| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M54HC30 | 8 INPUT NAND GATE DESCRIPTION The M54/74HC30 is a high speed CMOS 8-INPUT NAND GATE fabricated with silicon gate C2MOS technology. ■ HIGH SPEED tPD = 12 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VNIL = 28 VCC (MIN.) ■ OUTPUT DRIVE CAPABILITY 10 | STMICROELECTRONICS 意法半导体 |   | |
M54HC30 | 抗辐照8输入与非门 The M54HCxxx and M54HCTxxx series is composed of CMOS functions, specifically designed to meet the radiation requirements of the aerospace industry. They include a large set of gates, flip-flops, multiplexers, counters, bus interface and several other functions. The radiation hardness, the single ev • ESCC qualified \n• 7 V Absolute maximum ratings \n• 2 V to 6 V operating voltage for CMOS M54HCxxx series \n• 4.5 V to 5.5 V operating voltage for TTL M54HCTxxx series \n• Hermetic packages \n• Rad-hard 50 krad (Si) TID \n• SEL immune up to 110 MeV.cm²/mg \n• -55 °C to +125 °C temperature range \n; | STMICROELECTRONICS 意法半导体 | | |
M54HC30 | Rad-hard high speed 2 to 6 V CMOS logic series 文件：306.74 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | | |
M54HC30 | RAD-HARD 8-INPUT NAND GATE 文件：115.48 Kbytes Page：8 Pages | STMICROELECTRONICS 意法半导体 | | |
8 INPUT NAND GATE DESCRIPTION The M54/74HC30 is a high speed CMOS 8-INPUT NAND GATE fabricated with silicon gate C2MOS technology. ■ HIGH SPEED tPD = 12 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VNIL = 28 VCC (MIN.) ■ OUTPUT DRIVE CAPABILITY 10 | STMICROELECTRONICS 意法半导体 | | ||
RAD-HARD 8-INPUT NAND GATE 文件：115.48 Kbytes Page：8 Pages | STMICROELECTRONICS 意法半导体 | | ||
RAD-HARD 8-INPUT NAND GATE 文件：115.48 Kbytes Page：8 Pages | STMICROELECTRONICS 意法半导体 | | ||
Rad-hard high speed 2 to 6 V CMOS logic series 文件：306.74 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | | ||
RAD-HARD 8-INPUT NAND GATE 文件：115.48 Kbytes Page：8 Pages | STMICROELECTRONICS 意法半导体 | | ||
RAD-HARD 8-INPUT NAND GATE 文件：115.48 Kbytes Page：8 Pages | STMICROELECTRONICS 意法半导体 | | ||
Rad-hard high speed 2 to 6 V CMOS logic series 文件：306.74 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | | ||
RAD-HARD 8-INPUT NAND GATE 文件：115.48 Kbytes Page：8 Pages | STMICROELECTRONICS 意法半导体 | | ||
High Speed CMOS Logic 8-Input NAND Gate 文件：349.75 Kbytes Page：13 Pages | TI 德州仪器 | | ||
High Speed CMOS Logic 8-Input NAND Gate 文件：349.75 Kbytes Page：13 Pages | TI 德州仪器 | | ||
8-Input NAND Gate 文件：100.27 Kbytes Page：4 Pages | NSC 国半 | | ||
8-Input NAND Gate 文件：100.27 Kbytes Page：4 Pages | NSC 国半 | |
M54HC30产品属性
- 类型
描述
- Radiation Level：
50 krad (Si)
- Agency Qualification：
ESCC
- Agency Generic Spec：
9201/110
- Hi-Rel Package：
DIL-14
- Supply Voltage_min(V)：
2
- Supply Voltage_max(V)：
6
- Vi Range：
0 to VCC
- Temperature range：
-55 to 125 C
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
CLCC20 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
M54HC30规格书下载地址
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