Matched Monolithic Dual Transistor

GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°

Matched Monolithic Dual Transistor

GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°

Matched Monolithic Dual Transistor

FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C

匹配单芯片双通道晶体管

MAT01是一款单芯片双通道NPN晶体管。专有的氮化硅“三重钝化”工艺使器件的关键参数在温度和时间范围内具有出色的稳定性。匹配特性包括失调电压40µV、温度漂移0.15µV/°C及hFE匹配为0.7%。 该器件通过60倍范围的集电极电流提供极高的h，包括在集电极电流仅为10nA的情况下具有出色的hFE 值590。该器件能够在较低集电极电流的情况下提供高增益，适合在低功耗、低电平输入级中使用。 • 低VOS（VBE匹配）： 40 μV（典型值）；100 μV（最大值） \n\n• 低TCVOS： 0.5 μV/°C（最大值） \n\n• 高hFE： 500（最小值）;

Matched Monolithic Dual Transistor

FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C

Matched Monolithic Dual Transistor

FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C

Matched Monolithic Dual Transistor

GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°

Matched Monolithic Dual Transistor

FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C

Matched Monolithic Dual Transistor

GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°

Matched Monolithic Dual Transistor

FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C

Matched Monolithic Dual Transistor

GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°

Matched Monolithic Dual Transistor

FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C

Matched Monolithic Dual Transistor

GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°

Matched Monolithic Dual Transistor

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封装/外壳：TO-78-6 金属罐 包装：卷带（TR） 描述：TRANS 2NPN 45V 0.025A TO78-6 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

封装/外壳：TO-78-6 金属罐 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS 2NPN 45V 0.025A TO78-6 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列