位置：首页 > IC中文资料第109页 > M58BW016DB8T3TNS
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | NUMONYX |   | ||
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Description The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the inp | NUMONYX | |
M58BW016DB8T3TNS产品属性
- 类型
描述
- 型号
M58BW016DB8T3TNS
- 制造商
Micron Technology Inc
- 功能描述
AUTOMOTIVE - Tape and Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITSUBISHI/三菱 |
23+ |
MODULE |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
TELCOM |
SOP8 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
25+ |
DIP |
2700 |
全新原装自家现货优势! |
||||
N/A |
2450+ |
QFN16 |
6540 |
只做原厂原装正品终端客户免费申请样品 |
|||
N/A |
25+ |
QFN |
15000 |
一级代理原装现货 |
|||
NEOWAY |
24+ |
GPRS |
65200 |
一级代理/放心采购 |
|||
MIT |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
MITSUBISHI |
26+ |
DIP |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
MICROCHIP/微芯 |
24+ |
14SOIC |
7671 |
原装正品.优势专营 |
|||
MOBIM |
08+ |
QFN |
5897 |
全新 发货1-2天 |
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M58BW016DB8T3TNS规格书下载地址
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DdatasheetPDF页码索引
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