HMIC??Silicon SP4T PIN Diode Switch RoHS Compliant

Description The MA4SW410 is a SP4T, series-shunt, broadband, PIN diode switch made with M/A-COM’s Tech’s patented HMICTM (Heterolithic Microwave Integrated Circuit) process. This process allows the silicon pedestals which form the series - shunt diodes and vias to be embedded into low loss, low d

SP4T Monolithic PIN Diode Switch

Description The MA4SW410 is a SP4T Series-Shunt Broad Band Switch made with M/A-COM’s Unique HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form Series and Shunt diodes or vias by imbedding them in a

HMIC PIN Diode

The MA4SW410 is a SP4T, series-shunt, broadband, PIN diode switch made with MACOM’s patented HMICTM (Heterolithic Microwave Integrated Circuit) process. This process allows the silicon pedestals which form the series - shunt diodes and vias to be embedded into low loss, low dispersion glass. By also ·Broad Bandwidth\n·50 nS Switching Speed\n·Up to +30 dBm C.W. Power Handling @ +25°C\n·Glass Encapsulated Chip with Polymer Protective Coating\n·Rugged Fully Monolithic\n·Usable from 50 MHz to 26.5 GHz\n·Specified from 50 MHz to 20 GHz\n·Lower Insertion Loss and Higher Isolation than Comparable pHEM;

封装/外壳：模具 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF SWITCH SP4T 20GHZ DIE RF/IF，射频/中频和 RFID 射频开关

HMIC??Silicon SP4T PIN Diode Switch

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HMIC??Silicon PIN Diode Switch with Integrated Bias Network

Description The MA4SW410B-1 device is a SP4T broadband switch with integrated bias network utilizing M/A-COM Technology Solutions HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt

HMIC??Silicon PIN Diode Switch

Description The MA4SW410B-1 device is a SP4T broadband switch with integrated bias network utilizing M/A-COM Technology Solutions HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt

HMIC PIN Diode with Bias

The MA4SW410B-1 device is a SP4T broadband switch with integrated bias network utilizing MACOM's HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in ·Broad Bandwidth\n·50 nS Switching Speed\n·Up to +30dBm C.W. Power Handling @ +25°C\n·Glass Encapsulated Chip with Polymer Protective Coating\n·Rugged Fully Monolithic\n·Lower Insertion Loss and Higher Isolation than Comparable pHEMT or Discrete Component Designs ?\n·Usable from 50 MHz to 26.5 GHz\n;

SP4T PIN Diode with Integrated Bias Network

Description The MA4SW410B-1 device is a SP4T Series-Shunt Broad Band Switch with an Integrated Bias Network utilizing M/A-COMs HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt dio

HMIC??Silicon PIN Diode Switch

Description The MA4SW410B-1 device is a SP4T broadband switch with integrated bias network utilizing M/A-COM Technology Solutions HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt

HMIC Silicon SP4T PIN Diode Switch

文件：810.87 Kbytes Page：6 Pages

HMIC Silicon PIN Diode Switch

HMIC Silicon PIN Diode Switch

文件：793.42 Kbytes Page：6 Pages

封装/外壳：模具 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF SWITCH SP4T 18GHZ DIE RF/IF，射频/中频和 RFID 射频开关

Broad Bandwidth Specified up to 18 GHz

文件：978.57 Kbytes Page：6 Pages