QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

抗辐照四路总线3态缓冲器

The M54HCxxx and M54HCTxxx series is composed of CMOS functions, specifically designed to meet the radiation requirements of the aerospace industry. They include a large set of gates, flip-flops, multiplexers, counters, bus interface and several other functions. The radiation hardness, the single ev • ESCC qualified \n• 7 V Absolute maximum ratings \n• 2 V to 6 V operating voltage for CMOS M54HCxxx series \n• 4.5 V to 5.5 V operating voltage for TTL M54HCTxxx series \n• Hermetic packages \n• Rad-hard 50 krad (Si) TID \n• SEL immune up to 110 MeV.cm²/mg \n• -55 °C to +125 °C temperature range \n;

Rad-hard high speed 2 to 6 V CMOS logic series

文件：306.74 Kbytes Page：29 Pages

RAD-HARD QUAD BUS BUFFER (3-STATE)

文件：117.84 Kbytes Page：9 Pages

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

RAD-HARD QUAD BUS BUFFER (3-STATE)

文件：117.84 Kbytes Page：9 Pages

RAD-HARD QUAD BUS BUFFER (3-STATE)

文件：117.84 Kbytes Page：9 Pages

RAD-HARD QUAD BUS BUFFER (3-STATE)

文件：117.84 Kbytes Page：9 Pages

Rad-hard high speed 2 to 6 V CMOS logic series

文件：306.74 Kbytes Page：29 Pages

RAD-HARD QUAD BUS BUFFER (3-STATE)

文件：117.84 Kbytes Page：9 Pages

QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS

文件：93.61 Kbytes Page：6 Pages

QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS

文件：93.61 Kbytes Page：6 Pages

QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS

文件：93.61 Kbytes Page：6 Pages

QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS

文件：93.61 Kbytes Page：6 Pages