercial FM equipment operating in the range of 800–960 MHz. • Specified 24 Volt, 900 MHz Characteristics Output Power = 5.0 Watts Power Ga

Integrated Circuit Dual Audio Operational Amplifier

Description: The NTE891M and NTE891SM are dual general purpose operational amplifiers designed with particular emphasis on performance in audio systems. Thiese devices deliver low noise, high speed and wide bandwidth without increasing external components for all closed loop gains and is therefor

Integrated Circuit Dual Audio Operational Amplifier

Description: The NTE891M and NTE891SM are dual general purpose operational amplifiers designed with particular emphasis on performance in audio systems. Thiese devices deliver low noise, high speed and wide bandwidth without increasing external components for all closed loop gains and is therefor

Integrated Circuit Dual Audio Operational Amplifier

Description: The NTE891M and NTE891SM are dual general purpose operational amplifiers designed with particular emphasis on performance in audio systems. Thiese devices deliver low noise, high speed and wide bandwidth without increasing external components for all closed loop gains and is therefor