128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR128E is a 128 Mbit (8Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt

128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR128E is a 128 Mbit (8Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt

128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR128E is a 128 Mbit (8Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt

128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR128E is a 128 Mbit (8Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt

128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58WR128E is a 128 Mbit (8Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt