| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MA4E2508H | SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Description The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedde | MA-COM |   | |
MA4E2508H | SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Description and Applications The MA4E2508 SurMountä Anti-Parallel Diode Series are Silicon Low, Medium & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via con | MACOM | | |
MA4E2508H | SURMOUNT™ Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Description and ● Extremely Low Parasitic Capitance and Inductance\n● Surface Mountable in Microwave Circuits, No Wirebonds Required\n● Rugged HMIC Construction with Polyimide Scratch Protection\n● Reliable, Multilayer Metalization with a Diffusion\n● Barrier, 100% Stabilization Bake (300°C, 16 hours)\n● Lower ; | MACOM | | |
MA4E2508H | SURMOUNT Low, Medium, & High Barrier Silicon 文件：224.73 Kbytes Page：5 Pages | MA-COM | | |
SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Description The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedde | MA-COM | | ||
High Barrier Anti-Parallel Si The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC™) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele ·Extremely Low Parasitic Capitance & Inductance\n·Lower Susceptibility to ESD Damage\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100 % Stabilization Bake (300°C, 16 hours)\n·Rugged HMIC™ Construction with polyimide Scratch Protection\n·Surface Mountable in Microwave Circuits, N; | MACOM | | ||
SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Description The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedde | MA-COM | | ||
SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Description and Applications The MA4E2508 SurMountä Anti-Parallel Diode Series are Silicon Low, Medium & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via con | MACOM | | ||
SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Description and Applications The MA4E2508 SurMountä Anti-Parallel Diode Series are Silicon Low, Medium & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via con | MACOM | | ||
SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Description and Applications The MA4E2508 SurMountä Anti-Parallel Diode Series are Silicon Low, Medium & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via con | MACOM | | ||
SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Description The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedde | MA-COM | |
MA4E2508H产品属性
- 类型
描述
- Vf(V)：
0.7000
- Vb：
5.00
- Total Capacitance(pF)：
0.240
- Dynamic Resistance(ohms)：
15.0
- Junction Capacitance(pF)：
0.240
- Package Category：
Surface Mount Die
- Package：
ODS-1112
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MACOM(镁可) |
26+ |
- |
16000 |
原装认证库存更多原厂可发 |
|||
M/A-COM |
2308+ |
原装正品 |
4285 |
十年专业专注 优势渠道商正品保证 |
|||
M/A-COM |
22+ |
NA |
1000 |
只做原装,价格优惠,长期供货。 |
|||
MACOM |
21+ |
标准封装 |
1452 |
专营优势订货渠道! |
|||
MA/COM |
23+ |
nul |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
M/A-COM |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
25+ |
SOT6.M |
3629 |
原装优势!房间现货!欢迎来电! |
||||
M/A-COM |
24+ |
SMD |
5500 |
M/A-COM专营品牌绝对进口原装假一赔十 |
|||
M/A-COM |
22+ |
NA |
20000 |
只做原装 品质保障 |
|||
A |
24+ |
b |
31 |
MA4E2508H规格书下载地址
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