RAD-HARD OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (NON INVERTED)

DESCRIPTION The M54/74HC240, HC241 and HC244 are high speed CMOS OCTAL BUS BUFFERs fabricated in silicon gate C2MOS technology. ■ HIGH SPEED tPD = 10 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) at TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VINL = 28 VCC (MIN.) ■ OUTPUT DRI

HC240: INVERTED - HC241/244 NON INVERTED OCTAL BUS BUFFER WITH 3 STATE OUTPUTS

DESCRIPTION The M54/74HC240, HC241 and HC244 are high speed CMOS OCTAL BUS BUFFERs fabricated in silicon gate C2MOS technology. ■ HIGH SPEED tPD = 10 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) at TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VINL = 28 VCC (MIN.) ■ OUTPUT DRI

抗辐照八路总线3态缓冲器

The M54HCxxx and M54HCTxxx series is composed of CMOS functions, specifically designed to meet the radiation requirements of the aerospace industry. They include a large set of gates, flip-flops, multiplexers, counters, bus interface and several other functions. The radiation hardness, the single ev • ESCC qualified \n• 7 V Absolute maximum ratings \n• 2 V to 6 V operating voltage for CMOS M54HCxxx series \n• 4.5 V to 5.5 V operating voltage for TTL M54HCTxxx series \n• Hermetic packages \n• Rad-hard 50 krad (Si) TID \n• SEL immune up to 110 MeV.cm²/mg \n• -55 °C to +125 °C temperature range \n;

Rad-hard high speed 2 to 6 V CMOS logic series

文件：306.74 Kbytes Page：29 Pages

HC240: INVERTED - HC241/244 NON INVERTED OCTAL BUS BUFFER WITH 3 STATE OUTPUTS

DESCRIPTION The M54/74HC240, HC241 and HC244 are high speed CMOS OCTAL BUS BUFFERs fabricated in silicon gate C2MOS technology. ■ HIGH SPEED tPD = 10 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) at TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VINL = 28 VCC (MIN.) ■ OUTPUT DRI

HC240: INVERTED - HC241/244 NON INVERTED OCTAL BUS BUFFER WITH 3 STATE OUTPUTS

DESCRIPTION The M54/74HC240, HC241 and HC244 are high speed CMOS OCTAL BUS BUFFERs fabricated in silicon gate C2MOS technology. ■ HIGH SPEED tPD = 10 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) at TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VINL = 28 VCC (MIN.) ■ OUTPUT DRI

RAD-HARD OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (NON INVERTED)

DESCRIPTION The M54/74HC240, HC241 and HC244 are high speed CMOS OCTAL BUS BUFFERs fabricated in silicon gate C2MOS technology. ■ HIGH SPEED tPD = 10 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) at TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VINL = 28 VCC (MIN.) ■ OUTPUT DRI

RAD-HARD OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (NON INVERTED)

DESCRIPTION The M54/74HC240, HC241 and HC244 are high speed CMOS OCTAL BUS BUFFERs fabricated in silicon gate C2MOS technology. ■ HIGH SPEED tPD = 10 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) at TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VINL = 28 VCC (MIN.) ■ OUTPUT DRI

HC240: INVERTED - HC241/244 NON INVERTED OCTAL BUS BUFFER WITH 3 STATE OUTPUTS

DESCRIPTION The M54/74HC240, HC241 and HC244 are high speed CMOS OCTAL BUS BUFFERs fabricated in silicon gate C2MOS technology. ■ HIGH SPEED tPD = 10 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) at TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VINL = 28 VCC (MIN.) ■ OUTPUT DRI

RAD-HARD OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (NON INVERTED)

DESCRIPTION The M54/74HC240, HC241 and HC244 are high speed CMOS OCTAL BUS BUFFERs fabricated in silicon gate C2MOS technology. ■ HIGH SPEED tPD = 10 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) at TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VINL = 28 VCC (MIN.) ■ OUTPUT DRI

RAD-HARD OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (NON INVERTED)

DESCRIPTION The M54/74HC240, HC241 and HC244 are high speed CMOS OCTAL BUS BUFFERs fabricated in silicon gate C2MOS technology. ■ HIGH SPEED tPD = 10 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) at TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VINL = 28 VCC (MIN.) ■ OUTPUT DRI

HC240: INVERTED - HC241/244 NON INVERTED OCTAL BUS BUFFER WITH 3 STATE OUTPUTS

DESCRIPTION The M54/74HC240, HC241 and HC244 are high speed CMOS OCTAL BUS BUFFERs fabricated in silicon gate C2MOS technology. ■ HIGH SPEED tPD = 10 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) at TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VINL = 28 VCC (MIN.) ■ OUTPUT DRI

Rad-hard high speed 2 to 6 V CMOS logic series

文件：306.74 Kbytes Page：29 Pages

Rad-hard high speed 2 to 6 V CMOS logic series

文件：306.74 Kbytes Page：29 Pages

Octal 3-State Noninverting Buffer/Line Driver/Line Receiver

文件：185.67 Kbytes Page：8 Pages

Octal 3-State Noninverting Buffer/Line Driver/Line Receiver

文件：185.67 Kbytes Page：8 Pages

OCTAL BUFFERS AND LINE DRIVERS WITH 3-STATE OUTPUTS

文件：534.46 Kbytes Page：16 Pages

OCTAL BUFFERS AND LINE DRIVERS WITH 3-STATE OUTPUTS

文件：534.46 Kbytes Page：16 Pages