HMIC??Silicon PIN Diode Switches RoHS Compliant

Description The MA4SW110 (SPST), MA4SW210 (SPDT) and MA4SW310 (SP3T) are series-shunt, broadband, PIN diode switches made with MACOM’s HMICTM (Heterolithic Microwave Integrated Circuit) process. This process allows the silicon pedestals which form the series - shunt diodes and vias to be embedded

Monolithic PIN Diode Switches

Description The MA4SW110, 210 and 310 series are broad band monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as small signal, high performance switches in applications up to 26.5 Ghz. They provide performance levels superior to those realized by h

HMIC™ PIN Diode

The MA4SW110, MA4SW210 and MA4SW310 are series-shunt, broadband, PIN diode switches made with MACOM’s HMIC™ (Heterolithic Microwave Integrated Circuit) process. This process allows the silicon pedestals which form the series - shunt diodes and vias to be embedded into low loss, low dispersion glass. ·Broad Bandwidth\n·50 nS Switching Speed\n·Up to +30dBm C.W. Power Handling @ +25°C\n·Glass Encapsulated Chip with Polymer Protective Coating\n·Rugged Design Fully Monolithic\n·Lower Insertion Loss and Higher Isolation than Comparable pHEMT/Discrete Component Designs\n·Usable from 50 MHz to 26.5 GHz;

封装/外壳：模具 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF SWITCH SPDT 20GHZ DIE RF/IF，射频/中频和 RFID 射频开关

HMIC Silicon PIN Diode Switches

文件：906.7 Kbytes Page：9 Pages

Broadband Monolithic Silicon PIN Diode Switches

文件：450.11 Kbytes Page：8 Pages

Monolithic Pin Diode Switches with Integrated Bias Network

Description The MA4SW210B-1 and MA4SW310B-1 devices are SP2T and SP3T broad band switches with integrated bias networks utilizing M/A-COMs HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series a

Broad Bandwidth Specified 2 - 18 GHz

Description The MA4SW210B-1 (SP2T) and MA4SW310B-1 (SP3T) broadband switches with an integrated bias networks utilizing MACOM’s HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt di

HMIC??Silicon PIN Diode Switches with Integrated Bias Network

Description The MA4SW210B-1 (SP2T) and MA4SW310B-1 (SP3T) broadband switches with an integrated bias networks utilizing MACOM’s HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt di

HMIC PIN Diode with Bias

The MA4SW210B-1 and MA4SW310B-1 devices are SP2T and SP3T broadband switches with an integrated bias networks utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes ·Broad Bandwidth Specified 2 to 18 GHz\n·RoHS Compliant\n·Polymer Protective Coating\n·Glass Encapsulate\n·Fully Monolithic Construction\n·Low Insertion Loss / High Isolation\n·Integrated Bias Network\n·Usable up to 26 GHz;

封装/外壳：模具 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF SWITCH SPDT 18GHZ DIE RF/IF，射频/中频和 RFID 射频开关

HMIC Silicon PIN Diode Switches with Integrated Bias Network

文件：705.56 Kbytes Page：7 Pages

HMIC Silicon PIN Diode Switches with Integrated Bias Network

文件：705.56 Kbytes Page：7 Pages

HMIC??Silicon PIN Diode Switches

文件：151.64 Kbytes Page：7 Pages

HMIC Silicon PIN Diode Switches

文件：151.64 Kbytes Page：7 Pages

HMIC™ Silicon PIN Diode Switches

HMIC Silicon PIN Diode Switches

文件：151.64 Kbytes Page：7 Pages