3.2 x 5 mm, 3.0 Volt, Clipped Sinewave, TCXO/TCVCXO

• Ultra-miniature size • Ideal for handheld and portable devices

3.2 x 5 mm, 3.0 Volt, Clipped Sinewave, TCXO/TCVCXO

文件：346.95 Kbytes Page：2 Pages

3.2 x 5 mm, 3.0 Volt, Clipped Sinewave, TCXO/TCVCXO

文件：264.87 Kbytes Page：2 Pages

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

PROGRAMMABLE UNIJUNCTION TRANSISTOR

[GESS] Programmable Unijunction Transistor

Dual Power MOSFET Drivers

General Description The MAX626/7/8 are dual monolithic power MOSFET drivers designed to translate TTL input to high voltage/current outputs. The MAX626 is a dual inverting power MOSFET driver. The MAX627 is a dual non-inverting power MOSFET driver, and the MAX628 contains one inverting section an

Silicon programmable unijunction transistor (PUTs)

[Planeta Electronic company]

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free