2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208A is a family of low voltage 2-Mbit static RAMs organized as 262,144-words by 8-bit, fabricated by Mitsubishis high performance 0.25µm CMOS technology. The M5M5V208A is suitable for memory applications where a simple interfacing , battery operating and battery backup are

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208A is a family of low voltage 2-Mbit static RAMs organized as 262,144-words by 8-bit, fabricated by Mitsubishis high performance 0.25µm CMOS technology. The M5M5V208A is suitable for memory applications where a simple interfacing , battery operating and battery backup are

2097152-BIT(262144-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M5V208AKV is low voltage 2-Mbit static RAMs organized as 262,144-words by 8-bit, fabricated by high-performance 0.25µm CMOS technology. The M5M5V208AKV is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design