M5M价格

参考价格:¥78.4870

型号:M5M 品牌:Switchcraft 备注:这里有M5M多少钱,2025年最近7天走势,今日出价,今日竞价,M5M批发/采购报价,M5M行情走势销售排行榜,M5M报价。
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ETC1

2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM?

DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM?

DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM?

DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM?

DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM

2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM

2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM?

2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM

2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM?

2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM

2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM

2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM?

2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM

2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM?

2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM?

DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM?

DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM?

DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM?

DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM?

DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM?

DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29F25611isaCMOSFlashMemorywithANDtypemulti-levelmemorycells. Ithasfullyautomaticprogramminganderasecapabilitieswithasingle3.3Vpowersupply. Thefunctionsarecontrolledbysimpleexternalcommands.TofittheI/Ocardapplications,theunito

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

M5M产品属性

  • 类型

    描述

  • 型号

    M5M

  • 功能描述

    XLR 连接器 5P ADAPT RECEPTACLE

  • RoHS

  • 制造商

    Neutrik

  • 标准

    Standard XLR

  • 产品类型

    Connectors

  • 型式

    Female

  • 位置/触点数量

    3

  • 端接类型

    Solder

  • 安装风格

    Cable

  • 方向

    Vertical

更新时间:2025-7-31 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
N/A
23+
NA
20000
全新原装假一赔十
MIT
2016+
TSOP32
6528
只做进口原装现货!或订货,假一赔十!
MITSUBIS
0048+
SOJ50
2813
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MIT
24+
SOJ
35200
一级代理/放心采购
MITSUBISH
23+
NA
1394
专做原装正品,假一罚百!
MIT
06+
SOJ
1000
自己公司全新库存绝对有货
MIT
24+
2000
本站现库存
MITSUBI
23+
SOJ50
8560
受权代理!全新原装现货特价热卖!
MITSUBIS
24+
SOJ50
5000
全新原装正品,现货销售
MITSUBIS
23+
SOJ
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种

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