Silicon epitaxial planar type

Silicon epitaxial planar type For switching For wave detection ■ Features • Three isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a type in the same direction) • Low forward voltage VF , optimum for low vo

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits For wave detection circuit ■ Features • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small temperature coefficient of forward characteristic • Extremely low reverse current IR

Silicon epitaxial planar type

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits For wave detection circuit ■ Features • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small temperature coefficient of forward characteristic • Extremely low reverse current IR

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT） 描述：DIODE SCHOTTKY 30V 30MA MINI3 分立半导体产品 二极管 - 整流器 - 单

Schottky Barrier Diodes (SBD)

Silicon epitaxial planar type For switching For wave detection ■ Features • Two MA3X704A (MA704A) is contained in one package • Low forward voltage VF and good wave detection efficiency η • Small temperature coefficient of forward characteristic • Small reverse current IR • Mini type 3-pin

Silicon epitaxial planar type

Silicon epitaxial planar type For switching For wave detection ■ Features • Two MA3X704A (MA704A) is contained in one package • Low forward voltage VF and good wave detection efficiency η • Small temperature coefficient of forward characteristic • Small reverse current IR • Mini type 3-pin