8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

DESCRIPTION M54585KP is eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES ● High breakdown voltage (BVCEO ≥ 50V) ●

晶体管阵列

·晶体管阵列是通过微小电流对大电流进行控制的半导体集成电路。众多的产品系列(50mA~1.5A/35V~50V)广泛应用于各种领域。同时由于采用表面封装技术，使产品的小型化、轻量化和高密度化变为可能。;

8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

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8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES High breakdown voltag

8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES High breakdown voltag

8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES High breakdown voltag