3V Voltage Monitoring, Low-Cost, 關P Supervisory Circuits

General Description The MAX705–MAX708/MAX813L microprocessor (µP) supervisory circuits reduce the complexity and number of components required to monitor power-supply and battery functions in µP systems. These devices signifcantly improve system reliability and accuracy compared to separate ICs o

监视+3V电压、低成本、微处理器监控电路

MAX706P/R/S/T、MAX706AP/AR/AS/AT和MAX708R/S/T微处理器(µP)监控电路减少了监控5V µP系统中的+3V至+3V电源电平所需的复杂性和元件数量。与单独的IC或分立元件相比，这些器件显著提高了系统的可靠性和准确性。\n\n MAX706P/R/S/T和MAX706AP/AR/AS/AT监控电路提供以下四个功能：\n\n 1) 启动、关断和掉电情况下的复位输出。 2) 如果看门狗输入在1.6秒内未触发，则独立看门狗输出会变为低电平。 3) 1.25V阈值检测器，用于电源故障警告、低电池电量检测或用于监控主电源以外的电源。 4 • µMAX封装，小型8引脚SO封装\n\n• 精密电源电压监控器\n• 2.63V（MAX706P/R、MAX706AP/AR和MAX708R）\n\n• 2.93V（MAX706S、MAX706AS和MAX708S）\n\n• 3.08V（MAX706T、MAX706AT和MAX708T）\n\n\n\n\n• 复位时间延迟：200ms\n\n• 去抖TTL/CMOS兼容手动复位输入\n\n• 静态电流：100µA\n\n• WDI禁用特性(MAX706AP/AR/AS/AT)\n\n• 看门狗定时器：1.6s超时\n\n• 复位输出信号：\n• 仅高电平有效（MAX706P、MAX706;

3V Voltage Monitoring, Low-Cost uP Supervisory Circuits

文件：465.81 Kbytes Page：15 Pages

3V Voltage Monitoring, Low-Cost, 關P Supervisory Circuits

General Description The MAX705–MAX708/MAX813L microprocessor (µP) supervisory circuits reduce the complexity and number of components required to monitor power-supply and battery functions in µP systems. These devices signifcantly improve system reliability and accuracy compared to separate ICs o

3V Voltage Monitoring, Low-Cost, 關P Supervisory Circuits

General Description The MAX705–MAX708/MAX813L microprocessor (µP) supervisory circuits reduce the complexity and number of components required to monitor power-supply and battery functions in µP systems. These devices signifcantly improve system reliability and accuracy compared to separate ICs o

3V Voltage Monitoring, Low-Cost, 關P Supervisory Circuits

General Description The MAX705–MAX708/MAX813L microprocessor (µP) supervisory circuits reduce the complexity and number of components required to monitor power-supply and battery functions in µP systems. These devices signifcantly improve system reliability and accuracy compared to separate ICs o

3V Voltage Monitoring, Low-Cost, 關P Supervisory Circuits

General Description The MAX705–MAX708/MAX813L microprocessor (µP) supervisory circuits reduce the complexity and number of components required to monitor power-supply and battery functions in µP systems. These devices signifcantly improve system reliability and accuracy compared to separate ICs o

3V Voltage Monitoring, Low-Cost, 關P Supervisory Circuits

General Description The MAX705–MAX708/MAX813L microprocessor (µP) supervisory circuits reduce the complexity and number of components required to monitor power-supply and battery functions in µP systems. These devices signifcantly improve system reliability and accuracy compared to separate ICs o

3V Voltage Monitoring, Low-Cost, 關P Supervisory Circuits

General Description The MAX705–MAX708/MAX813L microprocessor (µP) supervisory circuits reduce the complexity and number of components required to monitor power-supply and battery functions in µP systems. These devices signifcantly improve system reliability and accuracy compared to separate ICs o

3V Voltage Monitoring, Low-Cost uP Supervisory Circuits

文件：465.81 Kbytes Page：15 Pages

3V Voltage Monitoring, Low-Cost uP Supervisory Circuits

文件：465.81 Kbytes Page：15 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC SUPERVISOR 1 CHANNEL 8SOIC 集成电路（IC） 监控器

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC SUPERVISOR 1 CHANNEL 8SOIC 集成电路（IC） 监控器

3V Voltage Monitoring, Low-Cost uP Supervisory Circuits

文件：465.81 Kbytes Page：15 Pages

3V Voltage Monitoring, Low-Cost uP Supervisory Circuits

文件：465.81 Kbytes Page：15 Pages

3V Voltage Monitoring, Low-Cost uP Supervisory Circuits

文件：465.81 Kbytes Page：15 Pages

3V Voltage Monitoring, Low-Cost uP Supervisory Circuits

文件：465.81 Kbytes Page：15 Pages

3V Voltage Monitoring, Low-Cost uP Supervisory Circuits

文件：465.81 Kbytes Page：15 Pages

High Voltage Input Amplifier Circuit for Hi-Fi Power Amplifier

■ Overview The AN7062N is a high voltage integrated circuit designed for pre-driver of 60W-class Hi-Fi audio amp. Stereo operation is enabled due to two amplifiers built-in. ■ Features • High voltage • Low noise : Vni = 2.5µV (typ.) • Low distortion : THD = 0.003 (typ.) • Good channel separa

PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR Repetitive voltage up to 800 V Mean on-state current 4305 A Surge current 70 kA

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu