带 ABZ 增量和 PWM 输出的 10 位非接触式数字角度传感器

MA704 检测旋转轴上永磁体（通常为径向磁化圆柱体永磁体）的绝对角度位置。MA704 特别适合跟踪转速高达 60,000 转/分钟的高动态运动。\n\n MA704 支持宽泛的磁场强度和空间配置。同轴和离轴（侧轴贴装）配置均可支持。\n\n MA704 具有带阈值可编程的磁场强度检测功能，以感应磁体相对于传感器的位置，从而拓展支持更多的应用，比如感应轴向位移或用于系统诊断（如磁铁安装失效）。\n\n 单片非易失性存储器用于存储配置参数，包括基准零度角位置、ABZ 编码器设置和磁场检测阈值等。 • 10 位分辨率绝对角度编码器\n• 非接触式，长寿命\n• SPI 串行接口用于数字角度读取和芯片配置\n• 具备每圈 1-64 可编程脉冲的增量 8 位 ABZ 正交编码器接口\n• 10 位 PWM 输出精度\n• 可用于诊断检查的可编程磁场强度检测\n• 3.3V 供电，低至 12 mA 静态电流\n• -40°C 至 +125°C 工作温度\n• 采用 QFN-16（3mmx3mm）封装;

10-Bit, Digital, Contactless Angle Sensor with ABZ Incremental & PWM Outputs

文件：1.09881 Mbytes Page：27 Pages

Silicon epitaxial planar type

Silicon epitaxial planar type For switching For wave detection ■ Features • Three isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a type in the same direction) • Low forward voltage VF , optimum for low vo

Schottky Barrier Diodes (SBD)

Silicon epitaxial planar type For switching For wave detection ■ Features • Two MA3X704A (MA704A) is contained in one package • Low forward voltage VF and good wave detection efficiency η • Small temperature coefficient of forward characteristic • Small reverse current IR • Mini type 3-pin

Schottky Barrier Diodes (SBD)

Silicon epitaxial planar type For switching For wave detection ■ Features • Two MA3X704A (MA704A) is contained in one package • Low forward voltage VF and good wave detection efficiency η • Small temperature coefficient of forward characteristic • Small reverse current IR • Mini type 3-pin

丝印代码：BAN；10-Bit, Digital, Contactless Angle Sensor with ABZ Incremental & PWM Outputs

文件：1.09881 Mbytes Page：27 Pages

包装：盒 描述：10-BIT, DIGITAL, CONTACTLESS ANG 传感器，变送器 编码器

包装：盒 描述：ROTARY ENCODER INCREMENTAL 64PPR 传感器，变送器 编码器

CATV amplifier module

DESCRIPTION Hybrid amplifier module operating at a voltage supply of 24 V (DC) encapsulated in a SOT115J package. FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. APPLICATIONS • CAT

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

Silicon MOS IC

文件：30.21 Kbytes Page：2 Pages