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型号：M5M 品牌：Switchcraft 备注：这里有M5M多少钱，2025年最近7天走势，今日出价，今日竞价，M5M批发/采购报价，M5M行情走势销售排行榜，M5M报价。

型号	功能描述	生产厂家&企业
M5M1	MEDIUM CURRENT SILICON RECTIFIERS [EDAL]	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商
M5M27C202FP-12	2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M27C202FP-15	2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M27C202J-12	2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M27C202J-15	2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M27C202JK-10	2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M27C202JK-12	2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M27C202JK-12I	2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM? 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M27C202JK-15	2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M27C202JK-15I	2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM? 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M27C202K-10	2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M27C202K-12	2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M27C202K-12I	2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM? 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M27C202K-15	2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M27C202K-15I	2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM? 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M27C202P-12	2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M27C202P-15	2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M27C202RV-12	2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M27C202RV-15	2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M27C202VP-12	2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M27C202VP-15	2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29F25611VP	MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29F25611isaCMOSFlashMemorywithANDtypemulti-levelmemorycells. Ithasfullyautomaticprogramminganderasecapabilitieswithasingle3.3Vpowersupply. Thefunctionsarecontrolledbysimpleexternalcommands.TofittheI/Ocardapplications,theunito	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29FB800FP	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29FB800FP-10	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29FB800FP-12	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29FB800RV-10	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29FB800RV-12	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29FB800VP-10	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29FB800VP-12	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29FT800FP-10	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29FT800FP-12	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29FT800RV-10	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29FT800RV-12	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29FT800VP-10	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29FT800VP-12	8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29GB160BVP	16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29GB160BVP	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29GB160BWG	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29GB160BWG	16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29GB161BVP	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29GB161BVP	16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29GB161BWG	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29GB161BWG	16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29GT160BVP	16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29GT160BVP	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29GT160BWG	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29GT160BWG	16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29GT161BVP	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29GT161BVP	16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29GT161BWG	16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29GT161BWG	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29WB160BVP	16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29WB160BVP	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29WB160BWG	16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29WB160BWG	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29WB161BVP	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29WB161BVP	16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29WB161BWG	16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29WB161BWG	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
M5M29WT160BVP	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社

M5M产品属性

类型
描述
型号
M5M
功能描述
XLR 连接器 5P ADAPT RECEPTACLE
RoHS
否
制造商
Neutrik
标准
Standard XLR
产品类型
Connectors
型式
Female
位置/触点数量
3
端接类型
Solder
安装风格
Cable
方向
Vertical

M5M供应商更多...

更新时间：2025-7-24 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	M5M27C202J-12	MITSUBISHI/三菱	24+	NA/	4012	原装现货,当天可交货,原型号开票	询价
上海意淼电子科技有限公司	M5M27C202JK	MIT	23+	PLCC44	20000	全新原装假一赔十	询价
深圳市科恒伟业电子有限公司	M5M27C202JK-12	MITSUBISH	1725+	PLCC	6528	只做原装正品现货!或订货假一赔十!	询价
深圳市益百分电子有限公司	M5M27C202JK	MIT	95+	PLCC44	188	全新原装进口自己库存优势	询价
深圳市星佑电子有限公司	M5M27C202JK-10	MIT	05+	原厂原装	4285	只做全新原装真实现货供应	询价
深圳市赛美科科技有限公司	M5M27C202JK-12I	MIT		原厂封装	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市恒达亿科技有限公司	M5M27C202J-12	MITSUBISHI	25+	PLCC	3200	全新原装、诚信经营、公司现货销售!	询价
贸泽芯城（深圳）电子科技有限公司	M5M27C202J	MIT	23+	PLCC	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市赛特兴科技有限公司	M5M27C202JK-10	MIT	QQ咨询	PLCC	106	全新原装研究所指定供货商	询价
标准国际(香港)有限公司	M5M27C202JK-10	MIT			7	公司优势库存热卖中!!	询价

M5M芯片相关品牌

M5M规格书下载地址

M5M参数引脚图相关

M5M数据表相关新闻

M5838
M5838,全新.当天发货0755-82732291当天发货或门市自取.QQ：1755232575/QQ：1157611585，微信号:87680558.
2021-4-12
M5836
M5836,全新.当天发货0755-82732291当天发货或门市自取.QQ：1755232575/QQ：1157611585，微信号:87680558.
2021-4-12
M62342HP
https://hch01.114ic.com/
2020-11-13
M61880FP
https://hch01.114ic.com/
2020-11-13
M5677-ALAA 进口原装，主营军工级IC
M5677-ALAAALI，ALTERA（阿尔特拉），ADI亚德诺，军工级IC专业优势渠道
2020-7-13
M61RB，M61SAL108B，M62216FP，M62339FP
M61RB，M61SAL108B，M62216FP，M62339FP
2020-1-7

DdatasheetPDF页码索引

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M5M价格

M5M产品属性

M5M供应商更多...

M5M芯片相关品牌

M5M规格书下载地址

M5M参数引脚图相关

M5M数据表相关新闻

M5838

M5836

M62342HP

M61880FP

M5677-ALAA 进口原装，主营军工级IC

M61RB，M61SAL108B，M62216FP，M62339FP

DdatasheetPDF页码索引