TO-5 HIGH-PERFORMANCE RELAYS

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Special Fuse, 14 x 50 mm

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Matched Monolithic Dual Transistor

GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°

Matched Monolithic Dual Transistor

GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°

Matched Monolithic Dual Transistor

FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C

Matched Monolithic Dual Transistor

FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C

Matched Monolithic Dual Transistor

GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°

Matched Monolithic Dual Transistor

FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C

Matched Monolithic Dual Transistor

FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C

Matched Monolithic Dual Transistor

GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°

Matched Monolithic Dual Transistor

FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C

Matched Monolithic Dual Transistor

GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°

Matched Monolithic Dual Transistor

FEATURES Low VOS (VBE match): 40 μV typical, 100 μV maximum Low TCVOS: 0.5 μV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 μV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end C

Matched Monolithic Dual Transistor

GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°

Low Noise, Matched Dual Monolithic Transistor

PRODUCT DESCRIPTION The design of the MAT02 series of NPN dual monolithic transistors is optimized for very low noise, low drift and low rBE. Precision Monolithics’ exclusive Silicon Nitride “Triple Passivation” process stabilizes the critical device parameters over wide ranges of temperature a

Low Noise, Matched Dual Monolithic Transistor

PRODUCT DESCRIPTION The design of the MAT02 series of NPN dual monolithic transistors is optimized for very low noise, low drift and low rBE. Precision Monolithics’ exclusive Silicon Nitride “Triple Passivation” process stabilizes the critical device parameters over wide ranges of temperature a

Low Noise, Matched Dual Monolithic Transistor

PRODUCT DESCRIPTION The design of the MAT02 series of NPN dual monolithic transistors is optimized for very low noise, low drift and low rBE. Precision Monolithics’ exclusive Silicon Nitride “Triple Passivation” process stabilizes the critical device parameters over wide ranges of temperature a

Low Noise, Matched Dual Monolithic Transistor

PRODUCT DESCRIPTION The design of the MAT02 series of NPN dual monolithic transistors is optimized for very low noise, low drift and low rBE. Precision Monolithics’ exclusive Silicon Nitride “Triple Passivation” process stabilizes the critical device parameters over wide ranges of temperature a

Low Noise, Matched Dual PNP Transistor

GENERAL DESCRIPTION The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1 nV/√Hz max @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the MAT03 an excellent choice for dema

Low Noise, Matched Dual PNP Transistor

GENERAL DESCRIPTION The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1 nV/√Hz max @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the MAT03 an excellent choice for dema

Low Noise, Matched Dual PNP Transistor

GENERAL DESCRIPTION The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1 nV/√Hz max @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the MAT03 an excellent choice for dema

Low Noise, Matched Dual PNP Transistor

GENERAL DESCRIPTION The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1 nV/√Hz max @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the MAT03 an excellent choice for dema

Matched Monolithic Quad Transistor

PRODUCT DESCRIPTION The MAT04 is a quad monolithic NPN transistor that offers excellent parametric matching for precision amplifier and nonlinear circuit applications. Performance characteristics of the MAT04 include high gain (400 minimum) over a wide range of collector current, low noise (2.5

Matched Monolithic Quad Transistor

PRODUCT DESCRIPTION The MAT04 is a quad monolithic NPN transistor that offers excellent parametric matching for precision amplifier and nonlinear circuit applications. Performance characteristics of the MAT04 include high gain (400 minimum) over a wide range of collector current, low noise (2.5

Matched Monolithic Quad Transistor

FEATURES • Low Offset Voltage ----------------------- 200μV max • High Current Gain -------------------------400 min • Excellent Current Gain Match ------------- 2 max • Low Noise Voltage at 100 Hz, 1 mA ---------2.5 nV/√Hz max • Excellent Log Conformance ---------------- rBE = 0.6

Matched Monolithic Quad Transistor

FEATURES • Low Offset Voltage ----------------------- 200μV max • High Current Gain -------------------------400 min • Excellent Current Gain Match ------------- 2 max • Low Noise Voltage at 100 Hz, 1 mA ---------2.5 nV/√Hz max • Excellent Log Conformance ---------------- rBE = 0.6

Matched Monolithic Quad Transistor

FEATURES • Low Offset Voltage ----------------------- 200μV max • High Current Gain -------------------------400 min • Excellent Current Gain Match ------------- 2 max • Low Noise Voltage at 100 Hz, 1 mA ---------2.5 nV/√Hz max • Excellent Log Conformance ---------------- rBE = 0.6

Matched Monolithic Quad Transistor

FEATURES • Low Offset Voltage ----------------------- 200μV max • High Current Gain -------------------------400 min • Excellent Current Gain Match ------------- 2 max • Low Noise Voltage at 100 Hz, 1 mA ---------2.5 nV/√Hz max • Excellent Log Conformance ---------------- rBE = 0.6

Matched Monolithic Quad Transistor

FEATURES • Low Offset Voltage ----------------------- 200μV max • High Current Gain -------------------------400 min • Excellent Current Gain Match ------------- 2 max • Low Noise Voltage at 100 Hz, 1 mA ---------2.5 nV/√Hz max • Excellent Log Conformance ---------------- rBE = 0.6

Matched Monolithic Quad Transistor

FEATURES • Low Offset Voltage ----------------------- 200μV max • High Current Gain -------------------------400 min • Excellent Current Gain Match ------------- 2 max • Low Noise Voltage at 100 Hz, 1 mA ---------2.5 nV/√Hz max • Excellent Log Conformance ---------------- rBE = 0.6

Matched Monolithic Quad Transistor

PRODUCT DESCRIPTION The MAT04 is a quad monolithic NPN transistor that offers excellent parametric matching for precision amplifier and nonlinear circuit applications. Performance characteristics of the MAT04 include high gain (400 minimum) over a wide range of collector current, low noise (2.5

Matched Monolithic Quad Transistor

PRODUCT DESCRIPTION The MAT04 is a quad monolithic NPN transistor that offers excellent parametric matching for precision amplifier and nonlinear circuit applications. Performance characteristics of the MAT04 include high gain (400 minimum) over a wide range of collector current, low noise (2.5

Matched Monolithic Quad Transistor

FEATURES • Low Offset Voltage ----------------------- 200μV max • High Current Gain -------------------------400 min • Excellent Current Gain Match ------------- 2 max • Low Noise Voltage at 100 Hz, 1 mA ---------2.5 nV/√Hz max • Excellent Log Conformance ---------------- rBE = 0.6

Matched Monolithic Quad Transistor

FEATURES • Low Offset Voltage ----------------------- 200μV max • High Current Gain -------------------------400 min • Excellent Current Gain Match ------------- 2 max • Low Noise Voltage at 100 Hz, 1 mA ---------2.5 nV/√Hz max • Excellent Log Conformance ---------------- rBE = 0.6

Matched Monolithic Quad Transistor

PRODUCT DESCRIPTION The MAT04 is a quad monolithic NPN transistor that offers excellent parametric matching for precision amplifier and nonlinear circuit applications. Performance characteristics of the MAT04 include high gain (400 minimum) over a wide range of collector current, low noise (2.5

Matched Monolithic Quad Transistor

PRODUCT DESCRIPTION The MAT04 is a quad monolithic NPN transistor that offers excellent parametric matching for precision amplifier and nonlinear circuit applications. Performance characteristics of the MAT04 include high gain (400 minimum) over a wide range of collector current, low noise (2.5

Matched Monolithic Quad Transistor

FEATURES • Low Offset Voltage ----------------------- 200μV max • High Current Gain -------------------------400 min • Excellent Current Gain Match ------------- 2 max • Low Noise Voltage at 100 Hz, 1 mA ---------2.5 nV/√Hz max • Excellent Log Conformance ---------------- rBE = 0.6

Matched Monolithic Quad Transistor

PRODUCT DESCRIPTION The MAT04 is a quad monolithic NPN transistor that offers excellent parametric matching for precision amplifier and nonlinear circuit applications. Performance characteristics of the MAT04 include high gain (400 minimum) over a wide range of collector current, low noise (2.5

Matched Monolithic Quad Transistor

PRODUCT DESCRIPTION The MAT04 is a quad monolithic NPN transistor that offers excellent parametric matching for precision amplifier and nonlinear circuit applications. Performance characteristics of the MAT04 include high gain (400 minimum) over a wide range of collector current, low noise (2.5

Matched Monolithic Quad Transistor

FEATURES • Low Offset Voltage ----------------------- 200μV max • High Current Gain -------------------------400 min • Excellent Current Gain Match ------------- 2 max • Low Noise Voltage at 100 Hz, 1 mA ---------2.5 nV/√Hz max • Excellent Log Conformance ---------------- rBE = 0.6

Matched Monolithic Quad Transistor

PRODUCT DESCRIPTION The MAT04 is a quad monolithic NPN transistor that offers excellent parametric matching for precision amplifier and nonlinear circuit applications. Performance characteristics of the MAT04 include high gain (400 minimum) over a wide range of collector current, low noise (2.5

Matched Monolithic Quad Transistor

PRODUCT DESCRIPTION The MAT04 is a quad monolithic NPN transistor that offers excellent parametric matching for precision amplifier and nonlinear circuit applications. Performance characteristics of the MAT04 include high gain (400 minimum) over a wide range of collector current, low noise (2.5

Matched Monolithic Quad Transistor

PRODUCT DESCRIPTION The MAT04 is a quad monolithic NPN transistor that offers excellent parametric matching for precision amplifier and nonlinear circuit applications. Performance characteristics of the MAT04 include high gain (400 minimum) over a wide range of collector current, low noise (2.5

Matched Monolithic Quad Transistor

FEATURES • Low Offset Voltage ----------------------- 200μV max • High Current Gain -------------------------400 min • Excellent Current Gain Match ------------- 2 max • Low Noise Voltage at 100 Hz, 1 mA ---------2.5 nV/√Hz max • Excellent Log Conformance ---------------- rBE = 0.6

Low Noise, Matched Dual Monolithic Transistor

GENERAL DESCRIPTION The MAT12 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 m

Audio, Dual-Matched NPN Transistor

GENERAL DESCRIPTION The MAT12 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 m

Audio, Dual-Matched NPN Transistor

FEATURES Very low voltage noise: 1 nV/√Hz maximum at 100 Hz Excellent current gain match: 0.5% typical Low offset voltage (VOS): 200 μV maximum Outstanding offset voltage drift: 0.03 μV/°C typical High gain bandwidth product: 200 MHz

Audio, Dual-Matched NPN Transistor

FEATURES Very low voltage noise: 1 nV/√Hz maximum at 100 Hz Excellent current gain match: 0.5% typical Low offset voltage (VOS): 200 μV maximum Outstanding offset voltage drift: 0.03 μV/°C typical High gain bandwidth product: 200 MHz

Audio, Dual-Matched NPN Transistor

GENERAL DESCRIPTION The MAT12 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 m

Audio, Dual-Matched NPN Transistor

FEATURES Very low voltage noise: 1 nV/√Hz maximum at 100 Hz Excellent current gain match: 0.5% typical Low offset voltage (VOS): 200 μV maximum Outstanding offset voltage drift: 0.03 μV/°C typical High gain bandwidth product: 200 MHz

Matched Monolithic Quad Transistor

GENERAL DESCRIPTION The MAT14 is a quad monolithic NPN transistor that offers excellent parametric matching for precision amplifier and nonlinear circuit applications. Performance characteristics of the MAT14 include high gain (300 minimum) over a wide range of collector current, low noise (3 n

Matched Monolithic Quad Transistor

GENERAL DESCRIPTION The MAT14 is a quad monolithic NPN transistor that offers excellent parametric matching for precision amplifier and nonlinear circuit applications. Performance characteristics of the MAT14 include high gain (300 minimum) over a wide range of collector current, low noise (3 n

Matched Monolithic Quad Transistor

GENERAL DESCRIPTION The MAT14 is a quad monolithic NPN transistor that offers excellent parametric matching for precision amplifier and nonlinear circuit applications. Performance characteristics of the MAT14 include high gain (300 minimum) over a wide range of collector current, low noise (3 n

Matched Monolithic Quad Transistor

GENERAL DESCRIPTION The MAT14 is a quad monolithic NPN transistor that offers excellent parametric matching for precision amplifier and nonlinear circuit applications. Performance characteristics of the MAT14 include high gain (300 minimum) over a wide range of collector current, low noise (3 n

Dual IRIS Scanner

Features Adjustable Inter Pupillary Distance Supports Windows Operating Systems Compliance to EYE Safety Standards Unaffected by Ambient Lighting Compliant with ANSI NIST & ISO Image Interchange Format Dust & Water Resistant Supports Linux Operating Systems

15*13mm rotary switch, SMD, optional illumination

Slim thickness Optional illumination Momentary push switch integrated RoHS Compliant Product Features

15*13mm rotary switch, SMD, optional illumination

Slim thickness Optional illumination Momentary push switch integrated RoHS Compliant Product Features

15*13mm rotary switch, SMD, optional illumination

Slim thickness Optional illumination Momentary push switch integrated RoHS Compliant Product Features

15*13mm rotary switch, SMD, optional illumination

Slim thickness Optional illumination Momentary push switch integrated RoHS Compliant Product Features

15*13mm rotary switch, SMD, optional illumination

Slim thickness Optional illumination Momentary push switch integrated RoHS Compliant Product Features