8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION M54563FP is an eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high current driving with extremely low input-current supply. FEATURES ● High breakdown voltage (BVCEO ≥ 50V) ●

8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE

DESCRIPTION M54563FP is an eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high current driving with extremely low input-current supply. FEATURES ● High breakdown voltage (BVCEO ≥ 50V) ●

晶体管阵列

·晶体管阵列是通过微小电流对大电流进行控制的半导体集成电路。众多的产品系列(50mA~1.5A/35V~50V)广泛应用于各种领域。同时由于采用表面封装技术，使产品的小型化、轻量化和高密度化变为可能。;

8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

文件：103.3 Kbytes Page：4 Pages

8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION M54563FP is an eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high current driving with extremely low input-current supply. FEATURES ● High breakdown voltage (BVCEO ≥ 50V) ●

8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

文件：210.32 Kbytes Page：5 Pages

3.4 GHz Broadband Silicon RFIC Amplifier

文件：107.78 Kbytes Page：11 Pages

3.4 GHz Broadband Silicon RFIC Amplifier

文件：107.78 Kbytes Page：11 Pages