位置：首页 > IC中文资料第5832页 > M470T6554CZ0
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M470T6554CZ0 | DDR2UnbufferedSODIMM Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd | SamsungSamsung Group 三星三星半导体 |  |   |
DDR2UnbufferedSODIMM Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd | SamsungSamsung Group 三星三星半导体 | | | |
DDR2UnbufferedSODIMM200pinUnbufferedSODIMMbasedon512MbC-die64bitNon-ECC Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd | SamsungSamsung Group 三星三星半导体 | | | |
DDR2UnbufferedSODIMM200pinUnbufferedSODIMMbasedon512MbC-die64bitNon-ECC Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd | SamsungSamsung Group 三星三星半导体 | | | |
DDR2UnbufferedSODIMM Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd | SamsungSamsung Group 三星三星半导体 | | | |
DDR2UnbufferedSODIMM200pinUnbufferedSODIMMbasedon512MbC-die64bitNon-ECC Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd | SamsungSamsung Group 三星三星半导体 | | | |
DDR2UnbufferedSODIMM200pinUnbufferedSODIMMbasedon512MbC-die64bitNon-ECC Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd | SamsungSamsung Group 三星三星半导体 | | | |
DDR2UnbufferedSODIMM200pinUnbufferedSODIMMbasedon512MbC-die64bitNon-ECC Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd | SamsungSamsung Group 三星三星半导体 | | | |
DDR2UnbufferedSODIMM200pinUnbufferedSODIMMbasedon512MbC-die64bitNon-ECC Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd | SamsungSamsung Group 三星三星半导体 | | | |
DDR2UnbufferedSODIMM200pinUnbufferedSODIMMbasedon512MbC-die64bitNon-ECC Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd | SamsungSamsung Group 三星三星半导体 | | | |
DDR2UnbufferedSODIMM200pinUnbufferedSODIMMbasedon512MbC-die64bitNon-ECC Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd | SamsungSamsung Group 三星三星半导体 | | | |
DDR2UnbufferedSODIMM Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd | SamsungSamsung Group 三星三星半导体 | | | |
DDR2UnbufferedSODIMM Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd | SamsungSamsung Group 三星三星半导体 | | |
M470T6554CZ0产品属性
- 类型
描述
- 型号
M470T6554CZ0
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
DDR2 Unbuffered SODIMM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SMART |
三年内 |
1983 |
纳立只做原装正品13590203865 |
||||
MICRON |
1844+ |
BGA |
6528 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Samsung |
21+ |
标准封装 |
5000 |
进口原装,订货渠道! |
|||
SAM |
23+ |
NA |
126 |
专做原装正品,假一罚百! |
|||
SAMSUNG |
22+ |
252 |
原装现货,假一罚十 |
||||
SAMSUNG(三星) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
MREL/麦瑞 |
23+ |
NA/ |
6184 |
原装现货,当天可交货,原型号开票 |
|||
SAMSUNG(三星半导体) |
23+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
SAMSUNG/三星 |
BGA |
265209 |
假一罚十原包原标签常备现货! |
||||
SAMSUNG/三星 |
22+ |
23509 |
郑重承诺只做原装进口货 |
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M470T6554CZ0规格书下载地址
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DdatasheetPDF页码索引
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