丝印代码：49A；Ratio-metric Linear Hall Effect Sensor

GENERAL DESCRIPTION MA7910, a linear Hall-effect sensor, is composed of hall sensor, linear amplifier and output stage. The linear Hall sensor have an operating Temperature range of -40°C to +125°C, appropriate for commercial, consumer, and industrial environments. The high sensitivity of Hall

1 550 nm OPTICAL FIBER COMMUNICATIONS EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH APPLICATIONS

DESCRIPTION The NDL7910P is an EA modulator integrated 1 550 nm DFB-LD for 2.5 Gb/s. The newly developed bandgap energy controlled Selective MOVPE technology is utilized as fabrication method. It is designed for 2.5 Gb/s ultralong reach applications. FEATURES • Integrated electroabsorption modu

1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE

DESCRIPTION The NDL7603P Series is a 1310 nm phase-shifted DFB (distributed feedback) laser diode module with single mode fiber. The Multiple Quantum Well (st-MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over a wide temperature range of -40 to +85°C. It

1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE

DESCRIPTION The NX8562LB is a 1 550 nm laser diode with Polarization Maintain Fiber (PMF). This device is designed as CW light source and ideal for transmission systems in which external modulators are used. FEATURES • Output power Pf = 20 mW MIN. • Wavelength selectable for ITU-T standards

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output

1 550 nm OPTICAL FIBER COMMUNICATIONS EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH APPLICATIONS

DESCRIPTION The NDL7910P is an EA modulator integrated 1 550 nm DFB-LD for 2.5 Gb/s. The newly developed bandgap energy controlled Selective MOVPE technology is utilized as fabrication method. It is designed for 2.5 Gb/s ultralong reach applications. FEATURES • Integrated electroabsorption modu