Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10關s Pulse, 1 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Avionics Pulsed RF Power Transistor

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic P

Bipolar

·NPN Silicon Microwave Power Transistors\n·Diffused Emitter Ballasting Resistor\n·High efficiency Inter-Digitized Geometry\n·Broadband Class C Operation\n·Common Base Configuration\n·Hermetic Metal/Ceramic Package\n·Internal Input and Output Impedance Matching\n·Gold Metallization System\n·RoHS Comp;

Avionics Pulsed Power Transistor

文件：142.88 Kbytes Page：4 Pages

Avionics Pulsed Power Transistor

文件：142.88 Kbytes Page：4 Pages

Avionics Pulsed Power Transistor

文件：702.85 Kbytes Page：5 Pages

Resistance Transfer Standard System

Features Part-per-million transfers from 100 mW to 1 MW Thermally isolated by oil for maximum short-term stability Excellent long-term stability: ±20 ppm for 6 months Seven decades of resistance transfer: 1, 10, 100, 1k, 10 k, 100 kW /step Resistors within each decade are matched to within 1

Resistance Transfer Standard System

Features Part-per-million transfers from 100 mW to 1 MW Thermally isolated by oil for maximum short-term stability Excellent long-term stability: ±20 ppm for 6 months Seven decades of resistance transfer: 1, 10, 100, 1k, 10 k, 100 kW /step Resistors within each decade are matched to within 1