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位置：首页 > IC中文资料第5470页 > M5M51016BTP

型号 功能描述 生产厂家 企业 LOGO 操作
M5M51016BTP-10L-I

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

Mitsubishi

三菱电机

M5M51016BTP-10LL-I

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

Mitsubishi

三菱电机

M5M51016BTP-10VL-I

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

Mitsubishi

三菱电机

M5M51016BTP-10VLL-I

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

Mitsubishi

三菱电机

M5M51016BTP-12VL

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

Mitsubishi

三菱电机

M5M51016BTP-12VL-I

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

Mitsubishi

三菱电机

M5M51016BTP-12VLL

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

Mitsubishi

三菱电机

M5M51016BTP-12VLL-I

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

Mitsubishi

三菱电机

M5M51016BTP-70L

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

Mitsubishi

三菱电机

M5M51016BTP-70L-I

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

Mitsubishi

三菱电机

M5M51016BTP-70LL-I

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

Mitsubishi

三菱电机

M5M51016BTP-10L-I

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

Mitsubishi

三菱电机

M5M51016BTP-12VL-I

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

Mitsubishi

三菱电机

M5M51016BTP产品属性

  • 类型

    描述

  • 型号

    M5M51016BTP

  • 制造商

    MITSUBISHI

  • 制造商全称

    Mitsubishi Electric Semiconductor

  • 功能描述

    1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

M5M51016BTP供应商更多...

更新时间：2025-10-27 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
M5M51016BTP-12VLL-I
MITSUBT
24+
NA/
4446
原装现货,当天可交货,原型号开票
询价
深圳市凌旭科技有限公司
M5M51016BTP-70LL
MITSUBISH
2016+
TSOP
8880
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市华睿芯科技有限公司
M5M51016BTP-70LL
RENESAS
24+
TSOP44
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
深圳市威雅利发展有限公司
M5M51016BTP-70LL
RENESAS
04/05+
TSOP44
11641
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市宏世佳电子科技有限公司
M5M51016BTP-12VLL-I
MITSUBIS
2025+
TSSOP44
3587
全新原厂原装产品、公司现货销售
询价
瀚佳科技(深圳)有限公司
M5M51016BTP-12VLL-I
MIT
24+
TSOP
35200
一级代理/放心采购
询价
谛辉(北京/上海/青岛 )电子科技有限公司
M5M51016BTP-12VLL-I
MIT
25+
TSOP
18000
原厂直接发货进口原装
询价
深圳市诺美思科技有限公司
M5M51016BTP-70LL
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
询价
深圳市毅创腾电子科技有限公司
M5M51016BTP-70LL
MIT
23+
TSOP
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
深圳市佳鑫美电子科技有限公司
M5M51016BTP-70LL
MITSUBISHI
25+
TSOP
2987
只售原装自家现货!诚信经营!欢迎来电!
询价

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