型号 功能描述 生产厂家 企业 LOGO 操作
M58CR032C

32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58CR032 is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti

STMICROELECTRONICS

意法半导体

M58CR032C

32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

STMICROELECTRONICS

意法半导体

M58CR032C

32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory

文件:435.62 Kbytes Page:63 Pages

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58CR032 is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58CR032 is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58CR032 is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58CR032 is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory

文件:435.62 Kbytes Page:63 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory

文件:435.62 Kbytes Page:63 Pages

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory

文件:435.62 Kbytes Page:63 Pages

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58CR032 is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti

STMICROELECTRONICS

意法半导体

32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory

文件:435.62 Kbytes Page:63 Pages

STMICROELECTRONICS

意法半导体

M58CR032C产品属性

  • 类型

    描述

  • 型号

    M58CR032C

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

更新时间:2025-12-28 10:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
18+
BGA
12500
全新原装正品,本司专业配单,大单小单都配
ST
BGA
2500
正品原装--自家现货-实单可谈
24+
3000
公司存货
ST/意法
24+
BGA
3000
全新原装现货 优势库存
ST
25+
BGA
4418
只做原装进口!正品支持实单!
ST/意法
23+
BGA
50000
全新原装正品现货,支持订货
ST
24+
BGA
35210
一级代理/放心采购
ST
BGA
5350
一级代理 原装正品假一罚十价格优势长期供货
ST/意法
23+
BGA
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST
24+
BGA
30617
ST一级地代理商原装进口现货

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