包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MAX3374EEKA 集成电路（IC） 转换器，电平移位器

짹15kV ESD-Protected, 1關A, 16Mbps, Dual/Quad Low-Voltage Level Translators in UCSP

General Description The MAX3372E–MAX3379E and MAX3390E–MAX3393E ±15kV ESD-protected level translators provide the level shifting necessary to allow data transfer in a multivoltage system. Externally applied voltages, VCCand VL, set the logic levels on either side of the device. A low-voltage

±15kV ESD-Protected, 1μA, 16Mbps, Dual/Quad Low-Voltage Level Translators in UCSP

文件：490.06 Kbytes Page：31 Pages

짹15kV ESD-Protected, 1關A, 16Mbps, Dual/Quad Low-Voltage Level Translators in UCSP

文件：3.00895 Mbytes Page：26 Pages

±15kV ESD-Protected, 1uA, 16Mbps, Dual Quad Low-Voltage Level Translators in UCSP

文件：357.68 Kbytes Page：26 Pages

±15kV ESD-Protected, 1uA, 16Mbps, Dual Quad Low-Voltage Level Translators in UCSP

文件：357.68 Kbytes Page：26 Pages

封装/外壳：SOT-23-8 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：A+/-15KV ESD-PROTECTED, 1AUA, 16 集成电路（IC） 转换器，电平移位器

짹15kV ESD-Protected, 1關A, 16Mbps, Dual/Quad Low-Voltage Level Translators in UCSP

General Description The MAX3372E–MAX3379E and MAX3390E–MAX3393E ±15kV ESD-protected level translators provide the level shifting necessary to allow data transfer in a multivoltage system. Externally applied voltages, VCCand VL, set the logic levels on either side of the device. A low-voltage

짹15kV ESD-Protected, 1關A, 16Mbps, Dual/Quad Low-Voltage Level Translators in UCSP

General Description The MAX3372E–MAX3379E and MAX3390E–MAX3393E ±15kV ESD-protected level translators provide the level shifting necessary to allow data transfer in a multivoltage system. Externally applied voltages, VCCand VL, set the logic levels on either side of the device. A low-voltage

Radiation Hardened 8-Bit Bidirectional CMOS/TTL Level Converter

The Intersil HS-3374RH is a radiation hardened 8-bit bidirectional level converter designed to interface CMOS logic levels with TTL logic levels in radiation hardened bus oriented systems. The HS-3374RH is fabricated using a radiation hardened EPI-CMOS process and features eight parallel bidirecti

GaAlAs Infrared Emitting Diodes

文件：29.91 Kbytes Page：1 Pages