4A Sink /Source Current, 12ns, Dual MOSFET Drivers

General Description The MAX17600–MAX17605 devices are high-speed MOSFET drivers capable of sinking /sourcing 4A peak currents. The devices have various inverting and noninverting part options that provide greater flexibility in controlling the MOSFET. The devices have internal logic circuitry tha

4A可吸入/源出电流的12ns、双通道MOSFET驱动器

MAX17600–MAX17605为高速MOSFET驱动器，可吸入/源出4A峰值电流，提供不同的反相输出和同相输出器件，灵活用于MOSFET驱动。器件内部的逻辑电路防止输出状态变化时的穿通现象。逻辑输入端提供高达+14V的尖峰电压保护，与VDD电压无关。器件具有极低的传输延迟时间，并保持两个通道之间的传输延时匹配。器件提供快速切换，结合极短的传输延时(典型值12ns)，使其非常适合高频电路设计。器件采用+4V至+14V单电源供电，典型电流损耗为1mA。MAX17600/MAX17601采用标准的TTL输入逻辑电平，MAX17603/MAX17604/MAX17605则采用具有较高噪声容限(HN • 带有使能控制的双通道驱动器\n• 4A吸入/源出峰值电流\n• 12ns超低传输延时\n• 通道之间提供严格的延时匹配\n• TTL或具有噪声抑制的HNM逻辑电平输入 \n• 热关断保护\n• -40°C至+125°C工作温度范围;

4A Sink/Source Current, 12ns, Dual MOSFET Drivers

文件：1.23705 Mbytes Page：13 Pages

4A Sink /Source Current, 12ns, Dual MOSFET Drivers

General Description The MAX17600–MAX17605 devices are high-speed MOSFET drivers capable of sinking /sourcing 4A peak currents. The devices have various inverting and noninverting part options that provide greater flexibility in controlling the MOSFET. The devices have internal logic circuitry tha

4A Sink /Source Current, 12ns, Dual MOSFET Drivers

General Description The MAX17600–MAX17605 devices are high-speed MOSFET drivers capable of sinking /sourcing 4A peak currents. The devices have various inverting and noninverting part options that provide greater flexibility in controlling the MOSFET. The devices have internal logic circuitry tha

4A Sink /Source Current, 12ns, Dual MOSFET Drivers

General Description The MAX17600–MAX17605 devices are high-speed MOSFET drivers capable of sinking /sourcing 4A peak currents. The devices have various inverting and noninverting part options that provide greater flexibility in controlling the MOSFET. The devices have internal logic circuitry tha

4V to 14V Input Range

General Description The MAX17600–MAX17605 evaluation kits (EV kits) provide a proven design to evaluate the MAX17600–MAX17605 dual, high-speed, low-side MOSFET drivers that can source/sink up to a 4A peak current. Each EV kit provides four separate designs to evaluate four different IC packages.

4A Sink/Source Current, 12ns, Dual MOSFET Drivers

文件：1.23705 Mbytes Page：13 Pages

4A Sink/Source Current, 12ns, Dual MOSFET Drivers

文件：1.23705 Mbytes Page：13 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE DRVR LOW-SIDE 8SOIC 集成电路（IC） 栅极驱动器

4A Sink/Source Current, 12ns, Dual MOSFET Drivers

文件：1.23705 Mbytes Page：13 Pages

封装/外壳：8-WDFN 裸露焊盘 包装：管件 描述：IC MOSFET DRVR 4A DUAL 8TDFN 集成电路（IC） 栅极驱动器

4A Sink/Source Current, 12ns, Dual MOSFET Drivers

文件：1.23705 Mbytes Page：13 Pages

Complementary MOSFET

文件：140.99 Kbytes Page：7 Pages

1000BASE-T MAGNETICS MODULES

文件：28.32 Kbytes Page：1 Pages