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M5M价格
参考价格：￥78.4870
型号：M5M 品牌：Switchcraft 备注：这里有M5M多少钱，2025年最近7天走势，今日出价，今日竞价，M5M批发/采购报价，M5M行情走势销售排行榜，M5M报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MEDIUM CURRENT SILICON RECTIFIERS [EDAL] | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  |   | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 |  | | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM? 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM? 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM? 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM? 2097152-BIT(131072-WORDBY16-BIT)CMOSERASABLEANDELECTRICALLYREPROGRAMMABLEROM | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM? DESCRIPTION TheMitsubishiM5M27C202P,FP,J,VP,RVarehigh-speed2097152-bitonetimeprogrammablereadonlymemories.Theyaresuitableformicroprocessorprogrammingapplicationswhererapidturn-aroundisrequired.TheM5M27C202P,FP,J,VP,RVarefabricatedbyN-channeldoublepolysilicon | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29F25611isaCMOSFlashMemorywithANDtypemulti-levelmemorycells. Ithasfullyautomaticprogramminganderasecapabilitieswithasingle3.3Vpowersupply. Thefunctionsarecontrolledbysimpleexternalcommands.TofittheI/Ocardapplications,theunito | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIM5M29FB/T800FP,VP,RVare3.3V-onlyhighspeed8,388,608-bitCMOSbootblockFlashMemoriessuitableformobileandpersonalcomputing,andcommunicationproducts.TheM5M29FB/T800FP,VP,RVarefabricatedbyCMOStechnologyfortheperipheralcircuitsandDINOR(Divide | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION TheMITSUBISHIMobileFLASHM5M29GB/T161BWGare3.3V-onlyhighspeed16,777,216-bitCMOSbootblockFlashMemorieswithalternatingBGO(BackGroundOperation)feature.TheBGOfeatureofthedeviceallowsProgramorEraseoperationstobeperformedinonebankwhilethedevicesimult | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | |
M5M产品属性
- 类型
描述
- 型号
M5M
- 功能描述
XLR 连接器 5P ADAPT RECEPTACLE
- RoHS
否
- 制造商
Neutrik
- 标准
Standard XLR
- 产品类型
Connectors
- 型式
Female
- 位置/触点数量
3
- 端接类型
Solder
- 安装风格
Cable
- 方向
Vertical
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITSUBISHI/三菱 |
24+ |
NA/ |
4012 |
原装现货,当天可交货,原型号开票 |
|||
MIT |
23+ |
PLCC44 |
20000 |
全新原装假一赔十 |
|||
MITSUBISH |
1725+ |
PLCC |
6528 |
只做原装正品现货!或订货假一赔十! |
|||
MIT |
7 |
公司优势库存 热卖中!! |
|||||
MT |
1824+ |
PLCC |
5000 |
原装现货专业代理,可以代拷程序 |
|||
MITSUBISHI |
25+ |
PLCC |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
MIT |
QQ咨询 |
PLCC |
106 |
全新原装 研究所指定供货商 |
|||
MIT |
23+ |
PLCC |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
三凌 |
2020+ |
SOJ |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
MIT |
95+ |
PLCC44 |
188 |
全新原装进口自己库存优势 |
M5M芯片相关品牌
M5M规格书下载地址
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M5M数据表相关新闻
M5838
M5838,全新.当天发货0755-82732291当天发货或门市自取.QQ：1755232575/QQ：1157611585，微信号:87680558.
2021-4-12M5836
M5836,全新.当天发货0755-82732291当天发货或门市自取.QQ：1755232575/QQ：1157611585，微信号:87680558.
2021-4-12M62342HP
https://hch01.114ic.com/
2020-11-13M61880FP
https://hch01.114ic.com/
2020-11-13M5677-ALAA 进口原装，主营军工级IC
M5677-ALAAALI，ALTERA（阿尔特拉），ADI亚德诺，军工级IC专业优势渠道
2020-7-13M61RB，M61SAL108B，M62216FP，M62339FP
M61RB，M61SAL108B，M62216FP，M62339FP
2020-1-7
DdatasheetPDF页码索引
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